SD1726

SD1726 (THA15) RF & MICROWAVE TRANSISTORS H F SSB APPLICATIONS . . . . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 150 W PEP MIN. WITH 14 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1726 BRANDING THA15 PIN CONNECTION DESCRIPTION The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 10 233 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 0.75 °C/W 1/7 SD1726 (THA15) E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO I CEO ICES hFE DYNAMIC Symbol IC = 100mA IC = 100mA IC = 100mA IE = 10mA VCE = 30V VCE = 60V VCE = 6V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 1.4A 110 110 55 4.0 — — 18 — — — — — — — — — — — 5 5 43.5 V V V V mA mA — Test Conditions Value Min. Typ. Max. Unit POUT G P* IMD* η c* COB Note: P OUT * f1 f = 30 MHz POUT = 150 WPEP POUT = 150 WPEP POUT = 150 WPEP f = 1 MHz = 30 W PEP, G P VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V = 14 dB, IMD ICQ = 100mA ICQ = 100mA ICQ = 100mA ICQ = 100mA 150 14 — 37 — — — — — — — — −30 — 220 W dB dBc % pF The SD1726 is al so usabl e in Class A at 40 V. Typical performance is: = 30.00 MHz; f2 = = − 40dBc 30. 001 MHz 2/7 SD1726 (THA15) T YPICAL PERFORMANCE INTERMODULATION DISTORTION vs POWER OUTPUT PEP POWER OUTPUT PEP vs POWER INPUT COLLECTOR EFFICIENCY vs POWER OUTPUT PEP 3/7 SD1726 (THA15) TYPICAL PERFORMANCE (cont’d) POWER GAIN vs FREQUENCY POWER GAIN vs POWER OUTPUT PEP SAFE OPERATING AREA 4/7 SD1726 (THA15) I MPEDANCE DATA TYPICAL INPUT IMPEDANCE BIAS CRCUIT 5/7 SD1726 (THA15) TEST CIRCUIT - CLASS AB - 30 MHz C1 C2 C3 C4 C5, C6 C7 C8, C12 C9, C11 C15 C10 C13 C14 : : : : : : : : : : : Arco 427 Arco 4611 Arco 4615 220pF Arco 4215 Arco 426 100nF 63V 1nF 470µF 40V 220µF 63V 10nF L1 : L2 : L3 : L4 : L5 : L6, L7 L8 : R 5 Turns Diameter 8mm, 1.3mm Wire, Length 15mm Hair Pin Copper Foil 20 x 5mm, 0.2mm Thick 1 Turn Diameter 10mm, 1.3mm Wire, Length 8mm 6 Turns Diameter 8mm, 1.3mm Wire, Length 25mm 4 Turns Diameter 12mm, 2mm Wire, Length 25mm Choke : 0.6Ω MOUNTING CIRCUIT - CLASS AB - 30MHz 6/7 SD1726 (THA15) P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0174 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 7/7