BUL1203E

® BUL1203E HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED s APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING (277 V HALF BRIDGE AND 120 V PUSH-PULL TOPOLOGIES) TO-220 3 1 2 DESCRIPTION The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight h FE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-BaseVoltage (I E = 0 ) Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < 5 m s) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 1200 1200 550 9 5 8 2 4 100 -65 to 150 150 Unit V V V V A A A A W o o C C 1/7 December 2003 BUL1203E THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.25 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0 ) Test Conditions V CE = 1 200 V V CE = 5 50 V I C = 1 00 mA L = 25 mH 550 Min. Typ. Max. 100 100 Unit µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V EBO V CE(sat) ∗ Emitter-Base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I E = 1 0 mA IC = 1 A IC = 2 A IC = 3 A IC = 2 A IC = 3 A IC IC IC IC = = = = 1 mA 1 0 mA 0 .8 A 2A I B = 0 .2 A I B = 0 .4 A IB = 1 A I B = 0 .4 A IB = 1 A V CE = 5 V V CE = 5 V V CE = 3 V V CE = 5 V I B1 = 0 .4 A tp = 30 µ s (see figure 2) C = 1.8 nF V BE = - 5 V 9 0.5 0.7 1.5 1.5 1.5 10 10 14 9 V V V V V V V BE(sat) ∗ h FE ∗ 32 28 0.5 3.0 0.3 µs µs µs mJ t on ts tf E ar RESISTIVE LOAD Turn-on Time Storage Time Fall Time Repetitive Avalanche Energy IC = 2 A I B2 = - 0.8 A V CC = 1 50 V L = 2 mH V CC = 5 0 V (see figure 3) 2.5 0.2 6 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curve 2/7 BUL1203E DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Inductive Load Storage Time Inductive Load Fall Time 3/7 BUL1203E Reverse Biased Safe Operating Area Figure 1: Inductive Load Switching Test Circuit Figure 2: Resistive Load Switching Test Circuit 4/7 BUL1203E Figure 3: Energy Rating Test Circuit 5/7 BUL1203E TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 6/7 BUL1203E Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7