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M24C16-WMN6T

M24C16-WMN6T

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOICN8_150MIL

  • 描述:

    IC EEPROM 16KBIT I2C 400KHZ 8SO

  • 数据手册
  • 价格&库存
M24C16-WMN6T 数据手册
M24C16-W M24C16-R M24C16-F Datasheet 16-Kbit serial I2C bus EEPROM Features • SO8 (MN) TSSOP8 (DW) 150 mil width • 169 mil width • UFDFPN8 (MC) DFN8 - 2x3 mm • UFDFPN5 (MH) DFN5 - 1.7x1.4 mm • Unsawn wafer Product status link M24C16-W M24C16-R M24C16-F • • • • • Compatible with following I2C bus modes: – 400 kHz – 100 kHz Memory array: – 16 Kbit (2 Kbyte) of EEPROM – Page size: 16 byte Single supply voltage: – M24C16-W: 2.5 V to 5.5 V – M24C16-R: 1.8 V to 5.5 V – M24C16-F: 1.7 V to 5.5 V (full temperature range) and 1.6 V to 1.7 V (limited temperature range) Write time: – Byte write within 5 ms – Page write within 5 ms Operating temperature range: – from -40 °C up to +85 °C Random and sequential read modes Write protect of the whole memory array Enhanced ESD/latch-up protection More than 4 million Write cycles More than 200-year data retention Packages • • • • • SO8 ECOPACK2 TSSOP8 ECOPACK2 UFDFPN8 ECOPACK2 UFDFPN5 ECOPACK2 Unsawn wafer (each die is tested) DS9194 - Rev 11 - October 2020 For further information contact your local STMicroelectronics sales office. www.st.com M24C16-W M24C16-R M24C16-F Description 1 Description The M24C16 is a 16-Kbit I2C-compatible EEPROM (electrically erasable programmable memory) organized as 2K x 8 bits. The M24C16-W can be accessed (Read and Write) with a supply voltage from 2.5 V to 5.5 V, the M24C16-R can be accessed (Read and Write) with a supply voltage from 1.8 V to 5.5 V, and the M24C16-F can be accessed with a supply voltage from 1.7 V to 5.5 V (over the full temperature range) or with an extended supply voltage from 1.6 V to 1.7 V. The M24C16-F can also operate down to 1.6 V, under some restricting conditions. All these devices operate with a clock frequency of 400 kHz (or lower). Figure 1. Logic diagram VCC SCL M24xxx SDA WC VSS MS30935V2 Table 1. Signal names Signal name Function Direction SDA Serial data I/O SCL Serial clock Input WC Write control Input VCC Supply voltage - VSS Ground - Figure 2. 8-pin package connections, top view NC 1 8 VCC NC 2 7 WC NC 3 6 SCL VSS 4 5 SDA MS30936V2 1. DS9194 - Rev 11 NC: Not Connected page 2/40 M24C16-W M24C16-R M24C16-F Description Figure 3. UFDFPN5 (DFN5) package connections 1. DS9194 - Rev 11 VCC 1 VSS 2 SDA 3 ABCD XYZW 5 WC 5 1 2 VSS 2 2 4 SCL 4 3 Top view Bottom view (marking side) (pads side) See Section 9 Package information for package dimensions, and how to identify pin 1 page 3/40 M24C16-W M24C16-R M24C16-F Signal description 2 Signal description 2.1 Serial clock (SCL) The signal applied on the SCL input is used to strobe the data available on SDA(in) and to output the data on SDA(out). 2.2 Serial data (SDA) SDA is an input/output used to transfer data in or data out of the device. SDA(out) is an open drain output that may be wire-OR'ed with other open drain or open collector signals on the bus. A pull-up resistor must be connected from serial data (SDA) to VCC (Figure 11 indicates how to calculate the value of the pull-up resistor). 2.3 Write control (WC) This input signal is useful for protecting the entire contents of the memory from inadvertent write operations. Write operations are disabled to the entire memory array when write control (WC) is driven high. Write operations are enabled when write control (WC) is either driven low or left floating. When write control (WC) is driven high, device select and address bytes are acknowledged, Data bytes are not acknowledged. 2.4 VSS (ground) VSS is the reference for the VCC supply voltage. 2.5 Supply voltage (VCC) 2.5.1 Operating supply voltage (VCC) Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage within the specified [VCC(min), VCC(max)] range must be applied (see Operating conditions in Section 8 DC and AC parameters). In order to secure a stable DC supply voltage, it is recommended to decouple the VCC line with a suitable capacitor (usually of the order of 10 nF to 100 nF) close to the VCC/VSS package pins. This voltage must remain stable and valid until the end of the transmission of the instruction and, for a write instruction, until the completion of the internal write cycle (tW). 2.5.2 Power-up conditions The VCC voltage has to rise continuously from 0 V up to the minimum VCC operating voltage (see Operating conditions in Section 8 DC and AC parameters). 2.5.3 Device reset In order to prevent inadvertent write operations during power-up, a power-on-reset (POR) circuit is included. At power-up, the device does not respond to any instruction until VCC has reached the internal reset threshold voltage. This threshold is lower than the minimum VCC operating voltage (see Operating conditions in Section 8 DC and AC parameters). When VCC passes over the POR threshold, the device is reset and enters the Standby Power mode; the device must not be accessed until VCC reaches a valid and stable DC voltage within the specified [VCC(min), VCC(max)] range (see Operating conditions in Section 8 DC and AC parameters). In a similar way, during power-down (continuous decrease in VCC), the device must not be accessed when VCC drops below VCC(min). When VCC drops below the threshold voltage, the device stops responding to any instruction sent to it. 2.5.4 Power-down conditions During power-down (continuous decrease in VCC), the