PD57070S-E

PD57070-E PD57070S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 70 W with 14.7dB gain @945 MHz/28 V ■ New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). PowerSO-10RF (straight lead) Figure 1. Pin connection Source Drain Gate Table 1. June 2010 Device summary Order code Package Packing PD57070-E PowerSO-10RF (formed lead) Tube PD57070S-E PowerSO-10RF (straight lead) Tube PD57070TR-E PowerSO-10RF (formed lead) Tape and reel PD57070STR-E PowerSO-10RF (straight lead) Tape and reel Doc ID 12528 Rev 2 1/22 www.st.com 22 Contents PD57070-E, PD57070S-E Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 Doc ID 12528 Rev 2 PD57070-E, PD57070S-E Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25°C) Symbol Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage ± 20 V Drain Current 7 A Power Dissipation (@ Tc = 70°C) 95 W Max. Operating Junction Temperature 165 °C -65 to +150 °C Value Unit 1.0 °C/W ID PDISS TJ TSTG 1.2 Parameter Storage Temperature Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Doc ID 12528 Rev 2 3/22 Electrical characteristics 2 PD57070-E, PD57070S-E Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Static Symbol 2.2 Typ Max Unit VGS = 0 IDS = 1 mA IDSS VGS = 0 VDS = 28 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA VGS(Q) VDS = 28 V ID = 100 mA 5.0 V VDS(ON) VGS = 10 V ID = 3 A 0.95 V GFS VDS = 10 V ID = 3 A CISS VGS = 0 VDS = 28 V f = 1 MHz 91 pF COSS VGS = 0 VDS = 28 V f = 1 MHz 58 pF CRSS VGS = 0 VDS = 28 V f = 1 MHz 3.8 pF 65 V 2.0 0.8 2.5 mho Dynamic Symbol Dynamic Test conditions Min Pout VDD = 28 V IDQ = 250 mA f = 945 MHz 70 GP VDD = 28 V IDQ = 250 mA POUT = 70 W f = 945 MHz 13 hD VDD = 28 V IDQ = 250 mA POUT = 70 W f = 945 MHz Load VDD = 28 V IDQ = 250 mA mismatch All phase angles POUT = 70 W f = 945 MHz 5:1 Typ Max Unit W 14.7 dB 50 % VSWR Moisture sensitivity level Table 6. 4/22 Min VDSS(BR) Table 5. 2.3 Test conditions Moisture sensitivity level Test methodology Rating J-STD-020B MSL 3 Doc ID 12528 Rev 2 PD57070-E, PD57070S-E 3 Impedances Impedances Figure 2. Current conventions Table 7. Impedance data (PD57070S) Freq. (MHz) ZIN (Ω) ZDL(Ω) 900 0.37 + j 0.60 1.7 - j 0.50 920 0.35 + j 0.60 1.6 - j 0.30 940 0.55 + j 0.40 1.5 - j 0.21 960 0.42 + j 0.30 1.4 - j 0.18 980 0.20 + j 0.20 1.2 - j 0.15 Doc ID 12528 Rev 2 5/22 Typical performance PD57070-E, PD57070S-E 4 Typical performance Figure 3. Capacitance vs supply voltage Figure 4. 1000 Drain current vs gate source voltage 8 Vds = 10 V 7 6 Cis s 100 5 Id (A) C (pF) Coss 4 3 10 2 Crss f = 1 MHz 1 1 0 0 4 8 12 16 20 24 28 1 2 3 Vdd (V) Figure 5. 4 5 6 Vgs (V) Gate-source voltage vs case temperature Figure 6. 1.02 Output power vs input power 90 ID = 6 A 80 1.01 ID = 5 A 925 MHz 60 1 ID = 4 A Pout (W) Vgs (normalized) 890 MHz 70 0.99 ID = 3 A 50 960 MHz 40 945 MHz 30 20 0.98 Vdd = 28 V Idq = 250 m A 10 ID = 2 A 0.97 -25 0 25 50 Tc (°C ) 6/22 75 100 0 0 1 2 Pin (W ) Doc ID 12528 Rev 2 3 4 PD57070-E, PD57070S-E Figure 7. Typical performance Power gain vs output power Figure 8. 18 Efficiency vs output power 60 945, 960 MHz 945 MHz 16 925 MHz 50 890 MHz 890 MHz 40 960 MHz 14 ηd (%) Gp (dB) 925 MHz 30 12 20 10 10 Vdd = 28 V Idq = 250 m A Vdd = 28 V Idq = 250 m A 8 0 20 40 60 80 0 100 0 20 40 Pout (W ) Figure 9. 60 80 100 Pout (W ) Input return loss vs output power Figure 10. Output power vs gate-source voltage 0 100 90 -5 80 960 MHz 70 945 MHz 890 MHz 60 925 MHz Pout (W) Rl (dB) -10 -15 925 MHz 50 960 MHz 40 890 MHz 945 MHz -20 30 20 -25 Vdd = 28 V Idq = 250 m A Vdd = 28 V Idq = 250 m A Pin = 2.8 W 10 -30 0 0 20 40 60 80 100 0 Pout (W ) 1 2 3 4 5 Vgs (V) Doc ID 12528 Rev 2 7/22 Typical performance PD57070-E, PD57070S-E Figure 11. Output power vs bias current Figure 12. Efficiency vs bias current 100 60 960 MHz 890, 925 MHz 50 945 MHz 80 925 MHz 890 MHz 960 MHz 945 MHz 40 ηd (%) Pout (W) 60 30 40 20 Vdd = 28 V Pin = 2.8 W 20 Vdd = 28 V Pin = 2.8 W 10 0 0 0 500 1000 1500 2000 2500 0 500 1000 Idq (m A) 1500 2000 2500 Idq (m A) Figure 13. Output power vs supply voltage Figure 14. Efficiency vs supply voltage 80 60 70 960 MHz 50 945 MHz 60 925, 945 MHz 40 890 MHz 890,925 MHz 40 ηd (%) Pout (W) 50 960 MHz 30 30 20 20 Idq = 250 m A Pin = 2.8 W 10 10 Idq = 250 m A Pin = 2.8 W 0 12 14 16 18 20 22 24 26 28 30 0 12 Vdd (V) 8/22 14 16 18 20 22 Vdd (V) Doc ID 12528 Rev 2 24 26 28 30 PD57070-E, PD57070S-E 5 Test circuit Test circuit Figure 15. Test circuit schematic =* *   5) , 1 Note: =' '   5) 2