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STB160N75F3

STB160N75F3

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT404

  • 描述:

    MOSFET N-CH 75V 120A D2PAK

  • 数据手册
  • 价格&库存
STB160N75F3 数据手册
STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK STripFET™ Power MOSFET Features Type VDSS RDS(on) (max.) ID STB160N75F3 75V 3.7 mΩ 120 A(1) 3 1 STP160N75F3 75V 4 mΩ 120 A(1) STW160N75F3 75V 4 mΩ 120 A(1) 2 2 3 1 TO-220 TO-247 1. Current limited by package 3 1 ■ Ultra low on-resistance ■ 100% Avalanche tested D²PAK Application ■ Figure 1. Switching applications Internal schematic diagram Description This N-channel enhancement mode Power MOSFET is the latest refinement of ST’s STripFET™ process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order codes Marking Package Packaging STB160N75F3 160N75F3 D²PAK Tape & reel STP160N75F3 160N75F3 TO-220 Tube STW160N75F3 160N75F3 TO-247 Tube October 2007 Rev 2 1/16 www.st.com 16 Contents STB160N75F3 - STP160N75F3 - STW160N75F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ................................................ 9 STB160N75F3 - STP160N75F3 - STW160N75F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 75 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25°C 120 A Drain current (continuous) at TC = 100°C 120 A Drain current (pulsed) 480 A Total dissipation at TC = 25°C 330 W Derating factor 2.2 W/°C dv/dt (3) Peak diode recovery voltage slope 20 V/ns EAS (4) Single pulse avalanche energy 600 mJ Tj Operating junction temperature Storage temperature -55 to 175 °C ID (1) ID (1) IDM (2) PTOT Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD < 120A, di/dt < 1100 A/µs, VDD < 60V, TJ < TJMAX 4. Starting TJ = 25°C, ID = 60A, VDD = 25V Table 3. Thermal resistance Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max (1) Rthj-pcb Tl Thermal resistance junction-pcb Maximum lead temperature for soldering purpose TO-247 D²PAK 0.45 °C/W 62.5 50 -- °C/W -- -- 50 °C/W 300 °C 1. When mounted on 1 inch² FR4 2 oz Cu 3/16 Electrical characteristics 2 STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions Min. Typ. ID = 250µA, VGS= 0 Max Unit 75 V IDSS VDS = Max rating, Zero gate voltage V = Max drain current (VGS = 0) DS rating,@125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) ±200 nA 4 V 4 3.7 mΩ mΩ VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on VGS= 10V, ID= 60A resistance Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd 4/16 On/off states 2 TO-220 TO-247 D²PAK 3.5 3.2 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =25V, f=1 MHz, VGS=0 VDD=37.5V, ID = 120A VGS =10V (see Figure 16) Min Typ Max Unit 6750 1080 40 pF pF pF 85 27 26 nC nC nC STB160N75F3 - STP160N75F3 - STW160N75F3 Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions RG=4.7Ω, VGS=10V, (see Figure 18) Parameter Test conditions VSD(2) Forward on voltage ISD=120A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, VDD= 20 V, IRRM Max. Unit ns ns ns ns Source drain diode Source-drain current Source-drain current (pulsed) Qrr Typ. 22 65 100 15 VDD=37.5 V, ID= 60A, ISDM(1) trr Min. di/dt = 100 A/µs, Tj=25°C (see Figure 17) Min. Typ. 70 150 4.2 Max. Unit 120 480 A A 1.5 V ns nC A 1. Pulse with limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/16 Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / TO-247 Figure 3. Thermal impedance for TO-220 / TO-247 Figure 4. Safe operating area for D²PAK Figure 5. Thermal impedance for D²PAK Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16 STB160N75F3 - STP160N75F3 - STW160N75F3 Figure 8. Normalized BVDSS vs temperature Electrical characteristics Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/16 STB160N75F3 - STP160N75F3 - STW160N75F3 STB160N75F3 - STP160N75F3 - STW160N75F3 3 Test circuit Test circuit Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/16 Package mechanical data 4 STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/16 Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 12/16 TYP 5.50 0.216 STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data D²PAK mechanical data mm inch Dim Min A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 Typ 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 Max Min 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 10.4 0.393 8 10 0.409 0.334 5.28 15.85 1.4 1.75 3.2 0.4 0° Max 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 8.5 4.88 15 1.27 1.4 2.4 Typ 0.192 0.590 0.50 0.055 0.094 0.208 0.625 0.55 0.68 0.126 0.015 4° 13/16 Packaging mechanical data 5 STB160N75F3 - STP160N75F3 - STW160N75F3 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 14/16 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB160N75F3 - STP160N75F3 - STW160N75F3 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 07-Feb-2007 1 First release 02-Oct-2007 2 New section has been added: Electrical characteristics (curves) 15/16 STB160N75F3 - STP160N75F3 - STW160N75F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16
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