device must be in the standby power mode (mode reached after decoding a Stop condition, assuming that there is no internal write cycle in progress). DS9194 - Rev 11 page 4/40 M24C16-W M24C16-R M24C16-F Memory organization 3 Memory organization The memory is organized as shown below. Figure 4. Block diagram SENSE AMPLIFIERS DATA REGISTER SCL ARRAY I/O X DECODER Y DECODER PAGE LATCHES SDA WC START & STOP DETECT CONTROL LOGIC HV GENERATOR + SEQUENCER ADDRESS REGISTER DS9194 - Rev 11 page 5/40 M24C16-W M24C16-R M24C16-F Device operation 4 Device operation The device supports the I2C protocol (see Figure 5). Any device that sends data on to the bus is defined a transmitter, and any device that reads the data a receiver. The device that controls the data transfer is known as the bus master, and the other as the slave device. A data transfer can only be initiated by the bus master, which also provides the serial clock for synchronization. The device is always a slave in all communications. Figure 5. I2C bus protocol SCL SDA SDA Input START Condition SCL 1 SDA MSB 2 SDA Change STOP Condition 3 7 8 9 ACK START Condition SCL 1 SDA MSB 2 3 7 8 9 ACK STOP Condition 4.1 Start condition Start is identified by a falling edge of serial data (SDA) while serial clock (SCL) is stable in the high state. A start condition must precede any data transfer instruction. The device continuously monitors (except during a write cycle) serial data (SDA) and serial clock (SCL) for a start condition. 4.2 Stop condition Stop is identified by a rising edge of serial data (SDA) while serial clock (SCL) is stable and driven high. A stop condition terminates communication between the device and the bus master. A Read instruction that is followed by NoAck can be followed by a stop condition to force the device into the standby mode. A stop condition at the end of a Write instruction triggers the internal write cycle. 4.3 Data input During data input, the device samples serial data (SDA) on the rising edge of serial clock (SCL). For correct device operation, serial data (SDA) must be stable during the rising edge of serial clock (SCL), and the serial data (SDA) signal must change only when serial clock (SCL) is driven low. DS9194 - Rev 11 page 6/40 M24C16-W M24C16-R M24C16-F Acknowledge bit (ACK) 4.4 Acknowledge bit (ACK) The acknowledge bit is used to indicate a successful byte transfer. The bus transmitter, whether it be bus master or slave device, releases serial data (SDA) after sending eight bits of data. During the ninth clock pulse period, the receiver pulls serial data (SDA) low to acknowledge the receipt of the eight data bits. 4.5 Device addressing To start communication between the bus master and the slave device, the bus master must initiate a Start condition. Following this, the bus master sends the device select code, shown in not Table 2 (most significant bit first). Table 2. Device select code Device type identifier(1) Chip enable address RW b7 b6 b5 b4 b3 b2 b1 b0 1 0 1 0 A10 A9 A8 RW 1. The most significant bit, b7, is sent first. The eighth bit is the Read/Write bit (R/W), set to 1 / 0, respectively, for Read / Write operations. If a match occurs on the device select code, the corresponding device gives an acknowledgement on serial data (SDA) during the ninth bit time. If the device does not match the device select code, it deselects itself from the bus, and goes into standby mode. DS9194 - Rev 11 page 7/40 M24C16-W M24C16-R M24C16-F Instructions 5 Instructions 5.1 Write operations Following a start condition the bus master sends a device select code with the R/W bit (RW) reset to 0. The device acknowledges this, as shown in Figure 6, and waits for the address byte. The device responds to each address byte with an acknowledge bit, and then waits for the data byte. Table 3. Address byte A7 A6 A5 A4 A3 A2 A1 A0 When the bus master generates a stop condition immediately after a data byte Ack bit (in the "10th bit" time slot), either at the end of a byte write or a page write, the internal write cycle tW is triggered. A stop condition at any other time slot does not trigger the internal write cycle. After the stop condition and the successful completion of an internal write cycle (tW), the device internal address counter is automatically incremented to point to the next byte after the last modified byte. During the internal write cycle, serial data (SDA) is disabled internally, and the device does not respond to any requests. If the write control input (WC) is driven high, the Write instruction is not executed and the accompanying data bytes are not acknowledged , as shown in Figure 7. DS9194 - Rev 11 page 8/40 M24C16-W M24C16-R M24C16-F Write operations 5.1.1 Byte write After the device select code and the address byte, the bus master sends one data byte. If the addressed location is write-protected, by write control (WC) being driven high, the device replies with NoAck, and the location is not modified. If, instead, the addressed location is not write-protected, the device replies with Ack. The bus master terminates the transfer by generating a stop condition, as shown in Figure 6. Figure 6. Write mode sequences with WC = 0 (data write enabled) WC ACK ACK Data in Stop Byte address Dev Select Start Byte Write ACK R/W WC ACK Dev Select Start Page Write ACK Byte address ACK Data in 1 ACK Data in 2 Data in 3 R/W WC (cont'd) ACK Data in N Stop Page Write(cont'd) ACK DS9194 - Rev 11 page 9/40 M24C16-W M24C16-R