STx30NM60ND
N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET
(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
VDSS @TJ
max
Type
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
650 V
RDS(on)
max
ID
0.13 Ω
25 A
25 A
25 A(1)
25 A
25 A
D PAK
The world’s best RDS(on) in TO-220 amongst
the fast recovery diode devices
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
■
Extremely high dv/dt and avalanche
capabilities
Application
TO-220
r
P
e
t
e
l
o
s
b
O
Figure 1.
)
(s
1
1
2
'
t
e
l
o
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.
s
b
O
Table 1.
TO-220FP
Internal schematic diagram
t
c
u
P
e
Description
3
2
$
d
o
r
Switching applications
1
3
u
d
o
3
2
3
■
■
2
1
TO-247
1. Limited only by maximum temperature allowed
■
)
s
(
ct
3
12
2
I PAK
3
!-V
It is therefore strongly recommended for bridge
topologies, in particular ZVS phase-shift
converters.
Device summary
Order codes
Marking
Package
Packaging
STB30NM60ND
30NM60ND
D²PAK
Tape and reel
STI30NM60ND
30NM60ND
I²PAK
Tube
STF30NM60ND
30NM60ND
TO-220FP
Tube
STP30NM60ND
30NM60ND
TO-220
Tube
STW30NM60ND
30NM60ND
TO-247
Tube
November 2008
Rev 2
1/18
www.st.com
18
Contents
STx30NM60ND
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
.............................................. 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
2/18
s
b
O
STx30NM60ND
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220/D2PAK
I2PAK / TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
600
VGS
Gate- source voltage
± 25
ID
Drain current (continuous) at TC = 25 °C
25
ID
Drain current (continuous) at TC = 100 °C
15.8
IDM
(2)
PTOT
(3)
dv/dt
Drain current (pulsed)
100
Total dissipation at TC = 25 °C
190
Peak diode recovery voltage slope
e
t
e
ol
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
ct
du
100(1)
o
r
P
--
bs
(s)
(1)
15.8(1)
40
A
A
A
W
V/ns
2500
V
– 55 to 150
°C
O
)
Max. operating junction temperature
TJ
V
25
40
VISO
V
150
1. Limited only by maximum temperature allowed
s
(
t
c
2. Pulse width limited by safe operating area
3.
ISD ≤ 25 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
Table 3.
Pr
Symbol
ete
b
O
l
o
s
u
d
o
Thermal data
Parameter
Rthj-case
Thermal resistance
junction-case max
Rthj-amb
Thermal resistance
junction-ambient max
Rthj-pcb
Thermal resistance
junction-pcb max
Tl
Table 4.
Symbol
TO-220
I²PAK
TO-247
D²PAK TO-220FP
0.66
62.5
--
Maximum lead temperature
for soldering purpose
--
Unit
3.1
°C/W
50
--
62.5
°C/W
--
30
--
°C/W
300
°C
Avalanche characteristics
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max)
12
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
900
mJ
3/18
Electrical characteristics
2
STx30NM60ND
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Value
Symbol
Parameter
Test conditions
Unit
Min.
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Drain source voltage slope
VDD= 480 V, ID= 25 A,
VGS= 10 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating @125 °C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 12.5 A
V(BR)DSS
dv/dt(1)
b
O
1. Characteristic value at turn off on inductive load
Table 6.
ct
Symbol
(1)
Parameter
du
V/ns
uc
1
100
µA
µA
100
nA
4
5
V
0.11
0.13
Ω
d
o
r
3
Min.
Typ.
Max.
Unit
25
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
2800
200
24
Coss eq.(2)
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
125
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =300 V, ID = 12.5 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 23),
(see Figure 18)
20
50
110
75
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 25 A,
VGS = 10 V,
(see Figure 19)
100
16
54
nC
nC
nC
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
3.0
Ω
Ciss
Coss
Crss
Forward transconductance
)
s
(
t
48
P
e
Test conditions
V
VDS = 15 V, ID = 12.5 A
gfs
ro
P
e
t
e
l
o
s
b
O
)
(s
Dynamic
Max.
