BYT231PIV-400

® BYT230PIV-400 BYT231PIV-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) trr (max) FEATURES AND BENEFITS n K2 A2 A2 K1 2 x 30 A 400 V 1.4 V 50 ns K1 A1 K2 A1 BYT231PIV-400 BYT230PIV-400 n n n VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance = 45 pF Inductance < 5 nH ISOTOPTM (Plastic) DESCRIPTION These rectifier devices are suited for free-wheeling function in converters and motor control circuits. Packaged in ISOTOP, they are intended for use in Switch Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IFRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Repetitive peak forward current RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 75°C δ = 0.5 tp = 10 ms Sinusoidal tp=5 µs F=1kHz Value 400 900 50 30 350 - 40 to + 150 150 Unit V A A A A °C °C TM: ISOTOP is a registered trademark of STMicroelectronics. May 2000 - Ed: 5D 1/6 BYT230PIV-400 / BYT231PIV-400 THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) Parameter Junction to case Per diode Total Coupling Value 1.5 0.8 0.1 Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Parameter Forward voltage drop Reverse leakage current Test Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C VR = VRRM IF = 30 A Min. Typ. Max. 1.5 1.4 35 6 µA mA Unit V Pulse test : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the conduction losses use the following equation: P = 1.1 x IF(AV) + 0.0095 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C IF = 1A VR = 30V dI F/dt = - 15A/µs IF = 0.5A IR = 1A Irr = 0.25A TURN-OFF SWITCHING CHARACTERISTICS Symbol tIRM IRM Parameter M ax i m um rev ers e rec ov ery t im e M ax i m um rev ers e rec ov ery c urrent Turn-off overvoltage coefficient Test Conditions dIF/dt = - 120 A/µs dIF/dt = - 240 A/µs dIF/dt = - 120 A/µs dIF/dt = - 240 A/µs VCC = 200 V IF = 30 A Lp ® 0.05 µH Tj = 100°C (see fig. 13) Min. Typ. Max. Unit 75 ns 50 9 12 3.3 / A Min. Typ. Max. 100 50 Unit ns C= VRP VCC Tj = 100°C VCC = 60V IF = IF(AV) dIF/dt = - 30A/µs Lp = 1µH (see fig. 14) 2/6 BYT230PIV-400 / BYT231PIV-400 Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Peak current versus form factor (per diode). PF(av)(W) 60 50 40 δ = 0.05 δ = 0.2 δ = 0.1 δ=1 δ = 0.5 IM(A) 250 T 200 δ=tp/T tp 150 100 P=40W 30 P=50W P=30W 20 10 IF(av) (A) 0 0 5 10 15 20 25 30 δ=tp/T T 50 tp P=20W 35 40 0 0.0 δ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Average forward current versus ambient temperature (δ=0.5, per diode). Fig. 4: Non repetitive surge peak forward current versus overload duration (per diode). IF(av)(A) 35 Rth(j-a)=Rth(j-c) IM(A) 200 180 160 140 Rth(j-a)=5°C/W Tc=50°C Tc=25°C 30 25 20 15 10 5 0 0 δ=tp/T T 120 100 80 IM t δ=0.5 Tc=75°C tp Tamb(°C) 50 75 100 125 150 60 40 1E-3 t(s) 1E-2 1E-1 1E+0 25 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). K=[Zth(j-c)/Rth(j-c)] 1.0 IFM(A) 200.0 100.0 Typical values Tj=100°C 0.5 δ = 0.5 10.0 δ = 0.2 Tj=25°C 0.2 δ = 0.1 T 1.0 tp Tj=100°C Single pulse tp(s) 0.1 1E-3 1E-2 1E-1 δ=tp/T VFM(V) 1E+0 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3/6 BYT230PIV-400 / BYT231PIV-400 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). Fig. 8: Recovery charges versus dIF/dt (per diode). C(pF) 100 90 80 70 60 50 40 30 20 1 VR(V) 10 100 200 100 F=1MHz Tj=25°C Qrr(nC) 1000 IF=IF(av) 90% confidence Tj=100°C dIF/dt(A/ µs) 10 10 20 50 100 200 500 Fig. 9: Recovery current versus dIF/dt (per diode). Fig. 10: Transient peak forward voltage versus dIF/dt (per diode). IRM(A) 50 30 IF=IF(av) 90% confidence Tj=100°C VFP(V) IF=IF(av) 90% confidence Tj=100°C 25 20 10 15 10 dIF/dt(A/ µs) 5 200 500 0 0 100 dIF/dt(A/ µs) 1 10 20 50 100 200 300 400 500 Fig. 11: Forward recovery time versus dIF/dt (per diode). Fig. 12: Dynamic parameters versus junction temperature. tfr( µs) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0 100 dIF/dt(A/ µs) IF=IF(av) 90% confidence Tj=100°C Qrr;IRM[Tj] / Qrr;IRM[Tj=100 °C] 1.50 1.25 1.00 0.75 0.50 200 300 400 500 0.25 0 25 IRM Qrr Tj(°C) 50 75 100 125 150 4/6 BYT230PIV-400 / BYT231PIV-400 Fig. 13: Turn-off switching characteristics (without serie inductance). Fig. 14: Turn-off switching characteristics (with serie inductance). IF DUT LC VCC VF di F/ dt IF DUT LC LP di F/ dt VCC VF VCC I RM VCC tIRM VRP 5/6 BYT230PIV-400 / BYT231PIV-400 PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Ordering type BYT230PIV-400 BYT231PIV-400 n Marking BYT230PIV-400 BYT231PIV-400 Package ISOTOP ISOTOP Weight 28 g. (without screws) 28 g. (without screws) Base qty 10 10 Delivery mode Tube Tube n n Cooling method: by conduction (C) Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All rights reserved. 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