M24C16-F Write operations 5.1.2 Page Write The page write mode allows up to 16 byte to be written in a single write cycle, provided that they are all located in the same page in the memory: that is, the most significant memory address bits, A10/A4, are the same. If more bytes are sent than fit up to the end of the page, a "roll-over" occurs, i.e. the bytes exceeding the page end are written on the same page, from location 0. The bus master sends from 1 to 16 byte of data, each of which is acknowledged by the device if write control (WC) is low. If write control (WC) is high, the contents of the addressed memory location are not modified, and each data byte is followed by a NoAck, as shown in Figure 7. After each transferred byte, the internal page address counter is incremented. The transfer is terminated by the bus master generating a Stop condition. Figure 7. Write mode sequences with WC = 1 (data write inhibited) WC ACK Byte address NO ACK Data in Stop Dev select Start Byte Write ACK R/W WC ACK Dev select Start Page Write ACK Byte address NO ACK Data in 1 NO ACK Data in 2 Data in 3 R/W WC (cont'd) NO ACK Data in N Stop Page Write(cont'd) NO ACK DS9194 - Rev 11 page 10/40 M24C16-W M24C16-R M24C16-F Write operations 5.1.3 Minimizing write delays by polling on ACK The maximum write time (tw) is shown in AC characteristics tables in Section 8 DC and AC parameters, but the typical time is shorter. To make use of this, a polling sequence can be used by the bus master. The sequence, as shown in Figure 8, is: • Initial condition: a write cycle is in progress. • Step 1: the bus master issues a Start condition followed by a device select code (the first byte of the new instruction). • Step 2: if the device is busy with the internal write cycle, no ACK is returned and the bus master goes back to step 1. If the device has terminated the internal write cycle, it responds with an ACK, indicating that the device is ready to receive the second part of the instruction (the first byte of this instruction having been sent during Step 1). Figure 8. Write cycle polling flowchart using ACK Write cycle in progress Start condition Device select with RW = 0 NO ACK returned YES First byte of instruction with RW = 0 already decoded by the device NO Next operation is addressing the memory YES Send address and receive ACK Re-start Stop Note: DS9194 - Rev 11 NO StartCondition YES Data for the write operation Device select with RW = 1 Continue the write operation Continue the random read operation The seven most significant bits of the device select code of a random read (bottom right box in the figure)must be identical to the seven most significant bits of the device select code of the write (polling instruction in the figure). page 11/40 M24C16-W M24C16-R M24C16-F Read operations 5.2 Read operations Read operations are performed independently of the state of the write control (WC) signal. After the successful completion of a read operation, the device internal address counter is incremented by one, to point to the next byte address. For the read instructions, after each byte read (data out), the device waits for an acknowledgement (data in) during the 9th bit time. If the bus master does not acknowledge during this 9th time, the device terminates the data transfer and switches to its standby mode. Figure 9. Read mode sequences ACK NO ACK Current Address Read Data out Stop R/W ACK Random Address Read Byte address R/W ACK Sequential Current Read Dev select * ACK NO ACK Data out R/W ACK NO ACK Data out 1 Data out N Stop Start Dev select R/W ACK Start Dev select * ACK Byte address R/W ACK ACK Dev select * Start Sequential Random Read ACK Start Start Dev select * ACK Stop Start Dev select ACK Data out 1 R/W NO ACK Stop Data out N 5.2.1 Random address read A dummy write is first performed to load the address into this address counter (as shown in Figure 9) but without sending a stop condition. Then, the bus master sends another start condition, and repeats the device select code, with the R/W bit set to 1. The device acknowledges this, and outputs the contents of the addressed byte. The bus master must not acknowledge the byte, and terminates the transfer with a stop condition. DS9194 - Rev 11 page 12/40 M24C16-W M24C16-R M24C16-F Read operations 5.2.2 Current address read For the current address read operation, following a start condition, the bus master only sends a device select code with the R/W bit set to 1. The device acknowledges this, and outputs the byte addressed by the internal address counter. The counter is then incremented. The bus master terminates the transfer with a stop condition, as shown in Figure 9, without acknowledging the byte. 5.2.3 Sequential read This operation can be used after a current address read or a random address read. The bus master does acknowledge the data byte output, and sends additional clock pulses so that the device continues to output the next byte in sequence. To terminate the stream of bytes, the bus master must not acknowledge the last byte, and must generate a stop condition, as shown in Figure 9. The output data comes from consecutive addresses, with the internal address counter automatically incremented after each byte output. After the last memory address, the address counter "rolls-over", and the device continues to output data from memory address 00h. DS9194 - Rev 11 page 13/40 M24C16-W M24C16-R M24C16-F Initial delivery state 6 Initial delivery state The device