®
P0130AA
0.8A SCRs
SENSITIVE
MAIN FEATURES:
A
Symbol IT(RMS) VDRM/VRRM IGT
Value 0.8 100 1
Unit A V µA
G K
DESCRIPTION The P0130AA is a gate sensitive SCR, packaged in TO-92, used in conjunction of a TN22 A.S.D™ and of a resistor in electronic starter for fluorescent tubelamps.
TO-92
ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C tp = 10 ms I ²t dI/dt IGM PG(AV) Tstg Tj I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 10ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C 7 0.24 50 1 0.1 - 40 to + 150 - 40 to + 125 A2S A/µs A W °C Tl = 55°C Tl = 55°C Value 0.8 0.5 8 A Unit A A
May 2002 - Ed: 2
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P0130AA
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol IGT VD = 12 V VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ IRG = 10 µA IT = 50 mA IG = 1 mA ITM = 1.6 A RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C tp = 380 µs Tj = 125°C RL = 140 Ω Test Conditions MIN. MAX. MAX. MIN. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. MAX. P0130AA 0.1 1 0.8 0.1 8 5 6 25 1.95 0.95 600 1 100 µA V V V mA mA V/µs V V mΩ µA Unit
VD = 67 % VDRM
Threshold voltage Dynamic resistance VDRM = VRRM RGK = 1 kΩ
THERMAL RESISTANCES
Symbol Rth(j-i) Rth(j-a) Junction to case (DC) Junction to ambient (DC) Parameter Value 80 150 Unit °C/W °C/W
PRODUCT SELECTOR
Part Number P0130AA Voltage 100V Sensitivity 1 µA Package TO-92
2/5
P0130AA
ORDERING INFORMATION
P 01 30
SENSITIVE SCR SERIES CURRENT: 0.8A
AA
VOLTAGE: A: 100V
Blank
1EA3
PACKING MODE: 1EA3: TO-92 bulk 2AL3: TO-92 ammopack
PACKAGE: A: TO-92
SENSITIVITY: 30: 1µA
OTHER INFORMATION
Part Number P0130AA 1EA3 P0130AA 2AL3 Marking P0130AA P0130AA Weight 0.2 g 0.2 g Base Quantity 2500 2000 Packing mode Bulk Ammopack
Note: xx = sensitivity, y = voltage
Fig. 1: Maximum average power dissipation versus average on-state current.
P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0
Fig. 2-1: Average and D.C. on-state current versus lead temperature.
IT(av)(A)
0.1
0.2
0.3
0.4
0.5
0.6
1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Tlead or Ttab (°C)
0 25 50 75 100 125
Fig. 2-2: Average and D.C. on-state current versus ambient temperature.
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration.
K = [Zth(j-a)/Rth(j-a)]
1.00
IT(av)(A)
0.10
Tamb(°C)
0 25 50 75 100 125
0.01 1E-2 1E-1
tp(s)
1E+0 1E+1 1E+2 5E+2
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P0130AA
Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C
Fig. 5:Relative variation of holding current versus gate-cathode resistance (typical values).
IH[Rgk]/IH[Rgk=1kΩ]
6 5 4 3 2 1
Tj(°C)
0 -40
Rgk(kΩ)
-20
0
20
40
60
80
100
120
140
Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values).
dV/dt[Rgk] / dV/dt[Rgk=1kΩ]
Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt[Rgk=1kΩ]
10.0
10 8 6
1.0 4 2
Rgk(kΩ) Cgk(nF)
0.1 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0
1
2
3
4
5
6
7
Fig. 8: Surge peak on-state current versus number of cycles.
Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t.
ITSM(A), I2t(A2s)
ITSM(A) 8 7
tp=10ms
100.0
6 5 4 3 2 1 0 1 10
Repetitive Tamb=25°C Non repetitive Tj initial=25°C
Onecycle
10.0
1.0 Numberofcycles 100 1000 0.1 0.01 0.10
tp(ms)
1.00
10.00
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P0130AA
Fig. 10: On-state characteristics (maximum values).
ITM(A)
1E+1
Ω
1E+0
1E-1
VTM(V)
1E-2 0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
PACKAGE MECHANICAL DATA TO-92 (Plastic)
DIMENSIONS
A a B C
REF.
Millimeters Min. Typ. 1.35 4.70 2.54 4.40 12.70 3.70 0.50 0.173 0.500 Max. Min.
Inches Typ. 0.053 0.185 0.100 Max.
F
D
E
A B C D E F a
0.146 0.019
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States http://www.st.com
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