SMA661ASTR

SMA661AS Fully integrated GPS LNA IC Features ■ Power down function ■ Integrated matching networks ■ Low noise figure 1.15 dB @ 1.575 GHz ■ High gain 18 dB @ 1.575 GHz ■ High linearity (IIP3 = +3 dBm) ■ Temperature compensated ■ Unconditionally stable ■ ESD protection (HBM ± 2 kV) ■ 70 GHz Silicon Germanium technology SOT666 (1.65 x 1.2 x 0.57 mm) Applications ■ GPS Description The SMA661AS is the first low-noise amplifier with integrated matching networks and embedded power-down function. The chip, which requires only one external input capacitor, drastically reduces the application bill of materials and the PCB area, resulting in an ideal solution for compact and cost-effective GPS LNA. Table 1. The SMA661AS, using the ST's leading-edge 70 GHz SiGe BiCMOS technology, achieves excellent RF performance at the GPS frequency of 1.575 GHz, in terms of power gain, noise Figure and linearity with a current consumption of 8.5 mA. The device is unconditionally stable and ESD protected. All these features are steady over the operating temperature range of -40 oC to +85 oC. It's housed in ultra-miniature SOT666 plastic package. Device summary Order code Marking Package Packing SMA661ASTR 661 SOT666 Tape and reel September 2013 Rev 6 1/14 www.st.com 14 Contents SMA661AS Contents 1 Pins description and circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Evaluation board description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Package and packing informations . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 2/14 5.1 Package informations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.2 Packing informations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 SMA661AS 1 Pins description and circuit schematic Pins description and circuit schematic Table 2. Pins description Figure 1. Pin # Pin name 1 RF IN 2 GND 3 PD 4 RF OUT 5 GND 6 VCC Pin connection 1 6 Top View Figure 2. 2 5 3 4 Application circuit schematic V C C (6 ) R F inp ut C1 R F IN (1) PD (3 ) R F O U T (4) R F O utpu t S M A6 A 6 6 1 AS GND (2,5 ) 3/14 Electrical specifications SMA661AS 2 Electrical specifications 2.1 Absolute maximum ratings Table 3. Absolute maximum ratings Symbol Vcc Supply voltage Tstg Storage temperature Ta 2.2 Parameter Conditions Operating ambient temperature Value Unit 3.3 V -60 to +150 o -40 to +85 o C C VESD Electrostatic discharge HBM (ALL PINs) ± 2000 V VESD Electrostatic discharge MM (ALL PINs) ± 200 V Electrical characteristics (Ta = +25 °C, VCC = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13 at pin level) Table 4. Symbol f Electrical characteristics Parameters Vcc Supply voltage Icc Current consumption IPD Power down mode current consumption Gp Typ. Max. 1575 2.4 2.7 Unit MHz 3 V 8.5 mA 10 nA Power gain 18 dB NF Noise figure 1.15 dB IIP2 Input IP2 f1 = 849 MHz, f2 = 2424 MHz, Pin = -30 dBm 0.5 dBm IIP3 Input IP3 f1 = 1574.5 MHz, f2 = 1575.5 MHz, Pin = -30 dBm 3 dBm ISL Reverse Isolation -28 dB RLin Input return loss f = 1500-1650 MHz 10 dB RLout Output return loss f = 1500-1650 MHz 10 dB VPDL(1) Power down low state VPDH(2) Power down high state 1. The device is switched to OFF state 4/14 Min. Frequency Stability 2. Test conditions The device is switched to ON state VPD ≤ VPDL 1.0 100 - 10000 MHz 0.5 V Vcc V Unconditionally stable SMA661AS 3 Typical performance Typical performance (Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13 at pin level) Figure 3. Power gain vs. frequency Figure 4. 22 0 21 -2 Ta = +25 ºC Ta = -40 ºC 20 -4 19 -6 18 17 Ta = -40 ºC Ta = +25 ºC -8 Ta = +85 ºC IRL (dB) Gp (dB) Input return loss vs. frequency 16 15 -10 -12 Ta = +85 ºC 14 -14 13 12 -16 11 -18 10 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 -20 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 f (MHz) f (MHz) Figure 5. Noise figure vs. frequency Figure 6. 3.0 Reverse isolation vs. frequency -20 -22 2.5 -24 ISL (dB) NF (dB) 1.5 Ta = +25 ºC Ta = -40 ºC -26 2.0 Ta = +85 ºC -28 Ta = +85 ºC -30 -32 Ta = +25 ºC 1.0 -34 Ta = -40 ºC -36 0.5 -38 0.0 1500 1520 1540 1560 1580 -40 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 1600 f (MHz) f (MHz) Output return loss vs. frequency Figure 8. 