EMIF04-MMC02F2

EMIF04-MMC02F2 4-line IPAD™, EMI filter including ESD protection Features ■ EMI symmetrical (I/O) low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.57 mm x 2.07 mm ■ Very thin package: 0.65 mm ■ High efficiency in ESD suppression ■ High reliability offered by monolithic integration ■ High reduction of parasitic elements through integration and wafer level packaging ) s t( c u d Complies with the standards: ■ IEC 61000-4-2 Level 4 – 15 kV (air discharge) – 8 kV (contact discharge) Application o s b s ( t c u d o r P e t e l o e t le Figure 1. O ) Where EMI filtering in ESD sensitive equipment is required: ■ o r P Flip Chip 11 bumps Figure 2. Pin layout (bump side) 3 2 1 I1 O1 I2 VD2 O2 B I3 VD1 O3 C I4 GND O4 D A Device configuration MultiMediaCard for mobile phones, personal digital assistant, digital camera, MP3 players... s Description b O VD2 R20 VD1 R10 R1 O1 (Data) I1 R2 I2 R3 I3 The EMIF04-MMC02 is a highly integrated device designed to suppress EMI/RFI noise for a MultiMediaCard port. The EMIF04 Flip Chip packaging means the package size is equal to the die size. O2 (CLK) O3 (CMD) O4 I4 R4 Cline = 20pF max. GND This filter includes ESD protection circuitry, which prevents damage to the application when it is subjected to ESD surges up to 15 kV. TM: IPAD is a trademark of STMicroelectronics. May 2011 Doc ID 10949 Rev 5 1/8 www.st.com 8 Electrical characteristics 1 EMIF04-MMC02F2 Electrical characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter DC power per resistor 70 mW Tj Junction temperature 125 °C Top Operating temperature range -40 to + 85 °C Tstg Storage temperature range -55 to +150 °C \ Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between input and output Cline Input capacitance per line Symbol Ob 2/8 c u d Parameters VBR IRM Cline @0V r P e e t le o r P o s b O ) s ( t c u d o VBR ) s t( Electrical characteristics (Tamb = 25 °C) Symbol so Unit PR Table 2. let Value Test conditions IR = 1 mA Min Typ Max 6 VRM = 3 V V 0.1 R1,R2,R3,R4 Tolerance ± 5% Unit 0.5 µA 20 pF 47 Ω R10 Tolerance ± 5% 13 kΩ R20 Tolerance ± 5% 56 kΩ Doc ID 10949 Rev 5 EMIF04-MMC02F2 Figure 3. Electrical characteristics S21 (dB) attenuation measurement Figure 4. and Aplac simulation Xtalk measurements C3/B1 EMIF04-MMC02F2: Aplac vs measurement (C3/C1 line) 0.00 dB - 5.00 Cross talk measurement 0.00 dB -10.00 Simulation - 10.00 -20.00 Measurement - 15.00 -30.00 - 20.00 - 25.00 -40.00 - 30.00 -50.00 - 35.00 -60.00 - 40.00 - 50.00 1.0M Figure 5. 3.0M 10.0M 30.0M 100.0M f/Hz 300.0M 1.0G -80.00 1.0M 3.0G ESD response to IEC 61000-4-2 (+15kV contact discharge) on one input (Vin) and one output (Vout) Figure 6. 3.0M 10.0M o s b Vin 100.0M 300.0M f/Hz 1.0G c u d 3.0G o r P Vin O ) Vout 30.0M ESD response to IEC 61000-4-2 (-15kV contact discharge) on one input (Vin) and one output (Vout) e t le s ( t c Vout u d o Figure 7. r P e Junction capacitance versus reverse applied voltage typical values let so Ob ) s t( -70.00 - 45.00 C(pF) 20 F=1MHz Vosc=30mVRMS Tj=25°C 18 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VR(V) Doc ID 10949 Rev 5 3/8 Application information 2 EMIF04-MMC02F2 Application information Figure 8. Device structure B22 C22 R20 R10 R1 A22 A33 R2 B33 B11 ) s t( R3 C33 C11 R4 D33 c u d MODEL = demif04 MODEL = demif04 l o s D2 ) s t( uc Rbump Lbump A3 od + ol e t e bs O 4/8 b O - Model demif04 BV = 7 IBV = 1m CJO = Cz M = 0.3333 RS = 1 VJ = 0.6 TT = 100n bulk