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STD10P10F6

STD10P10F6

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT428

  • 描述:

    MOSFET P-CH 100V 10A

  • 数据手册
  • 价格&库存
STD10P10F6 数据手册
STD10P10F6 Datasheet P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package Features TAB 2 3 1 • • • • DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD10P10F6 -100 V 0.18 Ω -10 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications • Switching applications G(1) Description S(3) AM11258v1 This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STD10P10F6 Product summary Order code STD10P10F6 Marking 10P10F6 Package DPAK Packing Tape and reel DS10343 - Rev 3 - April 2022 For further information contact your local STMicroelectronics sales office. www.st.com STD10P10F6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -100 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C -10 A ID Drain current (continuous) at TC = 100 °C -7.5 A IDM (1) Drain current (pulsed) -40 A PTOT Total power dissipation at TC=25 °C 40 W Tstg Storage temperature range - 55 to 175 °C Value Unit Thermal resistance, junction-to-case 3.75 °C/W Thermal resistance, junction-to-board 50 °C/W TJ Operating junction temperature range 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol RthJC RthJB (1) Parameter 1. When mounted on FR-4 board of 1inch², 2oz Cu t < 10 s. DS10343 - Rev 3 page 2/16 STD10P10F6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 3. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = -250 μA Zero gate voltage VGS = 0 V, VDS = -100 V drain current VGS = 0 V, VDS = -100 V, TC = 125 Gate-body leakage Min. Typ. -100 VGS(th) Gate threshold voltage VDS = VGS, ID = -250 µA RDS(on) Static drain-source on- resistance VGS = -10 V, ID = -5 A Unit V -1 µA -10 µA ±100 nA -4 V 0.136 0.18 Ω Min. Typ. Max. Unit - 864 - pF - 45 - pF - 25 - pF - 16.5 - nC - 3.5 - nC - 3.8 - nC Min. Typ. Max. Unit - 10.5 - ns - 4.8 - ns - 24 - ns - 4.5 - ns Min. Typ. Max. Unit -1.1 V °C(1) VDS = 0 V, VGS = ±20 V current Max. -2 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = -80 V, f = 1 MHz, VGS = 0 V VDD = -80 V, ID = -10 A, VGS = -10 V (see Figure 13. Gate charge test circuit) Table 5. Switching on/off (inductive load) Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD = -80 V, ID = -5 A, RG = 4.7 Ω, Rise time VGS = -10 V (see Figure 12. Switching times test circuit for resistive load) Turn-off delay time Fall time Table 6. Source drain-diode Symbol VSD (1) Parameter Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions ISD = -5 A, VGS = 0 V ISD = -10 A, di/dt = 100 A/µs, VDD = -80 V (see Figure 14. Test circuit for inductive load switching and diode recovery times) - 26.5 ns - 36.5 nC - -2.7 A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DS10343 - Rev 3 page 3/16 STD10P10F6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Note: For the P-channel Power MOSFET, current and voltage polarities are reversed. Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance GIPG021020141123FSR ID (A) GIPG021020141545FSR K δ= 0.5 0.2 is ea ) ar on s DS( i th R in ax n tio y m ra d b e e p O mit Li 10 100µs 0.1 1ms 1 10ms Tj=175°C Tc=25°C Single pulse 0.1 0.1 1 VDS(V) 10 Figure 3. Typical output characteristics GIPG270520141052SA ID (A) VGS=7, 8, 9, 10V 25 20 SINGLE PULSE 10-2 10-5 10 10 5 VDS=16V 5 4V 12 VDS(V) Figure 5. Typical gate charge characteristics GIPG270520141105SA VDD=80V ID=10A 12 tp(s) GIPG270520141058SA ID (A) 15 VGS (V) 10-2 Figure 4. Typical transfer characteristics 15 8 10-3 20 5V 4 10-4 25 6V 0 0 0.05 0.02 0.01 10-1 0 2 3 4 5 6 7 9 8 VGS(V) Figure 6. Typical drain-source on-resistance GIPG270520141110SA RDS(on) (mΩ) VGS=10V 135.5 10 135 8 134.5 6 134 4 133.5 2 0 DS10343 - Rev 3 0 5 10 15 20 Qg(nC) 133 1 2 3 4 5 ID(A) page 4/16 STD10P10F6 Electrical characteristics (curves) Figure 8. Normalized gate threshold vs temperature Figure 7. Typical capacitance characteristics GIPG270520141143SA C (pF) GIPG270520141144SA VGS(th) (norm) ID=250µA 1.1 1000 1 Ciss 0.9 100 0.8 Coss 0.7 Crss 10 0 20 60 40 0.6 -75 VDS(V) 25 75 125 TJ(°C) Figure 10. Normalized breakdown voltage vs temperature Figure 9. Normalized on-resistance vs temperature GIPG270520141149SA RDS(on) -25 GIPG270520141200SA V(BR)DSS (norm) (norm) ID=1mA VGS=10V 2.5 1.08 2 1.04 1.5 1 1 0.96 0.5 0 -75 -25 25 75 0.92 -75 125 TJ(°C) -25 25 75 125 TJ(°C) Figure 11. Typical reverse diode forward characteristics GIPG270520141210SA VSD (V) TJ=-55°C 0.9 0.8 TJ=25°C 0.7 0.6 TJ=150°C 0.5 0.4 DS10343 - Rev 3 0 0.5 1 1.5 2 2.5 3 ISD(A) page 5/16 STD10P10F6 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS10343 - Rev 3 page 6/16 STD10P10F6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 DPAK (TO-252) type A package information Figure 15. DPAK (TO-252) type A package outline 0068772_A_30 DS10343 - Rev 3 page 7/16 STD10P10F6 DPAK (TO-252) type A package information Table 7. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS10343 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 8/16 STD10P10F6 DPAK (TO-252) type A2 package information 4.2 DPAK (TO-252) type A2 package information Figure 16. DPAK (TO-252) type A2 package outline 0068772_type-A2_rev31 DS10343 - Rev 3 page 9/16 STD10P10F6 DPAK (TO-252) type A2 package information Table 8. DPAK (TO-252) type A2 mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS10343 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 10/16 STD10P10F6 DPAK (TO-252) type A2 package information Figure 17. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_31 DS10343 - Rev 3 page 11/16 STD10P10F6 DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 18. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS10343 - Rev 3 page 12/16 STD10P10F6 DPAK (TO-252) packing information Figure 19. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS10343 - Rev 3 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 13/16 STD10P10F6 Revision history Table 10. Document revision history Date Revision 20-May-2014 1 02-Oct-2014 2 Changes First release. Document status promoted from preliminary to production data Added Section 2.1: "Electrical characteristics (curves)". Updated Section 4.1 DPAK (TO-252) type A package information 26-Apr-2022 3 Added Section 4.2 DPAK (TO-252) type A2 package information Minor text changes. DS10343 - Rev 3 page 14/16 STD10P10F6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DS10343 - Rev 3 page 15/16 STD10P10F6 IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS10343 - Rev 3 page 16/16
STD10P10F6 价格&库存

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STD10P10F6
    •  国内价格
    • 26643+1.90400

    库存:46899