L6375D

L6375D 0.5 A high-side driver intelligent power switch Features • • • • • • • • • • • • • • 0.5 A output current 8 to 35 V supply voltage range Internal current limit Non-dissipative short-circuit protection Thermal shutdown Undervoltage lockout with hysteresis Internal negative voltage clamping for fast demagnetization Differential inputs with large common mode range and threshold hysteresis Open load detection Two diagnostic outputs Open ground protection Output status LED driver Immunity against burst transient (IEC 61000-4-4) ESD protection (human body model ±2 kV) Description The L6375D is a monolithic intelligent power switch in multipower BCD technology to drive inductive, capacitive or resistive loads with controlled output voltage slew rate and short-circuit protection. An internal clamping diode enables the fast demagnetization of inductive loads. Diagnostic for CPU feedback and extensive use of electrical protections make this device robust and suitable for industrial automation applications. Product status link L6375D Order code L6375D L6375D0 13TR Temper ature range -25 to +125 °C Package Packing Tube SO20 Tape and reel DS5360 - Rev 4 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com L6375D Pin configuration 1 Pin configuration Figure 1. Pin connections (top view) N.C. 1 20 N.C. GND 2 19 ON DELAY N.C. 3 18 N.C. OUTPUT 4 17 INPUT+ N.C. 5 16 N.C. VS 6 15 DIAG2 N.C. 7 14 DIAG1 N.C. 8 13 N.C. N.C. 9 12 N.C. OUTPUT STATUS 10 11 N.C. SO-20 Table 1. Pin description DS5360 - Rev 4 Pin Pin name 2 GND 4 OUTPUT 6 VS Supply voltage input; the value of the supply voltage is monitored to detect undervoltage condition 10 Output status This current source output is capable of driving an LED to signal the status of the output pin. The pin is active (source current) when the output pin is considered high 14 DIAG1 DIAGNOSTIC 1 output. This open drain reports the IC working conditions (see Table 6: Diagnostic truth table) 15 DIAG2 DIAGNOSTIC 2 output. This open drain reports the IC working conditions (see Table 6: Diagnostic truth table) 17 IN+ 19 ON-DELAY 1, 3, 5, 7, 8, 9, 11, 12, 13, 16, 18, 20 N.C. Function Ground High side output with built-in current limitation Comparator inverting input Programmable ON time interval duration during short-circuit operation Not connected page 2/16 L6375D Maximum ratings 2 Maximum ratings Table 2. Absolute maximum ratings Symbol Vs VS- VOUT Parameter Value Unit Supply voltage (tw ≤ 10 ms) 50 V Supply voltage (DC) 40 V Internally limited V Supply to output differential voltage Vod ON DELAY pin voltage -0.3 to 7 V Iod ON DELAY pin current ±1 mA Iout Output current Internally limited A Vout Output voltage Internally limited V 200 mJ EI Energy inductive load: TJ = 85 °C Ptot Power dissipation Internally limited W Vdiag DIAGx pin voltage -0.3 to 40 V Idiag DIAGx pin current -10 to 10 mA Ii IN+ pin current 20 mA Vi IN+ pin voltage -10 to Vs+0.3 V Top Ambient temperature, operating range -25 to 85 °C TJ Junction temperature, operating range -25 to 125 °C Storage temperature -55 to 150 °C Tstg Table 3. Thermal data Symbol Parameter Value Rth(JA) Thermal resistance junction-ambient 65 max.(1) Rth(JP) Thermal resistance junction-pins 15 max. Unit °C/W 1. When mounted on an FR4 printed circuit board with 0.5 cm2 of Cu (at least 35 mm thick). DS5360 - Rev 4 page 3/16 L6375D Electrical characteristics 3 Electrical characteristics VS = 24 V; TJ = -25 to 125 °C, unless otherwise specified. Table 4. Electrical characteristics Symbol Test conditions Min. Vsmin Supply voltage for valid diagnostic VS Operative supply voltage 8 Vsth1 Undervoltage threshold 1 Vsth2 Vshys Iq Iqo Idiag ≥ 0.5 mA; Vdiag = 1.5 V Typ. Max. Unit 35 V 24 35 V 7 7.5 8 V Undervoltage threshold 2 6.5 7 7.5 V Undervoltage hysteresis 300 500 700 mV Quiescent current 4 Output open 800 μA Output on 1.6 mA Vith IN+ pin threshold voltage 0.8 Viths IN+ pin threshold hysteresis Vil IN+ pin low level voltage Vih IN+ pin high level voltage