STB45NF06T4

STB45NF06 N-channel 60 V, 0.22 Ω typ., 38 A STripFET™ II Power MOSFET in a D2PAK package Datasheet — production data Features Order code STB45NF06T4 ■ VDS RDS(on) max ID 60 V 0.028 Ω 38 A TAB Typical RDS(on) = 0.022 Ω ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Standard threshold drive 3 1 D2PAK Applications ■ Figure 1. Switching applications Internal schematic diagram Description $4!" This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STB45NF06T4 B45NF06 D2PAK Tape and reel November 2012 This is information on a product in full production. Doc ID 10428 Rev 2 1/15 www.st.com 15 Contents STB45NF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 8 Doc ID 10428 Rev 2 STB45NF06 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage 60 V Drain-gate voltage (RGS=20 kΩ) 60 V ± 20 V Gate-source voltage ID Drain current (continuous) at TC = 25 °C 38 A ID Drain current (continuous) at TC = 100 °C 26 A Drain current (pulsed) 152 A Total dissipation at TC = 25 °C 80 W 0.53 W/°C 7 V/ns - 65 to 175 °C 175 °C Value Unit 1.88 °C/W 35 °C/W Value Unit IDM (1) PTOT Derating factor dv/dt (2) Tstg Tj Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 38 A, di/dt ≤300 A/µs; VDS(peak) < V(BR)DSS , VDD=80 % V(BR)DSS Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case max Rthj-amb(1) Thermal resistance junction-ambient max 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax ) 38 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID= IAR; VDD=50 V) 135 mJ Doc ID 10428 Rev 2 3/15 Electrical characteristics 2 STB45NF06 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 5. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 250 mA, VGS = 0 IDSS Zero gate voltage VDS = 60 V drain current (VGS = 0) VDS = 60 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 19 A resistance Symbol Typ. Max. 60 2 Unit V 1 10 µA µA ± 100 nA 3 4 V 0.022 0.028 Ω Typ. Max. Unit VGS = ± 20 V VGS(th) Table 6. Min. Dynamic Parameter Test conditions Min. gfs(1) Forward trasconductance VDS>ID(on)*RDS(on)max, ID=19 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 1730 215 63 Qg Qgs Qgs Total gate charge Gate-source charge Gate-drain charge VDD = 48 V, ID = 38 A, VGS = 10 V 43 9 15 58 - ns ns ns Min. Typ. Max. Unit - 20 100 - ns ns - 50 20 - ns ns - 45 42 60 - ns ns ns 24 S - pF pF pF 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 7. Symbol 4/15 Switching times Parameter td(on) tr Turn-on delay time Voltage rise time td(off) tf Turn-off delay time Fall time td(off) tf tc Off-voltage rise time Fall time Cross-over time Test conditions VDD = 30 V, ID = 19 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14) Vclamp = 48 V, ID = 38 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) Doc ID 10428 Rev 2 STB45NF06 Electrical characteristics Table 8. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current trr Qrr IRRM Test conditions Min. Typ. Max. Unit - 38 152 A A ISD = 38 A, VGS = 0 - 1.5 V ISD = 38 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 16) - 95 260 5.5 ns µC A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Pulse width limited by safe operating area. Doc ID 10428 Rev 2 5/15 Electrical characteristics STB45NF06 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance 175 Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on-resistance 6/15 Doc ID 10428 Rev 2 STB45NF06 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature Doc ID 10428 Rev 2 7/15 Test circuits 3 STB45NF06 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform AM01471v1 Figure 19. Switching time waveform Inductive Load Turn - off V(BR)DSS Id VD 90%Vds 90%Id td(v) IDM Vgs 90%Vgs on ID )) Vgs(I(t)) VDD VDD 10%Id 10%Vds Vds tr(v) AM01472v1 8/15 Doc ID 10428 Rev 2 tf(i) tc(off) AM05540v1 STB45NF06 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 10428 Rev 2 9/15 Package mechanical data Table 9. STB45NF06 D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/15 Max. 0.4 0° 8° Doc ID 10428 Rev 2 STB45NF06 Package mechanical data Figure 20. D²PAK (TO-263) drawing 0079457_T Figure 21. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters Doc ID 10428 Rev 2 11/15 Packaging mechanical data 5 STB45NF06 Packaging mechanical data Table 10. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 12/15 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 10428 Rev 2 Min. Max. 330 13.2 26.4 30.4 STB45NF06 Packaging mechanical data Figure 22. Tape for D²PAK (TO-263) and DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 23. Reel for D²PAK (TO-263) and DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 10428 Rev 2 13/15 Revision history 6 STB45NF06 Revision history Table 11. 14/15 Document revision history Date Revision Changes 27-Sep-2012 1 First release. 16-Nov-2012 2 – Rthj-case has been updated in table 3 – Updated Section 4: Package mechanical data. – Minor text changes on cover page Doc ID 10428 Rev 2 STB45NF06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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