600
let
so
Typ.
Rg
S
pF
pF
pF
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18
STx30NM60ND
Electrical characteristics
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
25
100
A
A
1.6
V
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 25 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25 A, VDD = 60 V
di/dt=100 A/µs
(see Figure 20)
170
1.2
15
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25 A,VDD = 60 V
di/dt=100 A/µs,
TJ = 150 °C
(see Figure 20)
250
2.5
20
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
)
s
(
ct
u
d
o
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
5/18
Electrical characteristics
STx30NM60ND
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 3.
Thermal impedance for TO-220 /
D²PAK / I²PAK
)
s
(
ct
Figure 4.
Safe operating area for TO-220FP
)
(s
Figure 5.
u
d
o
r
P
e
Thermal impedance for TO-220FP
t
e
l
o
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
bs
Figure 6.
O
6/18
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
STx30NM60ND
Figure 8.
Electrical characteristics
Output characteristics
Figure 9.
AM00051v1
ID(A)
Transfer characteristics
AM00052v1
ID(A)
VGS=10V
30
5
25
4
5V
20
3
15
2
10
)
s
(
ct
1
5
4V
0
0
0
5
10
15
20
25
30 VSD(V)
0
Figure 10. Transconductance
2
du
4
6
VGS(V)
8
o
r
P
Figure 11. Static drain-source on resistance
AM00048v1
Gfs(S)
ete
RDS(on)
(Ω)
l
o
s
0.135
30.5
TJ=-50°C
AM00046v1
25°C
b
O
0.115
25.5
150°C
)
(s
20.5
15.5
t
c
u
10.5
od
5.5
0.5
0
5
e
t
e
ol
Pr
10
15
0.095
VGS=10V
0.075
ID=12.5A
0.055
0.035
0.015
20
25
30
ID(A)
0
5
10
15
20
25
30
ID(A)
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
O
bs
AM00044v1
AM00045v1
VGS(V)
VDD=480V
ID=25A
12
C(pF)
10000
Ciss
10
1000
8
6
Coss
100
4
Crss
2
10
0
0
20
40
60
80
100
Qg(nC)
1
0.1
1
10
100
VGS(V)
7/18
Electrical characteristics
STx30NM60ND
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
AM00043v1
VGS(th)
AM00047v1
RDS(on)
(norm)
(norm)
1.1
2.1
ID=250µA
1.05
1.9
1
1.7
0.95
1.5
0.9
1.3
0.85
1.1
0.8
0.9
0.75
0.7
0.7
0.5
-50
-25
0
25
50
75
100
Figure 16. Source-drain diode forward
characteristics
VSD(V)
1
-50
125 T150
J(°C)
25°C
150°C
)-
s
(
t
c
u
d
o
0.2
r
P
e
0
t
e
l
o
s
b
O
8/18
10
20
du
75
100
o
r
P
125
T150
J(°C)
AM00049v1
b
O
1.03
0.4
50
l
o
s
1.07
1.05
0.6
25
ete
BVDSS
(norm)
0.8
0
Figure 17. Normalized BVDSS vs temperature
AM00050v1
TJ=-50°C
0
-25
)
s
(
ct
1.01
0.99
0.97
0.95
0.93
ISD(A)
-50
-25
0
25
50
75
100
125
T150
J(°C)
STx30NM60ND
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
)
s
(
ct
u
d
o
r
P
e
Figure 20. Test circuit for inductive load
Figure 21. Unclamped Inductive load test
switching and diode recovery times
circuit
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
Figure 22. Unclamped inductive waveform
s
b
O
Figure 23. Switching time waveform
9/18
Package mechanical data
4
STx30NM60ND
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
10/18
s
b
O
STx30NM60ND
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
Typ
Max
1.27
0.181
0.034
0.066
0.027
0.62
)
s
(
ct
0.050
10
2.40
4.95
1.23
6.20
2.40
13
3.50
16.40
28.90
t
e
l
o
bs
3.75
2.65
r
P
e
3.85
2.95
u
d
o
0.147
0.104
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
0.151
0.116
O
)
s
(
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
11/18
Package mechanical data
STx30NM60ND
TO-220FP mechanical data
mm.