is delivered with all the memory array bits set to 1 (each byte contains FFh). When delivered in unsawn wafer, all memory bits are set to 1 (each memory byte contains FFh) except the last byte located at address FFFh which is written with the value 22h. DS9194 - Rev 11 page 14/40 M24C16-W M24C16-R M24C16-F Maximum ratings 7 Maximum ratings Stressing the device outside the ratings listed in Table 4 may cause permanent damage to it. These are stress ratings only, and operation of the device at these, or any other conditions outside those indicated in the operating sections of this specification, is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 4. Absolute maximum ratings Symbol Min. Max. Unit Ambient operating temperature -40 130 °C TSTG Storage temperature –65 150 °C TLEAD Lead temperature during soldering see note (1) IOL DC output current (SDA = 0) - 5 mA VIO Input or output range –0.50 6.5 V VCC Supply voltage –0.50 6.5 V VESD Electrostatic pulse (human body model)(2) - 3000 V TA Parameter °C 1. Compliant with JEDEC Std J-STD-020D (for small body, Sn-Pb or Pb-free assembly), the ST ECOPACK 7191395 specification, and the European directive on Restrictions of Hazardous Substances (RoHS directive 2011/65/EU of July 2011). 2. Positive and negative pulses applied on different combinations of pin connections, according to AEC-Q100-002 (compliant with ANSI/ESDA/JEDEC JS-001-2012 standard, C1=100 pF, R1=1500 Ω). DS9194 - Rev 11 page 15/40 M24C16-W M24C16-R M24C16-F DC and AC parameters 8 DC and AC parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. Table 5. Operating conditions (voltage range W) Symbol Min. Max. Unit Supply voltage 2.5 5.5 V TA Ambient operating temperature -40 85 °C fC Operating clock frequency - 400 kHz Min. Max. Unit Supply voltage 1.8 5.5 V TA Ambient operating temperature -40 85 °C fC Operating clock frequency - 400 kHz VCC Parameter Table 6. Operating conditions (voltage range R) Symbol VCC Parameter Table 7. Operating conditions (voltage range F) Symbol VCC TA fC Parameter Min. Max. Unit V Supply voltage 1.60 1.65 1.70 5.5 Ambient operating temperature: READ -40 -40 -40 85 Ambient operating temperature: WRITE 0 -20 -40 85 Operating clock frequency - - - 400 °C kHz Table 8. AC measurement conditions Symbol Min. Max. Unit Load capacitance - 100 pF - SCL input rise/fall time, SDA input fall time - 50 ns - Input levels 0.2 VCC to 0.8 VCC - Input and output timing reference levels 0.3 VCC to 0.7 VCC Cbus DS9194 - Rev 11 Parameter V page 16/40 M24C16-W M24C16-R M24C16-F DC and AC parameters Figure 10. AC measurement I/O waveform Input voltage levels Input and output Timing reference levels 0.8VCC 0.7VCC 0.3V CC 0.2VCC Table 9. Input parameters Parameter(1) Symbol Test condition Min. Max. CIN Input capacitance (SDA) - - 8 CIN Input capacitance (other pins) - - 6 VIN < 0.3 VCC 30 - VIN > 0.7 VCC 500 - ZL ZH Input impedance (WC) Unit pF kΩ 1. Characterized only, not tested in production. Table 10. Cycling performance Symbol Ncycle Parameter Write cycle endurance (1) Test condition Max TA ≤ 25 °C, VCC(min) < VCC < VCC(max) 4,000,000 TA = 85 °C, VCC(min) < VCC < VCC(max) 1,200,000 Unit Write cycle (2) 1. The write cycle endurance is defined by characterization and qualification. 2. A write cycle is executed when either a page write or a byte write instruction is decoded. Table 11. Memory cell data retention Parameter Data retention (1) Test condition TA = 55 °C Min. Unit 200 Year 1. The data retention behaviour is checked in production, while the data retention limit defined in this table is extracted from characterization and qualification results. DS9194 - Rev 11 page 17/40 M24C16-W M24C16-R M24C16-F DC and AC parameters Table 12. DC characteristics (M24C16-W, device grade 6) Symbol ILI Input leakage current (SCL, SDA) ILO Output leakage current ICC Supply current (Read) ICC0 Test conditions (in addition to those in Table 5 and Table 8) Parameter Supply current (Write) Min. Max. VIN = VSS or VCC, device in Standby mode - ±2 SDA in Hi-Z, external voltage applied on SDA: VSS or VCC - ±2 VCC = 5.5 V, fc = 400 kHz - 1 VCC = 2.5 V, fc = 400 kHz - 1 - 1(1) - 2 Value overaged over tW, 2.5 V ≤ VCC ≤ 5.5 V Device not selected(2), ICC1 Standby supply current VIN = VSS or VCC, VCC = 2.5 V Device not selected(2), VIN = VSS or VCC, VCC = 5.5 V VIL Input low voltage (SCL, SDA, WC) VIH Input high voltage (SCL, SDA, WC) VOL Output low voltage IOL = 2.1 mA, VCC = 2.5 V or IOL = 3 mA, VCC = 5.5 V Unit µA mA µA - 3 –0.45 0.3 VCC 0.7 VCC VCC +1 - V 0.4 1. Characterized only, not tested in production. 2. The device is not selected after power-up, after a Read instruction (after the stop condition), or after the completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction). DS9194 - Rev 11 page 18/40 M24C16-W M24C16-R M24C16-F DC and AC parameters Table 13. DC characteristics (M24C16-R device grade 6) Symbol Parameter Test conditions(1) (in addition to those in Table 6 and Table 8) Min. Max. ILI Input leakage current (SCL, SDA) VIN = VSS or VCC, device in Standby mode - ±2 ILO Output leakage current SDA in Hi-Z, external voltage applied on SDA: VSS or VCC - ±2 ICC Supply current (Read) VCC = 1.8 V, fc= 400 kHz - 0.8 ICC0 Supply current (Write) - 1(2) ICC1 Standby supply current - 1 VIL Device not selected(3), VIN = VSS or VCC, VCC = 1.8 V –0.45 0.3 VCC (SCL, SDA, WC) VCC < 2.5 V –0.45 0.25 VCC VCC < 2.5 V 0.75 VCC 6.5 VCC < 2.5 V 0.75 VCC VCC+ 0.6 (SCL, SDA) Input high voltage Output low voltage IOL = 0.7 mA, VCC = 1.8 V - mA µA 2.5 V ≤ VCC (WC) VOL VCC ≤ 2.5 V µA Input low voltage Input high voltage VIH Value overaged over tW Unit V 0.2 1. If the application uses the voltage range R device with 2.5 V ≤ Vcc ≤ 5.5 V and -40 ° C < TA < +85 ° C refer to Table 12 instead of this table. 