MSC83305

MSC83305 RF & MICROWAVE TRANSISTORS G ENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC® PACKAGE POUT = 4.5 W MIN. WITH 4.5 dB GAIN @ 3.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE BRANDING 83305 MSC83305 PIN CONNECTION DESCRIPTION The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83305 was designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 2 5 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 50˚C) 17.6 700 30 200 − 65 to +200 W mA V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 8.5 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC83305 E LECTRICAL SPECIFICATIONS ( T case = 2 5 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 500mA 45 3.5 45 — 30 — — — — — — — — 0.5 300 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP COB f = 3.0 GHz f = 3.0 GHz f = 3.0 GHz f = 1 MHz PIN = 1.59 W PIN = 1.59 W PIN = 1.59 W VCB = 28 V VCC = 28 V VCC = 28 V VCC = 28 V 4.5 30 4.5 — 5.0 33 5.0 — — — — 7.5 W % dB pF TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY PERCENT POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE COLLECTOR EFFICIENCY vs FREQUENCY 2/5 MSC83305 IMPEDANCE DATA T YPICAL INPUT IMPEDANCE ZIN FREQ. 1.0 GHz 1.7 GHz 2.0 GHz 2.3 GHz 2.7 GHz 3.0 GHz ZIN (Ω) 1.7 + j 7.2 2.0 + j 11.2 2.4 + j 14.0 3.6 + j 17.4 6.0 + j 21.0 9.5 + j 24.0 ZCL (Ω) 9.5 + j 15.5 4.2 + j 6.7 3.5 + j 2.5 3.1 − j 1.2 3.0 − j 3.8 3.0 − j 7.2 POUT = Saturated VCC = 28V Normalized to 50 ohms TYPICAL COLLECTOR LOAD IMPEDANCE ZCL 3/5 MSC83305 TEST CIRCUIT Ref.: Dwg. No. C125562 All dimensions are in inches. Frequency 3.0 GHz RF Amplifier Power Output Test P ACKAGE MECHANICAL DATA 4/5 MSC83305 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5