S2000AF
High voltage NPN Power transistor for standard Definition CRT display
Preliminary Data
Features
■ ■ ■ ■ ■ ■ ■
State-of-the-art technology: – Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tigh hFE range at operating collector current High ruggedness Fully insulated power package U.L. compliant In compliance with the 2002/93/EC European directive
1 2 3
ISOWATT218FX
Applications
■ ■
Internal schematic diagram
Horizontal deflection output for CRT TV Switch mode power supplies for CRT TV
Description
The S2000AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage.
Order codes
Part Number S2000AF Marking S2000AF Package ISOWATT218FX Packaging Tube
March 2007
Rev 1
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Electrical ratings
S2000AF
1
Electrical ratings
Table 1.
Symbol VCES VCEO VEBO IC ICM IB PTOT Vins Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation at Tc = 25°C Insulation withstand voltage (RMS) from all three leads to external heatsink Storage temperature Max. operating junction temperature Value 1500 700 9 8 15 4 50 2500 -65 to 150 °C 150 Unit V V V A A A W V
Table 2.
Symbol
Thermal data
Parameter Value 2.5 Unit °C/W
Rthj-case Thermal resistance junction-case _______________max
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S2000AF
Electrical characteristics
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified) Table 3.
Symbol ICES IEBO
Electrical characteristics
Parameter Collector cut-off current (VBE =0) Emitter cut-off current (IC =0) Test conditions VCE = 1500V VCE = 1500V; VEB = 9V TC= 125°C Min. Typ. Max. 0.2 2 1 Unit mA mA mA
Collector-emitter VCEO(sus) (1) sustaining voltage (IC =0) VCE(sat) (1) VBE(sat) (1) hFE (1) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Inductive load Storage time Fall time
IC = 100mA IC = 4.5A IC = 4.5A IC = 4.5A IC = 1A IC = 4.5A IC = 4.5A LBB(off) = 4.5µH IB = 2A IB = 1A IB = 1A VCE = 5V VCE = 5V IB(on) = 0.5A
700
V
1 5 1.2 10 4.5 30 9
V V
ts tf
VBE(off) = -2.7V fh = 16KHz
2.5 0.2
µs µs
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
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Electrical characteristics
S2000AF
2.1
Test circuits
Figure 1. Power losses and inductive load switching
Figure 2.
Reverse biased safe operating area
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S2000AF
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
S2000AF
ISOWATT218FX MECHANICAL DATA
DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia
MIN. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 15.30 9 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40
mm. TYP
MAX. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80
5.45
7627132 B
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S2000AF
Revision history
4
Revision history
Table 4.
Date 02-Mar-2007
Revision history
Revision 1 Initial release. Changes
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S2000AF
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