2. Characterized value, not tested in production. 3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction). DS9194 - Rev 11 page 19/40 M24C16-W M24C16-R M24C16-F DC and AC parameters Table 14. DC characteristics (M24C16-F device grade 6) Symbol ILI Parameter Input leakage current (SCL, SDA) Test conditions(1) (in addition to those in Table 7 and Table 8) VIN = VSS or VCC, device in standby mode Min. Max. - ±2 ILO Output leakage current SDA in Hi-Z, external voltage applied on SDA: VSS or VCC - ±2 ICC Supply current (Read) VCC = 1.6 V or 1.7 V, fc= 400 kHz - 0.8 ICC0 Supply current (Write) - 1(2) ICC1 Standby supply current - 1 VIL Device not selected(3), VIN = VSS or VCC, VCC ≤ 1.8 V –0.45 0.3 VCC (SCL, SDA, WC) VCC < 2.5 V –0.45 0.25 VCC VCC < 2.5 V 0.75 VCC 6.5 VCC < 2.5 V 0.75 VCC VCC+0.6 (SCL, SDA) Input high voltage Output low voltage IOL = 0.7 mA, VCC ≤ 1.8 V - µA mA µA 2.5 V ≤ VCC (WC) VOL VCC ≤ 2.5 V Input low voltage Input high voltage VIH Value overaged over tW, Unit V 0.2 1. If the application uses the voltage range F device with 1.8 V ≤ Vcc ≤ 5.5 V refer to Table 12 instead of this table. 2. Characterized only, not tested in production. 3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction). DS9194 - Rev 11 page 20/40 M24C16-W M24C16-R M24C16-F DC and AC parameters Table 15. 400 kHz AC characteristics Symbol Alt. Parameter Min. Max. Unit fC fSCL Clock frequency - 400 kHz tCHCL tHIGH Clock pulse width high 600 - tCLCH tLOW Clock pulse width low 1300 - tQL1QL2(1) tF SDA fall time 20(2) 300 tXH1XH2 tR Input signal rise time (3) (3) tXL1XL2 tF Input signal fall time (3) (3) tDXCH tSU:DAT Data in setup time 100 - tCLDX tHD:DAT Data in hold time 0 - 100 - - 900 ns (4) tDH Data out hold time tCLQV(5) tAA Clock low to next data valid (access time) tCHDL tSU:STA Start condition setup time 600 - tDLCL tHD:STA Start condition hold time 600 - tCHDH tSU:STO Stop condition setup time 600 - tDHDL tBUF Time between Stop condition and next Start condition 1300 - tW tWR Write time - 5 ms tNS(1) - Pulse width ignored (input filter on SCL and SDA), single glitch - 100 ns tCLQX 1. Characterized only, not tested in production. 2. With CL = 10 pF. 3. There are no minimum or maximum values for the input signal rise and fall times. It is however recommended by the I²C specification that the input signal rise and fall times are between 20 and 300 ns when fC < 400 kHz. 4. The minimum value for tCLQX (Data out hold time) of the M24xxx devices offers a safe timing to bridge the undefined region of the falling edge SCL. 5. tCLQV is the time (from the falling edge of SCL) required by the SDA bus line to reach either 0.3 VCC or 0.7 VCC, assuming that Rbus x Cbus time constant is within the values specified in Figure 12. DS9194 - Rev 11 page 21/40 M24C16-W M24C16-R M24C16-F DC and AC parameters Table 16. 100 kHz AC characteristics (I2C Standard mode) Symbol Alt. fC fSCL tCHCL Min. Max. Unit Clock frequency - 100 kHz tHIGH Clock pulse width high 4 - tCLCH tLOW Clock pulse width low 4.7 - tXH1XH2 tR Input signal rise time - 1 tXL1XL2 tF Input signal fall time - 300 tQL1QL2(1) tF SDA fall time - 300 tDXCH tSU:DAT Data in setup time 250 - tCLDX tHD:DAT Data in hold time 0 - tCLQX(2) tDH Data out hold time 200 - tCLQV(3) tAA Clock low to next data valid (access time) - 3450 tCHDL(4) tSU:STA Start condition setup time 4.7 - tDLCL tHD:STA Start condition hold time 4 - tCHDH tSU:STO Stop condition setup time 4 - tDHDL tBUF Time between Stop condition and next Start condition 4.7 - tW tWR Write time - 5 ms Pulse width ignored (input filter on SCL and SDA), single glitch - 100 ns (1) tNS - Parameter μs ns μs 1. Characterized only. 2. To avoid spurious Start and Stop conditions, a minimum delay is placed between SCL=1 and the falling or rising edge of SDA. 3. tCLQV is the time (from the falling edge of SCL) required by the SDA bus line to reach either 0.3 VCC or 0.7 VCC, assuming that Rbus x Cbus time constant is within the values specified in Figure 12. 4. For a reStart condition, or following a Write cycle. DS9194 - Rev 11 page 22/40 M24C16-W M24C16-R M24C16-F DC and AC parameters Figure 11. Maximum Rbus vs. bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz Bus line pull-up resistor (kΩ) 100 10 4k R bu s × C bu s= 40 Here Rbus x Cbus = 120 ns 0 The Rbus x Cbus time constant must be below the 400 ns time constant line represented on the left. VCC Rbus ns I²C bus master SCL M24xxx SDA 1 10 30 100 1000 Cbus Bus line capacitor (pF) Figure 12. AC waveforms Start condition Stop condition tXL1XL2 tXH1XH2 tCHCL Start condition tCLCH SCL tDLCL tXL1XL2 SDA In tCHDL tXH1XH2 SDA Input tCLDX tDXCH SDA Change tCHDH Stop condition tDHDL Start condition SCL SDA In tW tCHDH tCHDL Write cycle tCHCL SCL tCLQV SDA Out DS9194 - Rev 11 tCLQX Data valid tQL1QL2 Data valid page 23/40 M24C16-W M24C16-R M24C16-F Package information 9 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at www.st.com. ECOPACK is an ST trademark. For die information concerning the M24C16 delivered in unsawn wafer, please contact your nearest ST Sales Office. 