Iib Idch Vdon DS5360 - Rev 4 Parameter 2 V 50 400 mV -7 0.8 V VS < 18 V 2 VS-3 VS >18 V 2 15 IN+ pin bias current Vi = -7 to 15 V -250 250 Delay capacitor charging current ON DELAY pin shorted-toground 2.5 Iout = 500 mA; TJ = 25 °C 200 280 TJ = 125 °C 320 440 Iout = 625 mA; TJ = 25 °C 250 350 TJ = 125 °C 400 550 Output voltage drop Iolk Output leakage current Vi= low; Vout = 0 Vol Output low-state voltage Vi= high; pin floating Vcl Internal voltage clamp (Vs- Vout) Io = 200 mA single pulsed = 300 ms ISC Short-circuit output current Iold Open load detection current Voth1 1.3 V μA μA mV 100 μA 0.8 1.5 V 48 53 58 V VS = 8 to 35 V; Rl = 2 Ω 0.75 1.1 1.5 A Vi = Vih; TA = 0 to +85 °C 1 3 6 mA Output status threshold 1 voltage 4.5 5 5.5 V Voth2 Output status threshold 2 voltage 4 4.5 5 V Vohys Output status threshold hysteresis 300 500 700 mV Iosd Output status source current Vout > Voth1; VOS = 2.5 V 4 mA Vosd Active output status driver drop voltage VS – VOS; IOS = 2 mA; TA = 0 to +85 °C 3 V Ioslk Output status driver leakage current Vout < Voth2; VOS = 0 V; VS = 18 to 35 V 25 μA 2 1.5 page 4/16 L6375D Electrical characteristics Symbol Vdgl Parameter Diagnostic drop voltage Test conditions Min. Typ. D1 / D2 = L; Idiag = 0.5 mA 40 D1 / D2 = L; Idiag = 3 mA 250 Max. Unit mV D1 / D2 = H; Idglk Diagnostic leakage current 0 < Vdg < VS 5 μA VS = 15.6 to 35 V Tmax. Overtemperature upper threshold 150 °C Thys Overtemperature hysteresis 20 °C AC operation tr- tf Rise or fall time td Delay time dV/dt Slew rate (rising and falling edge) tON On-time during short-circuit condition tOFF fmax. 20 Vs = 24 V; Rl = 70 Ω; Rl to ground 0.7 50 pF < CDON < 2 nF μs 5 1 1.5 V/μs 1.28 μs/pF Off-time during short-circuit condition 64 tON Maximum operating frequency 25 kHz Source drain NDMOS diode DS5360 - Rev 4 Vfsd Forward on voltage Ifsd = 625 mA Ifp Forward peak current tp = 10 ms; duty cycle = 20% trr Reverse recovery time Ifsd = 625 mA; dlfsd/dt = 25 A/ μs tfr Forward recovery time 1 1.5 V 2 A 200 ns 50 ns page 5/16 L6375D Schematic diagram 3.1 Schematic diagram Figure 2. Block diagram Figure 3. Switching waveforms 3.2 Input section A single ended input TTL/CMOS compatible with a wide voltage range and high noise immunity (thanks to a builtin hysteresis) is available. DS5360 - Rev 4 page 6/16 L6375D Overtemperature protection (OVT) 3.3 Overtemperature protection (OVT) On-chip overtemperature protection provides an excellent protection of the device in extreme conditions. Whenever the temperature, measured on a central portion of the chip, exceeds Tmax. = 150 °C (typical value) the device shuts down, and the DIAG2 output goes low. Normal operation is resumed as the chip temperature (normally after few seconds) falls below Tmax.-Thys = 130 °C (typical value). The hysteresis avoids that an intermittent behavior occurs. 3.4 Undervoltage protection (UV) The supply voltage operates correctly in a range from 8 to 35 V. Below 8 V the overall system has to be considered not reliable. To avoid any malfunctioning, the supply voltage is continuously monitored to provide an undervoltage protection. As Vs falls below Vsth-Vshys (typically 7.5 V) the output power MOSFET switches off and DIAG1 and DIAG2 output go low. Normal operation is resumed as soon as Vs exceeds Vsth. The hysteretic behavior prevents intermittent operation at low supply voltage. 3.5 Overcurrent operation In order to implement a short-circuit protection, the output power MOSFET is driven to linear mode to limit the output current to the ISC value (1.1 A typical value). This condition (current limited to the ISC value) lasts for a TON time interval that can be set by a capacitor (CDON) connected to the ON DELAY pin according to the following formula: Equation 1: tON = 1.28 μs/pF for 50 pF < CDON < 2 nF After the tON interval has expired the output power MOSFET switches off for the tOFF time interval: Equation 2: tOFF = 64· tON Figure 4. Short-circuit operation waveforms OUTPUT CURRENT Isc Iout t