P6KE15CA

® P6KE6V8A/440A P6KE6V8CA/440CA TRANSILTM FEATURES PEAK PULSE POWER : 600 W (10/1000µs) BREAKDOWN VOLTAGE RANGE : From 6.8V to 440 V. UNI AND BIDIRECTIONAL TYPES. LOW CLAMPING FACTOR. FAST RESPONSE TIME. UL RECOGNIZED. DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. CB417 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol PPP P IFSM Tstg Tj TL Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current For Unidirectional types. Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s at 5mm from case Tj initial =Tamb Tamb = 75°C Tj initial =Tamb tp =10 ms Value 600 5 100 - 65 to + 175 175 230 Unit W W A °C °C °C Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction-leads Junction to ambient on printed circuit. Llead = 10 mm Parameter Value 20 75 Unit °C/W °C/W November 1998 - Ed: 2A 1/6 P6KExx ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM VBR VCL IRM IPP Parameter I IF Stand-off voltage. Breakdown voltage. Clamping voltage. Leakage current @ VRM. Surge current. Voltage temperature coefficient. Forward Voltage drop. TYPES IRM @ VRM max min VBR @ IR VCL @ IPP max max 10/1000µs 8/20µs mA 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 V 10.5 11.3 14.5 16.7 21.2 25.2 30.6 33.2 37.5 41.5 45.7 49.9 53.9 64.8 77 92 113 137 165 207 246 274 A 57 53 41 36 28 24 20 18 16 14.5 13.1 12 11.1 9.3 7.8 6.5 5.3 4.4 3.6 2.9 2.4 2.2 V 13.4 14.5 18.6 21.7 27.2 32.5 39.3 42.8 48.3 53.5 59 64.3 69.7 84 100 121 146 178 212 265 317 353 A 298 276 215 184 147 123 102 93 83 75 68 62 57 48 40 33 27 22.5 19 15 12.6 11.3 VCL @ IPP αT max note3 10-4/°C 5.7 6.1 7.5 7.8 8.4 8.8 9.2 9.4 9.6 9.7 9.8 9.9 10.0 10.1 10.3 10.4 10.5 10.6 10.7 10.8 10.8 10.8 C typ note4 pF 4000 3700 2800 2300 1900 1600 1350 1250 1150 1075 1000 950 900 800 700 625 550 500 450 400 360 350 I PP VCL VBR V RM VF I RM V αT VF nom max note2 V 6.8 7.5 10 12 15 18 22 24 27 30 33 36 39 47 56 68 82 100 120 150 180 200 V 7.14 7.88 10.5 12.6 15.8 18.9 23.1 25.2 28.4 31.5 24.7 37.8 41.0 49.4 58.8 71.4 86.1 105 126 158 189 210 Unidirectional P6KE6V8A P6KE7V5A P6KE10A P6KE12A P6KE15A P6KE18A P6KE22A P6KE24A P6KE27A P6KE30A P6KE33A P6KE36A P6KE39A P6KE47A P6KE56A P6KE68A P6KE82A P6KE100A P6KE120A P6KE150A P6KE180A P6KE200A Bidirectional P6KE6.8CA P6KE7.5CA P6KE10CA P6KE12CA P6KE15CA P6KE18CA P6KE22CA P6KE24CA P6KE27CA P6KE30CA P6KE33CA P6KE36CA P6KE39CA P6KE47CA P6KE56CA P6KE68CA P6KE82CA P6KE100CA P6KE120CA P6KE150CA P6KE180CA P6KE200CA µA 1000 500 10 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 V 5.8 6.4 8.55 V 6.45 7.13 9.5 10.2 11.4 12.8 14.3 15.3 17.1 18.8 20.9 20.5 22.8 23.1 28.7 25.6 28.5 28.2 31.4 30.8 34.2 33.3 37.1 40.2 44.7 47.8 53.2 58.1 64.6 70.1 77.9 85.5 95.0 102 128 154 171 114 143 171 190 2/6 P6KExx TYPES IRM @ VRM max VBR @ IR nom max note2 V 220 250 300 350 400 440 V 231 263 315 368 420 462 mA 1 1 1 1 1 1 VCL @ IPP max 10/1000µs V 328 344 414 482 548 603 A 2 2 1.6 1.6 1.3 1.3 VCL @ IPP max 8/20µs V 388 442 529 618 706 776 A 10.3 9 7.6 6.5 5.7 5.2 αT max note3 10-4/°C 10.8 11 11 11 11 11 C typ note4 pF 330 310 290 270 360 350 min Unidirectional P6KE220A P6KE250A P6KE300A P6KE350A P6KE400A P6KE440A Bidirectional P6KE220CA P6KE250CA P6KE300CA P6KE350CA P6KE400CA P6KE440CA µA 1 1 1 1 1 1 V 188 213 256 299 342 376 V 209 237 285 332 380 418 Fig 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board). % IPP 100 10 s PULSE WAVEFORM 10/1000 s 50 0 1000 s t Note 2 : Note 3 : Note 4 Pulse test : tp < 50 ms. ∆VBR = αT * (Ta - 25) * V BR(25°C). VR = 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2. 3/6 P6KExx Fig. 2 : Peak pulse power versus exponential pulse duration. Ppp (W) 0 .001 0.01 0 .1 1 10 100 Fig. 3 : Clamping voltage versus peak pulse current. exponential waveform : t p = 20 µs________ t p = 1 ms------------t p =10 ms ............... Note : The curves of the figure 3 are specified for a junction temperature of 25 °C before surge. The given results may be extrapolated for other junction temperatures by using the following formula : ∆V (BR) = αT (V(BR)) * [Ta -25] * V (BR). For intermediate voltages, extrapolate the given results. 4/6 P6KExx Fig. 4a : Capacitance versus reverse applied voltage for unidirectional types (typical values). Fig. 4b : Capacitance versus reverse applied voltage for bidirectional types (typical values). Fig. 5 : Peak forward voltage drop versus peak forward current (typical values for unidirectional types). Note : multiply by 2 for units with VBR > 220 V. Fig. 6 : Transient thermal impedance junction-ambient versus pulse duration (For FR4 PC Board with L lead = 10mm). Fig. 7 : Relative variation of leakage current versus junction temperature. 5/6 P6KExx ORDER CODE P6 KE 100 600 W BREAKDOWN VOLTAGE BIDIRECTIONAL C A RL PACKAGING: = Ammopack tape RL = Tape and reel. MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only). PACKAGE MECHANICAL DATA CB417 (Plastic) DIMENSIONS REF. C A C Millimetres Min. Max. 8.89 3.683 25.4 1.092 Inches Min. Max. 0.350 0.145 1.000 0.043 / OB A B OD / OD / C D Packaging : standard packaging is in tape and reel. Weight = 0.65 g. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 6/6