DIM.
Min.
inch
Typ.
Min.
Max.
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
0.039
F
0.75
1
0.030
F1
1.15
1.7
0.045
F2
1.15
1.7
0.045
G
4.95
5.2
0.195
G1
2.4
2.7
0.094
H
10
10.4
0.393
)
s
(
ct
0.067
0.067
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
9
Ø
3
o
r
P
9.3
0.354
0.366
3.2
0.118
0.126
.0385
bs
O
)
1.204
e
t
e
ol
0.417
0.114
0.141
0.626
0.645
D
E
s
(
t
c
A
1.126
B
L3
L6
t
e
l
o
F2
H
G
G1
F1
L7
F
r
P
e
0.106
0.409
0.630
L3
L7
0.204
du
16
u
d
o
L2
12/18
Typ.
A
L2
s
b
O
Max.
L5
1 23
L4
STx30NM60ND
Package mechanical data
TO-262 (I2PAK) mechanical data
mm.
inch
DIM.
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.40
4.60
0.173
0.181
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
D
8.95
9.35
0.352
e
2.40
2.70
0.094
e1
4.95
5.15
0.194
E
10
10.40
0.393
L
13
14
0.511
L1
3.50
3.93
L2
1.27
o
s
b
e
t
e
l
1.40
0.137
0.050
)
s
(
ct
0.052
0.368
o
r
P
du
0.106
0.202
0.410
0.551
0.154
0.055
O
)
s
(
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
13/18
Package mechanical data
STx30NM60ND
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
Min
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
Typ
u
d
o
u
d
o
r
P
e
t
e
l
o
s
b
O
0079457_M
8°
0°
e
t
e
ol
bs
0.4
0°
O
)
Pr
0.192
0.590
0.099
0.090
0.05
0.051
)
s
(
ct
0.409
0.1
5.28
15.85
2.69
2.79
1.40
1.75
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
2.54
4.88
15
2.49
2.29
1.27
1.30
s
(
t
c
14/18
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
STx30NM60ND
Package mechanical data
TO-247 Mechanical data
mm.
Dim.
A
Min.
4.85
A1
2.20
Typ
Max.
5.15
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
E
15.45
)
s
(
ct
20.15
e
5.45
L
14.20
L1
3.70
du
e
t
e
l
L2
o
r
P
15.75
14.80
4.30
18.50
øP
3.55
øR
4.50
S
O
)
o
s
b
3.65
5.50
5.50
s
(
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
15/18
Packing mechanical data
5
STx30NM60ND
Packing mechanical data
D2PAK FOOTPRINT
)
s
(
ct
u
d
o
r
P
e
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
t
e
l
o
DIM.
)-
s
(
t
c
u
d
o
TAPE MECHANICAL DATA
DIM.
MIN.
MAX.
MIN.
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
16/18
inch
A0
e
t
e
ol
s
b
O
Pr
mm
0.933 0.956
s
b
O
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
MAX.
inch
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STx30NM60ND
6
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
Changes
29-Nov-2007
1
initial release
11-Nov-2008
2
Document status promoted from preliminary data to datasheet.
)
s
(
ct
u
d
o
r
P
e
t
e
l
o
)
(s
s
b
O
t
c
u
d
o
r
P
e
t
e
l
o
s
b
O
17/18
STx30NM60ND
)
s
(
ct
Please Read Carefully:
u
d
o
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
r
P
e
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
t
e
l
o
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
)
(s
s
b
O
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
t
c
u
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
d
o
r
P
e
t
e
l
o
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
s
b
O
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
18/18
工商网监
湘ICP备2023018690号