Model demif04 gnd BV = 7 IBV = 1m CJO = Cz_gnd M = 0.3333 RS = RS_gnd VJ = 0.6 TT = 100n Aplac model connections D2 Pr Lbump ro P e et MODEL = demif04_gnd Figure 9. D11 A33 Rbump Rbump Lbump B33 + bulk Rbump Lbump B22 B2 B11 B1 + bulk Cbump Rbump Cbump Rbump Cbump Rbump Rbump Lbump Rbump Lbump Rbump Lbump C33 C3 + Lgnd bulk Cbump Rbump Cgnd bulk Cbump Rbump Rbump Lbump + A22 + bulk Cbump Rbump B3 Rbump Lbump A2 C22 C2 + + bulk Cbump Rbump Rbump Lbump D33 D11 D1 Rgnd + + bulk Cbump Rbump Cbump Rbump Doc ID 10949 Rev 5 Diodes aplacvar Cz 14.9pF aplacvar Cz_gnd 47.9pF aplacvar Rs_gnd 480 m bulk Cbump Rbump Rbump Lbump D3 bulk C11 C1 Device aplacvar R1 50.053 aplacvar R2 50.053 aplacvar R3 50.053 aplacvar R4 50.053 aplacvar R10 13 k aplacvar R20 56 k aplacvar Rsub 120 m bulk Bumps aplacvar Rbump 20 m aplacvar Lbump 50 pH aplacvar Cbump 1.5 p Gnd aplacvar Lgnd 95 pH aplacvar Rgnd 100 m aplacvar Cgnd 0.6 pF EMIF04-MMC02F2 3 Ordering information scheme Ordering information scheme Figure 10. Ordering information scheme EMIF yy - xxx zz Fx EMI Filter Number of lines ) s t( Information x = resistance value (Ohms) z = capacitance value / 10(pF) or 3 letters = application 2 digits = version Package F = Flip Chip x = 2: Lead-free, pitch = 500 µm, bump = 315 µm e t le c u d o r P o s b O ) 4 Package information s ( t c In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. u d o r P e Figure 11. Flip Chip dimensions 315 µm ± 50 2.04mm ± 30 µm 650 µm ± 65 285 µm 1.47mm ± 30 µm 285 µm O o s b 500 µm ± 50 500 µm ± 50 let Doc ID 10949 Rev 5 5/8 Ordering information EMIF04-MMC02F2 Figure 12. Footprint Figure 13. Marking Dot, ST logo xx = marking z = manufacturing location yww = datecode (y = year ww = week) Copper pad Diameter: 250 µm recommended, 300 µm max E x x z y ww Solder stencil opening: 330 µm Solder mask opening recommendation: 340 µm min for 315 µm copper pad diameter Figure 14. Flip Chip tape and reel specification 2.17 xxz yww ST E 1.67 s ( t c All dimensions in mm xxz yww O ) 0.73 ± 0.05 ST E xxz yww ST E o s b 3.5 ± 0.1 8 ± 0.3 e t le o r P 1.75 ± 0.1 Ø 1.5 ± 0.1 4 ± 0.1 ) s t( c u d Dot identifying Pin A1 location 4 ± 0.1 User direction of unreeling u d o 5 r P Ordering information e t ole s b O Note: Table 3. Ordering information Order code EMIF04-MMC02F2 Marking Package Weight Base qty Delivery mode FH Flip Chip 4.5 mg 5000 Tape and reel (7”) More packing information is available in the applications note: AN1235: “Flip Chip: package description and recommendations for use” AN 1751: “EMI filters: Recomendations and measurements” 6/8 Doc ID 10949 Rev 5 EMIF04-MMC02F2 6 Revision history Revision history Table 4. Document revision history Date Revision Changes 14-Oct-2004 1 First issue 06-Apr-2005 2 Minor layout update. No content change. 25-Aug-2005 3 Reformatted to current standard, Aplac model updated in section 2. 28-Apr-2008 4 Updated ECOPACK statement. Updated Figure 10, Figure 11 and Figure 14. Reformatted to current standards. 27-May-2011 5 Updated Figure 11 for die dimensions. Updated Figure 14 for pocket scale. ) s t( c u d e t le o r P o s b O ) s ( t c u d o r P e t e l o s b O Doc ID 10949 Rev 5 7/8 EMIF04-MMC02F2 ) s t( Please Read Carefully: c u d Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. e t le o r P Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. o s b No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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