0 5 -2 4.5 -4 4 -6 3.5 Ta = +85 ºC -8 Ta = +25 ºC -10 Ta = -40 ºC -12 -14 IIP3 (dBm) ORL (dB) Figure 7. IIP3 vs. temperature 3 2.5 2 1.5 -16 1 -18 0.5 -20 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 f (MHz) 0 -40 25 T (°C) 85 5/14 Typical performance Figure 9. SMA661AS Current consumption vs. temperature Figure 10. Gain power down vs. temperature -16 8.3 -17 8.2 -18 8.1 -19 Gpd (dB) -15 8.4 Icc (mA) 8.5 8 -21 7.8 -22 7.7 -23 7.6 -24 -25 7.5 -40 25 T (°C) +85 Figure 11. Power down current vs. temperature 60 50 Ipd (nA) 40 30 20 10 0 -40 Note: 6/14 -20 7.9 -15 10 T (°C) 35 60 85 S-Parameter are available on request. -40 25 T (°C) +85 SMA661AS Typical performance Figure 12. Stability 5 4.5 4 3.5 3 K 2.5 2 1.5 1 0.5 0 0 -K 1 2 3 4 5 6 7 8 9 10 f (GHz) 7/14 Evaluation board description 4 SMA661AS Evaluation board description Figure 13. Evaluation board C2 47p 1 2 Vcc JP1 U1 C3 J1 C1 1uF 1 RF IN 3 3n F C5 6 RFin Vcc 2 GND GND 5 3 PD SMA661 RFout 4 J2 RF OUT SMA661AS 4 7p VPdown C6 1 uF Table 5. Evaluation board bill of material Component Value Type Manufacturer Function C1 1 µF (electrolytic) Case_A Various Supply Filter C2 47 pF 0603 Murata (GRM188) RF Bypass C3 33 nF 0603 Murata (GRM188) Input dc block / IIP3 improvement C5 47 pF 0603 Murata (GRM188) RF Bypass C6 1 µF (electrolytic) Case_A Various Supply Filter J1 - 142-0711-841 (SMA_Female) Johnson RF Input connector J2 - 142-0711-841 (SMA_Female) Johnson RF Output connector U1 - SOT666 STMicroelectronics SMA661AS GPS LNA Substrate - FR4 18 mm x 20 mm x 1.1 mm Various Layer = 3 (see Figure 14 & 15) 8/14 SMA661AS Evaluation board description Figure 14. Evaluation Board Layout 20 mm 18 mm Figure 15. Evaluation board cross section Note: Gerber files of the SMA661AS evaluation board are available on request. Layout recommendation: Both lines from pin 2 and pin 5 to GND plane have to be as short as possible to maximize the performances. Therefore a via hole under the IC is highly recommended. 9/14 Package and packing informations SMA661AS 5 Package and packing informations 5.1 Package informations In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. SOT666 (Lead-free) mechanical data mm. DIM. MIN. A A3 b b1 D E E1 e L1 L2 L3 TYP MAX. 0.27 0.60 018 0.27 0.34 1.70 1.70 1.30 0.45 0.08 0.17 1.50 1.50 1.10 0.50 0.19 0.10 0.30 0.10 Figure 16. SOT666 (Lead-free) package outline b1 0.10 M A L1 L3 b A3 A D A E E1 L2 e 10/14 SMA661AS Package and packing informations Figure 17. Recommended footprint 0.50 0.62 2.60 0.99 0.30 5.2 Packing informations Figure 18. Reel description TAPE SLOT INTO CORE FOR TAPE START ACCESS HOLE AT SLOT LOCATION W1 measured at hub C A N e1 D W2 measured at hub W3 measured at outer edge mm A C D e1 N W1 W2 Min 175 12.8 20.2 1.5 59.5 8.4 7.9 Typ 180 13 60 8.4 9.4 Max 185 13.2 60.5 10 14.4 W3 10.9 11/14 Package and packing informations SMA661AS Figure 19. Carrier tape requirements Po K Do T E P2 F Bo W Bo Ao Ko P D1 USER DIRECTION OF FEED Ao Bo Do D1 E F Ko Po P P2 T W Min Typ Max 1.73 1.73 1.5 1 1.65 3.45 0.64 3.9 3.9 1.95 0.18 7.9 1.78 1.78 1.5 1.83 1.83 1.6 1.75 3.5 0.69 4 4 2 0.2 8 1.85 3.65 0.73 4.1 4.1 2.05 0.21 8.3 Figure 20. Device orientation Sprocket holes on the right Sprocket holes on the left Sprocket hole 661 12/14 661 Cavity 661 661 SMA661AS 6 Revision history Revision history Table 7. Document revision history Date Revision Changes 15-Jul-2005 1 Initial release. 20-Oct-2005 2 Added: Evaluation Board Schematic & Layout. 07-Jul-2006 3 Changed to new template. Added packing informations. 04-Apr-2007 4 Updated noise figure and high gain values. Updated Figure 3 and Figure 5. 27-Mar-2009 5 Added max. value to the parameter “VPDH” in Table 4: Electrical characteristics. 23-Sep-2013 6 Updated Disclaimer. 13/14 SMA661AS Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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