BULT118M

BULT118 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ) s ( t Applications c u d o ) r s ( P t c e t Description u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O ■ Very high switching speed ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low power converters The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. 3 2 1 SOT-32 Figure 1. Internal schematic diagram It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1. Device summary Order code Marking Package Packaging BULT118 BULT118 SOT-32 Tube July 2008 Rev 2 1/10 www.st.com 10 Electrical ratings 1 BULT118 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0) 9 V Collector current 2 A Collector peak current (tP < 5 ms) 4 A Base current 1 A IBM Base peak current (tP < 5 ms) 2 A Ptot Total dissipation at Tc = 25 °C 45 W Tstg Storage temperature -65 to 150 °C 150 °C IC ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O ICM IB TJ 2/10 Max. operating junction temperature BULT118 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test conditions Min. Typ. VCE = 700 V Max. Unit 100 500 µA µA 250 µA ICES Collector cut-off current (VBE =0) ICEO Collector-emitter leakage VCE = 400 V current VEBO Emitter-base voltage IE = 10 mA 9 V Collector-emitter sustaining voltage (IB = 0) IC = 10 mA 400 V VCE = 700 V TC = 125 °C ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O VCEO(sus) VCE(sat) VBE(sat) hFE (1) (1) (1) (1) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain IC = 0.5 A IB = 0.1 A IC = 1 A _ IB = 0.2 A IC = 2 A _ IB = 0.4 A IC = 0.5 A IB = 0.1 A IC = 1 A _ IB = 0.2 A IC = 2 A _ IB = 0.4 A IC = 10 mA _ VCE = 5 V 10 IC = 0.5 A _ VCE = 5 V 10 _ _ VCE = 5 V 8 IC = 2 A 0.5 1 1.5 V V V 1 1.2 1.3 V V V 50 Resistive load tr Rise time IC = 1 A ts Storage time IB1 =-IB2 = 0.2 A tf Fall time VCC= 125 V Inductive load IC = 1 A IB1 = 0.2 A ts Storage time VBE(off) = -5 V L= 50 mH tf Fall time VClamp = 300 V 0.4 0.7 µs 3.2 4.5 µs 0.25 0.4 µs 0.8 µs 0.16 µs 1. Pulsed duration = 300 µs, duty cycle ≤1.5 % 3/10 Electrical characteristics 2.1 BULT118 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 4/10 Figure 4. DC current gain Figure 5. DC current gain Figure 6. Collector-emitter saturation voltage Figure 7. Base-emitter saturation voltage BULT118 Electrical characteristics Figure 8. Inductive load fall time Figure 9. Inductive load storage time ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Figure 10. Resistive load fall time Figure 11. Resistive load storage time Figure 12. Reverse biased SOA 5/10 Electrical characteristics 2.2 BULT118 Test circuits Figure 13. Resistive load switching test circuit ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 1) Fast electronic switch 2) Non-inductive resistor Figure 14. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 6/10 BULT118 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 7/10 Package mechanical data BULT118 SOT-32 (TO-126) MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 2.4 2.9 B 0.64 0.88 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O B1 0.39 0.63 D 10.5 11.05 E 7.4 7.8 e 2.04 2.29 2.54 e1 4.07 4.58 5.08 L 15.3 P 2.9 Q Q1 16 3.2 3.8 1 1.52 H2 2.15 I 1.27 0016114E 8/10 BULT118 4 Revision history Revision history Table 4. Document revision history Date Revision Changes 29-Sep-2003 1 Initial release. 10-Jul-2008 2 Updated: VCEO(sus) condition in Table 3 on page 3, SOT-32 mechanical data, cover page ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 9/10 BULT118 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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