9.1 UFDFPN5 (DFN5) package information UFDFPN5 is a 5-lead, 1.7 × 1.4 mm, 0.55 mm thickness, ultra thin fine pitch dual flat package. Figure 13. UFDFPN5 - Outline D k L Pin 1 Pin 1 b X E E1 Y D1 Top view (marking side) e L1 Bottom view (pads side) A A1 Side view 1. 2. 3. 4. DS9194 - Rev 11 Maximum package warpage is 0.05 mm. Exposed copper is not systematic and can appear partially or totally according to the cross section. Drawing is not to scale. On the bottom side, pin 1 is identified by the specific pad shape and, on the top side, pin 1 is defined from the orientation of the marking. When reading the marking, pin 1 is below the upper left package corner. page 24/40 M24C16-W M24C16-R M24C16-F UFDFPN5 (DFN5) package information Table 17. UFDFPN5 - Mechanical data Symbol inches(1) millimeters Min Typ Max Min Typ Max A 0.500 0.550 0.600 0.0197 0.0217 0.0236 A1 0.000 - 0.050 0.0000 - 0.0020 b(2) 0.175 0.200 0.225 0.0069 0.0079 0.0089 D 1.600 1.700 1.800 0.0630 0.0669 0.0709 D1 1.400 1.500 1.600 0.0551 0.0591 0.0630 E 1.300 1.400 1.500 0.0512 0.0551 0.0591 E1 0.175 0.200 0.225 0.0069 0.0079 0.0089 X - 0.200 - - 0.0079 - Y - 0.200 - - 0.0079 - e - 0.400 - - 0.0157 - L 0.500 0.550 0.600 0.0197 0.0217 0.0236 L1 - 0.100 - - 0.0039 - k - 0.400 - - 0.0157 - 1. Values in inches are converted from mm and rounded to four decimal digits. 2. Dimension b applies to plated terminal and is measured between 0.15 and 0.30mm from the terminal tip. Figure 14. UFDFPN5 - Recommended footprint Pin 1 0.400 0.600 0.200 0.200 0.200 0.200 0.400 1.600 Note: DS9194 - Rev 11 Dimensions are expressed in millimeters. page 25/40 M24C16-W M24C16-R M24C16-F UFDFPN8 (DFN8) package information 9.2 UFDFPN8 (DFN8) package information UFDFPN8 is an 8-lead, 2 × 3 mm, 0.55 mm thickness ultra thin profile fine pitch dual flat package. Figure 15. UFDFPN8 - Outline D N A B A ccc C Pin #1 ID marking E A1 C eee C Seating plane A3 Side view 2x aaa C 1 aaa C 2x 2 Top view D2 e 1 2 L3 Datum A b L1 L L3 Pin #1 ID marking E2 K L e/2 L1 e Terminal tip Detail “A” Even terminal ND-1 x e Bottom view 1. 2. 3. 4. DS9194 - Rev 11 See Detail “A” Maximum package warpage is 0.05 mm. Exposed copper is not systematic and can appear partially or totally according to the cross section. Drawing is not to scale. The central pad (the area E2 by D2 in the above illustration) must be either connected to VSS or left floating (not connected) in the end application. page 26/40 M24C16-W M24C16-R M24C16-F UFDFPN8 (DFN8) package information Table 18. UFDFPN8 - Mechanical data Symbol inches(1) millimeters Min Typ Max Min Typ Max A 0.450 0.550 0.600 0.0177 0.0217 0.0236 A1 0.000 0.020 0.050 0.0000 0.0008 0.0020 b(2) 0.200 0.250 0.300 0.0079 0.0098 0.0118 D 1.900 2.000 2.100 0.0748 0.0787 0.0827 D2 1.200 - 1.600 0.0472 - 0.0630 E 2.900 3.000 3.100 0.1142 0.1181 0.1220 E2 1.200 - 1.600 0.0472 - 0.0630 e - 0.500 - 0.0197 K 0.300 - - 0.0118 - - L 0.300 - 0.500 0.0118 - 0.0197 L1 - - 0.150 - - 0.0059 L3 0.300 - - 0.0118 - - aaa - - 0.150 - - 0.0059 bbb - - 0.100 - - 0.0039 ccc - - 0.100 - - 0.0039 ddd - - 0.050 - - 0.0020 eee(3) - - 0.080 - - 0.0031 1. Values in inches are converted from mm and rounded to four decimal digits. 2. Dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from the terminal tip. 3. Applied for exposed die paddle and terminals. Exclude embedding part of exposed die paddle from measuring. Figure 16. UFDFPN8 - Recommended footprint 1.400 0.500 0.300 0.600 1.200 1.300 1. DS9194 - Rev 11 Dimensions are expressed in millimeters. page 27/40 M24C16-W M24C16-R M24C16-F TSSOP8 package information 9.3 TSSOP8 package information TSSOP8 is an 8-lead thin shrink small outline, 3 x 6.4 mm, 0.65 mm pitch, package. Figure 17. TSSOP8 – Outline D 8 5 c E1 1 E 4 α A1 CP A2 A b 1. L L1 e Drawing is not to scale. Table 19. TSSOP8 – Mechanical data Symbol inches (1) millimeters Min. Typ. Max. Min. Typ. Max. A - - 1.200 - - 0.0472 A1 0.050 - 0.150 0.0020 - 0.0059 A2 0.800 1.000 1.050 0.0315 0.0394 0.0413 b 0.190 - 0.300 0.0075 - 0.0118 c 0.090 - 0.200 0.0035 - 0.0079 CP - - 0.100 - - 0.0039 D 2.900 3.000 3.100 0.1142 0.1181 0.1220 e - 0.650 - - 0.0256 - E 6.200 6.400 6.600 0.2441 0.2520 0.2598 E1 4.300 4.400 4.500 0.1693 0.1732 0.1772 L 0.450 0.600 0.750 0.0177 0.0236 0.0295 L1 - 1.000 - - 0.0394 - α 0° - 8° 0° - 8° 1. Values in inches are converted from mm and rounded to four decimal digits. DS9194 - Rev 11 page 28/40 M24C16-W M24C16-R M24C16-F TSSOP8 package information Figure 18. TSSOP8 – Recommended footprint 2.3 1.0 7.0 0.65 0.35 1. DS9194 - Rev 11 Dimensions are expressed in millimeters. page 29/40 M24C16-W M24C16-R M24C16-F SO8N package information 9.4 SO8N package information SO8N is an 8-lead, 4.9 x 6 mm, plastic small outline, 150 mils body width, package. Figure 19. SO8N – Outline h x 45˚ A2 A c ccc b e 0.25 mm GAUGE PLANE D k 8 E1 E 1 A1 L L1 1. Drawing is not to scale. Table 20. SO8N – Mechanical data Symbol inches (1) millimeters Min. Typ. Max. Min. Typ. Max. A - - 1.750 - - 0.0689 A1 0.100 - 0.250 0.0039 - 0.0098 A2 1.250 - - 0.0492 - - b 0.280 - 0.480 0.0110 - 0.0189 c 0.170 - 0.230 0.0067 - 0.0091 D 4.800 4.900 5.000 0.1890 0.1929 0.1969 E 5.800 6.000 6.200 0.2283 0.2362 0.2441 E1 3.800 3.900 4.000 0.1496 0.1535 0.1575 e - 1.270 - - 0.0500 - h 0.250 - 0.500 0.0098 - 0.0197 k 0° - 8° 0° - 8° L 0.400 - 1.270 0.0157 - 0.0500 L1 - 1.040 - - 0.0409 - ccc - - 0.100 - - 0.0039 1. Values in inches are converted from mm and rounded to four decimal digits. DS9194 - Rev 11 page 30/40 M24C16-W M24C16-R M24C16-F SO8N package information