BUL312FH

BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL312FH „ „ „ „ „ „ „ Marking BUL312FH Shipment Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 °C LARGE R.B.S.O.A. FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HORIZONTAL DEFLECTION FOR COLOR TV SWITCH MODE POWER SUPPLIES ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220FH APPLICATIONS: „ „ „ INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide R.B.S.O.A. ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Visol Tstg Tj August 2002 Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 °C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1150 500 9 5 10 3 4 36 2500 –65 to 150 150 Unit V V V A A A A W V °C °C 1/6 BUL312FH THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.47 62.5 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified) Symbol ICES ICEO VEBO VCEO(sus)* Parameter Collector Cut-off Current (VBE = 0) Collector Cut-off Current (IB = 0) Emitter-Base Voltage (IC = 0) Collector-Emitter Sustaining Voltage (IB = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time VCE = 1150 V VCE = 1150 V VCE = 500 V IE = 10 mA IC = 100 mA 9 500 Test Conditions Tj = 125 °C Min. Typ. Max. 1 2 250 Unit mA mA µA V V VCE(sat)* IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A IC = 3 A IC = 10 mA IC = 3 A IC = 2 A IB1 = 400 mA L = 200 µH (See Figure 1) IC = 2 A IB1 = 400 mA L = 200 µH Tj = 125 °C IB = 200 mA IB = 400 mA IB = 600 mA IB = 200 mA IB = 400 mA IB = 600 mA VCE = 5 V VCE = 2.5 V Vclamp = 250 V VBE(off) = -5 V RBB = 0 Vclamp = 250 V VBE(off) = -5 V RBB = 0 (See Figure 1) 8 8 1.2 80 0.5 0.7 1.1 1 1.1 1.2 16 1.9 160 V V V V V V VBE(sat)* hFE* ts tf µs ns ts tf 1.8 150 µs ns * Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %. 2/6 BUL312FH Safe Operating Area Derating Curve Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain DC Current Gain 3/6 BUL312FH Inductive Load Storage Time Inductive Load Fall Time Reverse Biased Safe Operating Area Figure 1: Inductive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor 3) Fast Recovery Rectifier 4/6 BUL312FH TO-220FH (Fully plastic High voltage) MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 L8 L9 15.9 9 14.5 2.4 28.6 9.8 3.4 16.4 9.3 15 0.626 0.354 0.570 0.094 4.4 2.5 2.5 0.45 0.75 1.3 1.3 4.95 2.4 10 16 30.6 10.6 1.126 0.385 0.134 0.645 0.366 0.590 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.8 1.8 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.051 0.051 0.195 0.094 0.393 0.630 1.204 0.417 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409 P011W 5/6 BUL312FH Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 6/6