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M74HC51RM13TR

M74HC51RM13TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOIC14_150MIL

  • 描述:

    IC INVERTER GATE DUAL 14-SOIC

  • 数据手册
  • 价格&库存
M74HC51RM13TR 数据手册
M74HC51 DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 11ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 51 DESCRIPTION The M74HC51 is an high speed CMOS DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE fabricated with silicon gate C2MOS technology. It contains a 2-WIDE 2-INPUT AND/OR INVERT GATE and a 2-WIDE 3-INPUT AND/OR INVERT GATE. ) (s t c u d o r DIP PACKAGE TUBE t e l o s b O TSSOP u d o r P e ORDER CODES DIP SOP TSSOP ) s ( ct SOP M74HC51B1R M74HC51M1R T&R M74HC51RM13TR M74HC51TTR The internal circuit is composed of 3 stages (2 INPUT) or 5 stages (3 INPUT) including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage. P e t e l o s b O PIN CONNECTION AND IEC LOGIC SYMBOLS August 2001 1/9 M74HC51 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 1, 12, 13, 9, 10, 11 2, 3, 4, 5 8, 6 7 14 NAME AND FUNCTION 1A to 1F Data Inputs 2A to 2D 1Y to 2Y GND VCC Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE 1A 1B 1C 1D 1E (s) 1F 1Y ct H X H H X X X X H H ALL OTHER COMBINATIONS r P e TRUTH TABLE t e l o 2A H X s b O u d o 2B 2C X H L L H 2D 2Y H X X X H H ALL OTHER COMBINATIONS L L H X : Don’t Care ) (s ABSOLUTE MAXIMUM RATINGS t c u Symbol VCC Parameter Supply Voltage Value Unit -0.5 to +7 V -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 V DC Input Diode Current ± 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA d o r VI DC Input Voltage VO DC Output Voltage IIK P e t e l o ICC or IGND DC VCC or Ground Current s b O PD Power Dissipation Tstg Storage Temperature TL Lead Temperature (10 sec) V ± 50 mA 500(*) mW -65 to +150 °C 300 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/ °C from 65°C to 85°C 2/9 M74HC51 RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Value Supply Voltage VI Input Voltage VO Output Voltage Top Operating Temperature Input Rise and Fall Time tr, tf Unit 2 to 6 V 0 to VCC V 0 to VCC V -55 to 125 °C VCC = 2.0V 0 to 1000 ns VCC = 4.5V 0 to 500 ns VCC = 6.0V 0 to 400 ns ) s ( ct DC SPECIFICATIONS Test Condition Symbol VIH Parameter High Level Input Voltage High Level Output Voltage VOH e t e l so b O II ICC Input Leakage Current Quiescent Supply Current O ) Min. Min. r P e Max. let o s b Max. 1.5 3.15 4.2 0.5 1.35 1.8 0.5 1.35 1.8 1.9 1.9 4.5 IO=-20 µA 4.4 4.5 4.4 4.4 IO=-20 µA 5.9 6.0 5.9 5.9 t(s V 0.5 1.35 1.8 2.0 Unit Max. 1.5 3.15 4.2 1.9 c u d o r P Typ. -55 to 125°C IO=-20 µA V V IO=-4.0 mA 4.18 4.31 4.13 4.10 6.0 IO=-5.2 mA 5.68 5.8 5.63 5.60 2.0 IO=20 µA 0.0 0.1 0.1 0.1 4.5 IO=20 µA 0.0 0.1 0.1 0.1 6.0 IO=20 µA 0.0 0.1 0.1 0.1 4.5 IO=4.0 mA 0.17 0.26 0.33 0.40 6.0 IO=5.2 mA 0.18 0.26 0.33 0.40 6.0 VI = VCC or GND ± 0.1 ±1 ±1 µA 6.0 VI = VCC or GND 1 10 20 µA 4.5 Low Level Output Voltage 1.5 3.15 4.2 -40 to 85°C 2.0 6.0 VOL Min. 2.0 4.5 6.0 2.0 4.5 6.0 Low Level Input Voltage VIL TA = 25°C VCC (V) u d o Value V 3/9 M74HC51 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time Value TA = 25°C VCC (V) Min. 2.0 4.5 6.0 2.0 4.5 6.0 Typ. Max. 30 8 7 39 13 11 75 15 13 100 20 17 -40 to 85°C -55 to 125°C Min. Min. Max. 95 19 16 125 25 21 Symbol Parameter TA = 25°C VCC (V) CIN Input Capacitance 5.0 CPD Power Dissipation Capacitance (note 1) 5.0 Min. Typ. Max. 5 10 so e t e l 32 b O Pr -40 to 85°C -55 to 125°C Min. Min. Max. 10 ns ns ) s ( ct u d o Value Max. 110 22 19 150 30 26 CAPACITIVE CHARACTERISTICS Test Condition Unit Unit Max. 10 pF pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC ) (s TEST CIRCUIT t c u d o r P e t e l o s b O CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) 4/9 M74HC51 WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 5/9 M74HC51 Plastic DIP-14 MECHANICAL DATA mm. inch DIM. MIN. a1 0.51 B 1.39 TYP MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D ) s ( ct 20 E 8.5 e 2.54 e3 15.24 u d o 0.335 7.1 I 5.1 1.27 s ( t c 2.54 e t e ol bs O ) 3.3 Z Pr 0.100 F L 0.787 0.600 0.280 0.201 0.130 0.050 0.100 u d o r P e t e l o s b O P001A 6/9 M74HC51 SO-14 MECHANICAL DATA mm. DIM. MIN. TYP A inch MAX. MIN. TYP. a1 1.75 MAX. 0.1 0.068 0.2 a2 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 b1 0.19 0.25 0.007 C 0.5 0.018 ) s ( ct 0.010 0.019 c1 45° (typ.) D 8.55 8.75 0.336 E 5.8 6.2 0.228 e 1.27 e3 7.62 F 3.8 4.0 4.6 5.3 L 0.5 ) (s e t e l so b O 1.27 S Pr 0.344 0.244 0.050 G M u d o 0.68 0.300 0.149 0.157 0.181 0.208 0.019 0.050 0.026 8° (max.) t c u d o r P e t e l o s b O PO13G 7/9 M74HC51 TSSOP14 MECHANICAL DATA mm. inch DIM. MIN. TYP A MAX. MIN. TYP. MAX. 1.2 A1 0.05 A2 0.8 b 0.047 0.15 0.002 0.004 0.006 1.05 0.031 0.039 0.041 0.19 0.30 0.007 c 0.09 0.20 0.004 D 4.9 5 5.1 0.193 E 6.2 6.4 6.6 0.244 E1 4.3 4.4 4.48 1 e bs 0.65 BSC K 0° L 0.45 let o s b 0.60 s ( t c 0.75 du ro P e 0.0089 0.197 0.201 0.252 0.260 0.173 0.176 0.0256 BSC 0° 8° 0.018 0.024 0.030 u d o r P e A O ) 8° 0.012 t e l o 0.169 ) s ( ct A2 A1 b O e K c L E D E1 PIN 1 IDENTIFICATION 1 0080337D 8/9 M74HC51 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 9/9
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