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E-L293DD013TR

E-L293DD013TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOIC20_300MIL

  • 描述:

    IC MTR DRV BIPOLR 4.5-36V 20SOIC

  • 数据手册
  • 价格&库存
E-L293DD013TR 数据手册
L293D L293DD ® PUSH-PULL FOUR CHANNEL DRIVER WITH DIODES 600mA OUTPUT CURRENT CAPABILITY PER CHANNEL 1.2A PEAK OUTPUT CURRENT (non repetitive) PER CHANNEL ENABLE FACILITY OVERTEMPERATURE PROTECTION LOGICAL "0" INPUT VOLTAGE UP TO 1.5 V (HIGH NOISE IMMUNITY) INTERNAL CLAMP DIODES DESCRIPTION The Device is a monolithic integrated high voltage, high current four channel driver designed to accept standard DTL or TTL logic levels and drive inductive loads (such as relays solenoides, DC and stepping motors) and switching power transistors. To simplify use as two bridges each pair of channels is equipped with an enable input. A separate supply input is provided for the logic, allowing operation at a lower voltage and internal clamp diodes are included. This device is suitable for use in switching applications at frequencies up to 5 kHz. SO(12+4+4) Powerdip (12+2+2) ORDERING NUMBERS: L293DD L293D The L293D is assembled in a 16 lead plastic packaage which has 4 center pins connected together and used for heatsinking The L293DD is assembled in a 20 lead surface mount which has 8 center pins connected together and used for heatsinking. BLOCK DIAGRAM July 2003 1/7 L293D - L293DD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VS Supply Voltage 36 V VSS Vi Ven Logic Supply Voltage Input Voltage 36 7 V V Enable Voltage Peak Output Current (100 µs non repetitive) 7 1.2 V A Io Ptot Tstg, Tj Total Power Dissipation at Tpins = 90 °C Storage and Junction Temperature 4 W – 40 to 150 °C PIN CONNECTIONS (Top view) Powerdip(12+2+2) SO(12+4+4) THERMAL DATA Symbol Decription Rth j-pins Rth j-amb Thermal Resistance Junction-pins Thermal Resistance junction-ambient Rth j-case Thermal Resistance Junction-case (*) With 6sq. cm on board heatsink. 2/7 DIP SO Unit max. max. – 80 14 50 (*) °C/W °C/W max. 14 – L293D - L293DD ELECTRICAL CHARACTERISTICS (for each channel, VS = 24 V, VSS = 5 V, Tamb = 25 °C, unless otherwise specified) Symbol VS VSS IS ISS Parameter Test Conditions Min. Typ. Max. Unit Supply Voltage (pin 10) VSS 36 V Logic Supply Voltage (pin 20) Total Quiescent Supply Current (pin 10) 4.5 V mA Total Quiescent Logic Supply Current (pin 20) VIL Input Low Voltage (pin 2, 9, 12, 19) VIH Input High Voltage (pin 2, 9, 12, 19) Vi = L ; IO = 0 ; Ven = H 2 36 6 Vi = H ; IO = 0 ; Ven = H 16 24 mA 44 4 60 mA mA Ven = L Vi = L ; IO = 0 ; Ven = H Vi = H ; IO = 0 ; Ven = H 16 22 mA Ven = L 16 – 0.3 24 1.5 mA V 2.3 2.3 VSS 7 V V – 10 µA 100 µA – 0.3 1.5 V 2.3 2.3 VSS 7 V V – 100 µA ± 10 µA VSS ≤ 7 V VSS > 7 V IIL Low Voltage Input Current (pin 2, 9, 12, 19) VIL = 1.5 V IIH High Voltage Input Current (pin 2, 9, 12, 19) 2.3 V ≤ VIH ≤ VSS – 0.6 V 30 Ven L Enable Low Voltage (pin 1, 11) Ven H Enable High Voltage (pin 1, 11) VSS ≤ 7 V VSS > 7 V Ien L Low Voltage Enable Current (pin 1, 11) Ven L = 1.5 V Ien H High Voltage Enable Current (pin 1, 11) 2.3 V ≤ Ven H ≤ VSS – 0.6 V VCE(sat)H Source Output Saturation Voltage (pins 3, 8, 13, 18) IO = – 0.6 A 1.4 1.8 V VCE(sat)L Sink Output Saturation Voltage (pins 3, 8, 13, 18) IO = + 0.6 A 1.2 1.8 V VF Clamp Diode Forward Voltage IO = 600nA 1.3 V tr Rise Time (*) 0.1 to 0.9 VO 250 ns tf Fall Time (*) Turn-on Delay (*) Turn-off Delay (*) 0.9 to 0.1 VO 0.5 Vi to 0.5 VO 0.5 Vi to 0.5 VO 250 750 200 ns ns ns ton toff – 30 (*) See fig. 1. 3/7 L293D - L293DD Figure 1: Switching Times TRUTH TABLE (one channel) Input Enable (*) Output H L H L H H L L H L Z Z Z = High output impedance (*) Relative to the considered channel Figure 2: Junction to ambient thermal resistance vs. area on board heatsink (SO12+4+4 package) 4/7 L293D - L293DD mm DIM. MIN. a1 0.51 B 0.85 b b1 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.40 0.033 0.50 0.38 0.055 0.020 0.50 D 0.015 0.020 20.0 0.787 E 8.80 0.346 e 2.54 0.100 e3 17.78 0.700 F 7.10 0.280 I 5.10 0.201 L OUTLINE AND MECHANICAL DATA 3.30 0.130 Powerdip 16 Z 1.27 0.050 5/7 L293D - L293DD mm inch OUTLINE AND MECHANICAL DATA DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.35 2.65 0.093 0.104 A1 0.1 0.3 0.004 0.012 B 0.33 0.51 0.013 0.020 C 0.23 0.32 0.009 0.013 D 12.6 13 0.496 0.512 E 7.4 7.6 0.291 0.299 e 1.27 0.050 H 10 10.65 0.394 0.419 h 0.25 0.75 0.010 0.030 L 0.4 1.27 0.016 0.050 SO20 K 0˚ (min.)8˚ (max.) L h x 45˚ A B e A1 K H D 20 11 E 1 0 1 SO20MEC 6/7 C L293D - L293DD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7
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