BULK128D

BULK128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s SGS-THOMSON PREFERRED SALESTYPE ORDERING CODES : BULK128D-A AND BULK128D-B NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 1 2 3 APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. SOT-82 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 4 8 2 4 55 -65 to 150 150 Uni t V V V A A A A W o o C C December 1997 1/7 BULK128D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.27 80 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO Parameter Collector Cut-off Current (V BE = -1.5 V) Collector-Emitter Leakage Current (I B = 0) Emitter-Base Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain Forward Voltage Drop RESISTIVE LO AD Storage Time BULK128D-A BULK128D-B Fall T ime INDUCTIVE LOAD Storage Time F all Time Test Cond ition s V CE = 700 V V CE = 700 V V CE = 400 V Tj = 125 o C Min. Typ . Max. 100 500 250 Un it µA µA µA V EBO V CEO(sus) V CE(sat )∗ I E = 10 mA I C = 100 mA I C = 0.5 A IC = 1 A I C = 2.5 A I C = 0.5 A IC = 1 A I C = 2.5 A I C = 10 mA IC = 2 A If = 2 A V CC = 250 V I B1 = 0.4 A T p = 30 µ s (see fig. 2) V Cl = 200 V I B1 = 0.4 A R BB = 0 Ω (see fig. 1) IC = 2 A I B2 = -0.4 A L = 25 mH IB = 0.1 A IB = 0.2 A IB = 0.5 A IB = 0.1 A IB = 0.2 A IB = 0.5 A V CE = 5 V VCE = 5 V 9 400 0.7 1.0 1.5 1.1 1.2 1.3 10 8 2.5 V V V V V V V V V BE(s at)∗ h FE∗ Vf ts V 1.7 2.0 0.2 IC = 2 A V BE(off ) = -5 V L = 200 µ H 0.6 0.1 2.5 2.9 tf ts tf µs µs µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Note: Ordering codes: - BULK128D-A - BULK128D-B. Please contact your nearest ST Microelectronics sales office for delivery details. 2/7 BULK128D Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BULK128D Inductive Fall Time Inductive Storage Time Resistive Load Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BULK128D Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BULK128D SOT-82 MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F H H2 2.15 4.15 3.8 2.54 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.100 0.084 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16 MIN. 0.291 0.413 0.028 0.019 0.04 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.444 0.035 0.030 0.106 0.05 0.629 DIM. C A F H e e3 6/7 H2 c1 b b1 D B P032A BULK128D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 7/7