IRF840_02

N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh™II MOSFET TYPE IRF840 s s s s s IRF840 VDSS 500 V RDS(on) < 0.85 Ω ID 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ± 20 8 5.1 32 125 1.0 3.5 –65 to 150 150 (1)ISD ≤8A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C (•)Pulse width limited by safe operating area May 2002 1/8 IRF840 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1 62.5 300 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 8 520 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V Min. 500 1 50 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 3.5 A Min. 2 Typ. 3 0.75 Max. 4 0.85 Unit V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 6.4 832 131 17 Max. Unit S pF pF pF 2/8 IRF840 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 400V, ID = 7 A, VGS = 10V Min. Typ. 10 21 29.6 4.9 13.9 39 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400V, ID = 7 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 9 9 19 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8 A, VGS = 0 ISD = 7 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 384 2.2 11.8 Test Conditions Min. Typ. Max. 8 32 1.6 Unit A A V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/8 IRF840 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 IRF840 Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 IRF840 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 IRF840 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 7/8 IRF840 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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