BUL128D-B_05

BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n n n n n n n STMicroelectronics PREFERRED SALES TYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE Figure 1: Package 3 APPLICATIONS n ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING n FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1: Order Codes Part Number BUL128D-B Marking BUL128D-B TO-220 1 2 Figure 2: Internal Schematic Diagram Package TO-220 Packaging Tube Table 2: Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC= 0, IB = 2 A, tp < 10 µs, TJ = 150 oC) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Value 700 400 V(BR)EBO 4 8 2 4 Rev. 2 Unit V V V A A A A 1/8 February 2005 BUL128D-B Symbol Ptot Tstg TJ Storage Temperature Max. Operating Junction Temperature Parameter Total Dissipation at TC = 25 C o Value 70 -65 to 150 150 Unit W °C °C Table 3: Thermal Data Rthj-case Rthj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES ICEO V(BR)EBO Parameter Collector Cut-off Current VCE = 700 V (VBE = 0 V) (IB = 0) Emitter-Base Breakdown Voltage (IC = 0 ) VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) VCE(sat)* Collector-Emitter Saturation Voltage IC = 0.5 A IC = 1 A IC = 2.5 A IC = 4 A VBE(sat)* Base-Emitter Saturation IC = 0.5 A Voltage IC = 1 A IC = 2.5 A hFE* DC Current Gain RESISTIVE LOAD ts tf Storage Time Fall Time INDUCTIVE LOAD ts tf Storage Time Fall Time IC = 10 mA IC = 2 A VCC =200 V IB1 = 0.4 A RBB = 0 W (see figure 15) VCC =250 V IB1 = 0.4 A Tp = 30 µs IB = 0.1 A IB = 0.2 A IB = 0.5 A IB = 1 A IB = 0.1 A IB = 0.2 A IB = 0.5 A VCE = 5 V VCE = 5 V IC = 2 A VBE(off) = -5 V L = 200 µH IC = 2 A IB2 = -0.4 A (see figure 14) 2 0.2 2.9 µs µs 0.6 0.1 µs µs 10 12 32 0.5 1.1 1.2 1.3 0.7 1 1.5 V V V V V V V IC = 100 mA L = 25 mH 400 V IE = 10 mA 9 18 V VCE =700 V Tj = 125 oC Test Conditions Min. Typ. Max. 100 500 250 Unit µA µA µA Collector Cut-off Current VCE = 400 V * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. . 2/8 BUL128D-B Figure 3: Safe Operating Area Figure 6: Derating Current Figure 4: DC Current Gain Figure 7: DC Current Gain Figure 5: Collector-Emitter Saturation Voltage Figure 8: Base-Emitter Saturation Voltage 3/8 BUL128D-B Figure 9: Inductive Load Fall Time Figure 12: Inductive Load Stoarage Time Figure 10: Resistive Load Fall Time Figure 13: Resistive Load Stoarage Time Figure 11: Reverse Biased Operating Area 4/8 BUL128D-B Figure 14: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Table 15: Restistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 5/8 BUL128D-B TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 6/8 BUL128D-B Table 5: Version 01-Oct-2002 15-Feb-2005 Release Date 1 1 First Release. Added table 1 on page 1. Change Designator 7/8 BUL128D-B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8