SD1895-3

SD1895-03 RF & MICROWAVE TRANSISTORS 1 .6 GHz SATCOM APPLICATIONS . . . . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE P OUT = 15 W MIN. WITH 9.2 dB GAIN .250 x .320 2LFL (M170) epoxy sealed ORDER CODE SD1895-03 BRANDING SD1895-3 PIN CONNECTION DESCRIPTION The SD1895-03 is a 28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 45 15 3.0 3.0 37.2 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) July 1993 Junction-Case Thermal Resistance 4.7 °C/W 1/4 SD1895-03 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO hFE IC = 5 mA IC = 5 mA IE = 5 mA VCE = 5 V IE = 0 mA IB = 0 mA IC = 0 mA IC = 1 A 45 12 3.0 15 — — — — — — — 150 V V V — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP ηc f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz PIN = 2.4 W PIN = 2.4 W PIN = 2.4 W VCE = 28 V VCE = 28 V VCE = 28 V 20 9.2 48 — — — — — — W dB % TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT IMPEDANCE DATA FREQ. 1.65 GHz ZIN (Ω) 17.0 + j 18.0 ZCL (Ω) 3.5 − j 2.0 2/4 SD1895-03 T EST CIRCUIT C1, C2 : 0.4 - 2.5pF #27283 Johanson Trimmer C3 : 100pF ATC 100A101KCA150 Chip Capacitor C4 : 15,000pF EMI Filter Murata/Erie #9900-381-6004 L1, L2 : 4 Turns, #28 AWG. .080” I.D. 3/4 SD1895-03 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0170 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4