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STB25NM50N

STB25NM50N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT404

  • 描述:

    MOSFET N-CH 500V 22A D2PAK

  • 数据手册
  • 价格&库存
STB25NM50N 数据手册
STx25NM50N N-channel 500 V, 0.11 Ω, 22 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features Type VDSS (@Tjmax) RDS(on) max ID 3 ) s ( ct 3 STB25NM50N 550 V < 0.140 Ω 22 A STB25NM50N-1 550 V < 0.140 Ω 22 A STF25NM50N 550 V < 0.140 Ω 22 A(1) 1 u d o 3 1 STP25NM50N 550 V < 0.140 Ω 22 A STW25NM50N 550 V < 0.140 Ω 22 A D²PAK 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Switching applications r P e t e l o ) (s Application Description 3 12 I²PAK ■ 2 TO-220 TO-220FP 1. Limited only by maximum temperature allowed ■ 1 2 s b O Figure 1. 2 3 1 TO-247 Internal schematic diagram t c u d o r This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. P e t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STB25NM50N B25NM50N D2PAK Tape and reel STB25NM50N-1 B25NM50N 2PAK Tube STF25NM50N F25NM50N TO-220FP Tube STP25NM50N P25NM50N TO-220 Tube STW25NM50N W25NM50N TO-247 Tube November 2008 I Rev 13 1/18 www.st.com 18 Contents STx25NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit ................................................ 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 2/18 s b O STx25NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, I²PAK TO-220FP D²PAK, TO-247 VDS Drain-source voltage (VGS = 0) 500 VGS Gate- source voltage ±25 V V (s) (1) ID Drain current (continuous) at TC = 25 °C 22 22 ID Drain current (continuous) at TC = 100 °C 14 14 (1) IDM (2) PTOT Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor 1.28 e t e l Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) VISO dv/dt (3) so Tstg Peak diode recovery voltage slope Storage temperature b O -- ) (s 40 W 0.32 W/°C 2500 V (1) A 15 V/ns –55 to 150 °C 150 °C Max. operating junction temperature Tj A 88 o r P 160 A ct du 88 Unit 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area t c u 3. ISD ≤ 22 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS d o r Table 3. P e Symbol t e l o O bs Thermal data Value Parameter TO-220, I²PAK TO-220FP D²PAK, TO-247 Unit Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 4. Symbol 0.78 3.1 °C/W Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 10 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 350 mJ 3/18 Electrical characteristics 2 STx25NM50N Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD = 400 V, ID = 25 A, VGS = 10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 11 A Table 6. Symbol b O Parameter s ( t c Max. Unit 44 2 Min. V/ns ) s ( ct u d o r P e Test conditions V 3 1 10 µA µA 100 nA 4 V Ω 0.110 0.140 Typ. Max. Unit gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 2565 511 77 Equivalent output capacitance VGS = 0, VDS = 0 to 400 V 315 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 22 A, VGS = 10 V, (see Figure 19) 84 11 35 nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain 1.6 Ω e t e l du o r P Coss eq. (2) so O ) Dynamic Typ. 500 let o s b 1. Characteristic value at turn off on inductive load Min. VDS =15 V, ID = 11 A 19 S pF pF pF 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/18 STx25NM50N Electrical characteristics Table 7. Switching times Symbol td(on) tr td(off) tf Table 8. Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time ISD Source-drain current Source-drain current (pulsed) VSD (2) trr Qrr IRRM trr Qrr IRRM 23 23 75 22 ns ns ns ns Source drain diode Parameter ISDM Typ. Max. Unit VDD = 250 V, ID = 11 A RG = 4.7 Ω VGS = 10 V (see Figure 18) Symbol (1) Min. Test conditions Forward on voltage ISD = 22 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, di/dt = 100 A/µs VDD = 100 V (see Figure 23) Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 23) 1. Pulse width limited by safe operating area Typ. Max Unit (s) 22 88 A A 1.3 V t c u od r P e let o s b Min 460 6.9 30 ns µC A 532 8.25 31 ns µC A O ) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% s ( t c u d o r P e t e l o s b O 5/18 Electrical characteristics STx25NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK ) s ( ct Figure 4. Safe operating area for TO-220FP ) (s Figure 5. u d o r P e Thermal impedance for TO-220FP t e l o s b O t c u d o r P e t e l o bs Figure 6. O 6/18 Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 STx25NM50N Figure 8. Electrical characteristics Output characteristics Figure 9. Transfer characteristics ) s ( ct u d o r P e Figure 10. Transconductance Figure 11. Static drain-source on resistance t e l o ) (s s b O t c u d o r P e t e l o Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations s b O 7/18 Electrical characteristics STx25NM50N Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature ) s ( ct Figure 16. Source-drain diode forward characteristics u d o r P e Figure 17. Normalized BVDSS vs temperature t e l o ) (s t c u d o r P e t e l o s b O 8/18 s b O STx25NM50N 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit ) s ( ct u d o r P e Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit t e l o ) (s s b O t c u d o r P e t e l o Figure 22. Unclamped inductive waveform s b O Figure 23. Switching time waveform 9/18 Package mechanical data 4 STx25NM50N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:www.st.com ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 10/18 s b O STx25NM50N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ 1.27 s b O 3.85 2.95 u d o r P e t e l o 16.40 28.90 ) (s ) s ( ct 0.050 10 2.40 4.95 1.23 6.20 2.40 13 3.50 3.75 2.65 Max 0.181 0.034 0.066 0.027 0.62 0.147 0.104 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 t c u d o r P e t e l o s b O 11/18 Package mechanical data STx25NM50N D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 Typ u d o O ) u d o r P e t e l o s b O 0079457_M r P e t e l o bs 0.4 0° 8° 0.192 0.590 0.099 0.090 0.05 0.051 ) s ( ct 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 2.54 4.88 15 2.49 2.29 1.27 1.30 s ( t c 12/18 Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.208 0.624 0.106 0.110 0.055 0.069 0.016 0° 8° STx25NM50N Package mechanical data I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max ) s ( ct u d o r P e 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 t e l o ) (s s b O t c u d o r P e t e l o s b O 13/18 Package mechanical data STx25NM50N TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MIN. 4.6 0.173 0.181 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 E 0.45 0.7 0.017 F 0.75 1 0.030 F1 1.15 1.7 0.045 F2 1.15 1.7 0.045 G 4.95 5.2 0.195 G1 2.4 2.7 0.094 H 10 10.4 0.393 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 L6 15.9 L7 9 Ø 3 0.067 u d o e t e l Pr o s b 0.106 0.409 1.204 0.417 0.114 0.141 0.626 0.645 0.354 0.366 3.2 0.118 0.126 E L3 L6 F2 H G G1 F F1 L7 L2 0.067 0.204 0.630 D A ) s ( ct 0.039 9.3 s ( t c t e l o 14/18 0.108 0.027 B r P e MAX. .0385 16.4 O ) TYP. 1.126 3.6 u d o s b O MAX. L5 1 2 3 L4 STx25NM50N Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 Typ Max. 5.15 2.60 ) s ( ct b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 D 19.85 E 15.45 u d o 0.80 e 5.45 L 14.20 L1 3.70 t e l o L2 øP 3.55 øR 4.50 S r P e s ( t c )- s b O 20.15 15.75 14.80 4.30 18.50 3.65 5.50 5.50 u d o r P e t e l o s b O 15/18 Packaging mechanical data 5 STx25NM50N Packaging mechanical data D2PAK FOOTPRINT ) s ( ct u d o r P e TAPE AND REEL SHIPMENT REEL MECHANICAL DATA t e l o DIM. )- s ( t c u d o TAPE MECHANICAL DATA DIM. O MIN. MAX. MIN. 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 MAX. D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 0.449 0.456 F 11.4 11.6 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 inch A0 e t e ol bs Pr mm 0.933 0.956 s b O mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T MAX. inch MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STx25NM50N 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 30-Nov-2004 1 First release. 08-Mar-2005 2 Inserted curves 22-Mar-2005 3 Modified title 13-Apr-2005 4 Modified some values 28-Apr-2005 5 Modified some values on Table 8 16-May-2005 6 Modified values on Table 7 17-Jun-2005 7 Inserted new row on Table 6 07-Sep-2005 8 Inserted ecopack indication 05-Oct-2005 9 Modified curves Figure 8, Figure 9 09-Nov-2005 10 Modified Figure 11 14-Nov-2006 11 New template, new value on Absolute maximum ratings 19-Jan-2007 12 Typo mistake on Table 7 17-Nov-2008 13 Corrected marking in Table 1 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 17/18 STx25NM50N ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. t e l o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. ) (s s b O UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. t c u UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. d o r P e t e l o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. s b O ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18
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