Figure 20. SO8N - Recommended footprint 3.9 6.7 0.6 (x8) 1.27 1. DS9194 - Rev 11 Dimensions are expressed in millimeters. page 31/40 M24C16-W M24C16-R M24C16-F Ordering information 10 Ordering information Table 21. Ordering information scheme Example: M24 C16- W MC 6 T P /12 Device type M24 = I2C serial access EEPROM Device function C16- = 16 Kbit (2 K x 8 bit) Operating voltage W = VCC = 2.5 V to 5.5 V F = VCC = 1.6 V or 1.7 V to 5.5 V R = VCC = 1.8 V to 5.5 V Package (1) MN = SO8 (150 mil width) DW = TSSOP8 (169 mil width) MC = UFDFPN8 (DFN8) MH = UFDFPN5 (DFN5) Device grade 5 = Consumer: device tested with standard test flow over –20 to 85 °C 6 = Industrial: device tested with standard test flow over -40 to 85 °C Option T = Tape and reel packing blank = Tube packing Planting technology P or G = ECOPACK Option /12 = Packing 12 mm tape 1. ECOPACK2 (RoHS compliant and free of brominated, chlorinated and antimony oxide flame retardants). DS9194 - Rev 11 page 32/40 M24C16-W M24C16-R M24C16-F Ordering information Table 22. Ordering information scheme (unsawn wafer) Example: M24 C16 - F T W 20 I /90 Device type(1) M24 = I2C serial access EEPROM Device function C16 = 16 Kbit (2 K x 8 bit) Operating voltage F = VCC = 1.7 V to 5.5 V Process T = F8H Delivery form W =Unsawn wafer Wafer thickness 20 = Non-backlapped wafer 22 = 180 μm backlapped wafer Wafer testing I = Inkless test Device grade 90 = -40 °C to 85 °C 1. For all information concerning the M24C16 delivered in unsawn wafer contact your nearest ST Sales Office. Note: DS9194 - Rev 11 Parts marked as “ES” or “E” are not yet qualified and therefore not approved for use in production. ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity. page 33/40 M24C16-W M24C16-R M24C16-F Revision history Table 23. Document revision history Date Revision Changes Initial release resulting from splitting datasheet M24C16 revision 17 as follows: • M24C16-125 datasheet for automotive products (range 3) • M24C16-W M24C16-R M24C16-F (this datasheet) for standard products range Updated in Section 8: DC and AC parameters: 05-Oct-2012 1 • ESD value in Table 15: Operating conditions (voltage range W) • Extended temperature range in Table 14: Operating conditions (voltage range F) • ICC Standby in Table 32: DC characteristics (M24128-BWvoltage range W, device grade 6) Added dimensions in Table 22: M24C16-FCS5TP/S WLCSP 5 bumps package data and Figure 18: M24C16-FCS5TP/S WLCSP 5 bumps package outline. Reformatted document. Added UFDFPN5 package. 19-Mar-2013 2 Rephrased text in Section 6: Initial delivery state. Renamed Figure 52 and Table 43. Modified note 1 under Table 24. Updated: 10-Jul-2013 3 • Features: cycling performance and data retention • Table 31: Memory cell data retention • Note (2) under Table 14: Absolute maximum ratings. Added Table 20: Cycling performance Replaced “WLCSP” by “M24C16-FCS5TP/S WLCSP” across the document. Added: Table 17: Operating conditions (voltage range F, for devices identified by process letter T) and Table 18: Operating conditions (voltage range F, for all other devices). 09-Oct-2013 4 Updated: • “Single supply voltage” in cover page. • Section 1: Description • Table 33: DC characteristics (voltage range M24128M24128-BR, M24128-DR device grade 6) and Table 35: DC characteristics (M24C32M24C02-F, device grade 6 and grade 5) • Figure 43: AC measurement I/O waveform (third waveform) • Table 70: Ordering information scheme: added note 1 for WLCSP package. Added reference to unsawn wafer availability on: • Cover page, Section 9 • Table 90 • note 2 on Table 31 • 15-Sep-2014 5 Updated Figure 4. Removed figure 5 and table 9 related to revision 4. Updated: DS9194 - Rev 11 • note 1 on Table 29 and Table 31 • ILI parameter on Table 32, Table 33 and Table 35 • Table 24 page 34/40 M24C16-W M24C16-R M24C16-F Date Revision 18-Feb-2015 6 01-Jul-2015 7 18-Mar-2016 8 Changes Removed: WLCSP package reference, tables and figures in all document Updated: Table 54 and Table 70 Updated: Section 6, Table 70 Added note 1 on Table 70 Updated Features, Figure 41: Read mode sequences, Figure 51: UFDFPN5 – 1.7x1.4 mm, 0.55 mm thickness, ultra thin fine pitch dual flat package, no lead - package outline and Table 53: UFDFPN5 - 1.7 × 1.4 mm, 0.55 mm thickness, ultra thin fine pitch dual flat package, no lead - package mechanical data Added reference to DFN8 and DFN5 in: 02-Oct-2017 • cover page figure, Figure 3: UFDFPN5 (DFN5) package connections • Section 9.1: UFDFPN5 (DFN5) package information, Section 9.2: UFDFPN8 (DFN8) package information. 9 Updated Table 9: AC measurement conditions, Table 23: Ordering information scheme. Added Figure 14: UFDFPN5 - 5-lead, 1.7 × 1.4 mm, 0.55 mm thickness, ultra thin fine pitch dual flat package, no lead recommended footprint Updated: 04-Jun-2020 10 • Section Features • Figure 4. Block diagram • Table 4. Absolute maximum ratings, • title of Table 7. Operating conditions (voltage range F) • notes in: Table 10. Cycling performance, Table 11. Memory cell data retention, Table 12. DC characteristics (M24C16-W, device grade 6)Table 13. DC characteristics (M24C16-R device grade 6), Table 14. DC characteristics (M24C16F device grade 6) Removed Package PDIP8 in whole document, Table 8. Operating conditions (voltage range F, for all other devices) Added specification in Wafer thickness feature of Table 22. Ordering information scheme (unsawn wafer) Updated Section Features and Section 1 Description. Added note in Section 5.1.3 Minimizing write delays by polling on ACK. 12-Oct-2020 11 Updated Table 21. Ordering information scheme and Table 22. Ordering information scheme (unsawn wafer). Updated Figure 1. Logic diagram. Minor text edits across the whole document. DS9194 - Rev 11 page 35/40 M24C16-W M24C16-R M24C16-F Contents Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2.1 Serial Clock (SCL). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Serial Data (SDA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 Write Control (WC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.4 VSS (ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.5 Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.5.1 Operating supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.5.2 Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.5.3 Device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.5.4 Power-down conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Device operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5 4.1 Start condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.2 Stop condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.3 Data input. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.4 Acknowledge bit (ACK). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.5 Device addressing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 5.1 5.2 Write operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.1.1 Byte Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.1.2 Page Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1.3 Minimizing Write delays by polling on ACK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.2.1 Random Address Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.2.2 Current Address Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.2.3 Sequential Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 7 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 DS9194 - Rev 11 page 36/40 M24C16-W M24C16-R M24C16-F Contents 8 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 9 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 10 9.1 UFDFPN5 (DFN5) package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 9.2 UFDFPN8 (DFN8) package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 9.3 TSSOP8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 9.4 SO8N package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 DS9194 - Rev 11 page 37/40 M24C16-W M24C16-R M24C16-F List of figures List of figures Figure 1. Figure 2. Figure 3. Figure 4. Logic diagram. . . . . . . . . . . . . . . . . . . 8-pin package connections, top view . . . UFDFPN5 (DFN5) package connections Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. I2C bus protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write mode sequences with WC = 0 (data write enabled) . Write mode sequences with WC = 1 (data write inhibited). Write cycle polling flowchart using ACK . . . . . . . . . . . . . Read mode sequences . . . . . . . . . . . . . . . . . . . . . . . . AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 . 9 10 11 12 17 Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Maximum Rbus vs. bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UFDFPN5 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UFDFPN5 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UFDFPN8 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UFDFPN8 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSSOP8 – Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSSOP8 – Recommended footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SO8N – Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SO8N - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 23 24 25 26 27 28 29 30 31 DS9194 - Rev 11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 3 5 page 38/40 M24C16-W M24C16-R M24C16-F List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Signal names . . . . . . . . . . . . . . . . . . . . . . . . Device select code . . . . . . . . . . . . . . . . . . . . . Address byte . . . . . . . . . . . . . . . . . . . . . . . . . Absolute maximum ratings . . . . . . . . . . . . . . . Operating conditions (voltage range W) . . . . . . Operating conditions (voltage range R) . . . . . . . Operating conditions (voltage range F) . . . . . . . AC measurement conditions . . . . . . . . . . . . . . Input parameters . . . . . . . . . . . . . . . . . . . . . . Cycling performance . . . . . . . . . . . . . . . . . . . Memory cell data retention . . . . . . . . . . . . . . . DC characteristics (M24C16-W, device grade 6) DC characteristics (M24C16-R device grade 6) . DC characteristics (M24C16-F device grade 6) . 400 kHz AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 . 7 . 8 15 16 16 16 16 17 17 17 18 19 20 21 Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. 100 kHz AC characteristics (I2C Standard mode) . UFDFPN5 - Mechanical data . . . . . . . . . . . . . . . UFDFPN8 - Mechanical data . . . . . . . . . . . . . . . TSSOP8 – Mechanical data . . . . . . . . . . . . . . . SO8N – Mechanical data . . . . . . . . . . . . . . . . . Ordering information scheme. . . . . . . . . . . . . . . Ordering information scheme (unsawn wafer) . . . Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 25 27 28 30 32 33 34 DS9194 - Rev 11 page 39/40 M24C16-W M24C16-R M24C16-F IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS9194 - Rev 11 page 40/40
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