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STD50N03L-1

STD50N03L-1

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-251-3

  • 描述:

    MOSFET N-CH 30V 40A IPAK

  • 数据手册
  • 价格&库存
STD50N03L-1 数据手册
STD50N03L STD50N03L-1 N-CHANNEL 30V - 9.2mΩ - 40A - DPAK/IPAK STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STD50N03L STD50N03L-1 30V 30V 10.5mΩ 10.5mΩ 40A 40A 3 ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device 3 2 1 1 IPAK DPAK Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. Internal schematic diagram Applications ■ Switching applications Order codes Part number Marking Package Packaging STD50N03L D50N03L DPAK Tape & reel STD50N03L-1 D50N03L IPAK Tube October 2006 Rev 2 1/16 www.st.com 16 Contents STD50N03L - STD50N03L-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ................................................ 8 STD50N03L - STD50N03L-1 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25°C 40 A Drain current (continuous) at TC=100°C 36 A Drain current (pulsed) 160 A Total dissipation at TC = 25°C 60 W Derating factor 0.4 W/°C EAS(3) Single pulse avalanche energy 230 mJ TJ Operating junction temperature Storage temperature -55 to 175 °C ID (1) ID IDM (2) PTOT Tstg 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, ID =20A, VDD =15V Table 2. Symbol Thermal data Parameter Value Unit RthJ-Case Thermal resistance junction-case max 2.5 °C/W RthJ-Amb Thermal resistance junction-ambient max 100 °C/W Tj Maximum lead temperature for soldering purpose 275 °C 3/16 Electrical characteristics 2 STD50N03L - STD50N03L-1 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 20A Symbol Ciss Coss Crss Qg Qgs Qgd QOSS (1) RG Max. 30 1 10 µA µA ±100 nA 1 VGS= 5V, ID= 20A Unit V VDS = 30V, Tc=125°C V 9.2 0.012 10.5 0.019 mΩ Ω Typ. Max. Unit Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =25V, f=1MHz, VGS=0 Min. 1434 294 48 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD= 15V, ID = 40A (see Figure 13) 10.4 5.1 3.7 Output charge VDS = 24V ; VGS =0 12.6 nC Gate input resistance f=1MHz Gate Bias Bias=0 Test signal Level=20mV open drain 1.1 Ω VGS = 5V 1. QOSS=COSS*D Vin; COSS= Cgd + Cgd. See Appendix A 4/16 Typ. VDS = 30V IDSS Table 4. Min. 14 nC nC nC STD50N03L - STD50N03L-1 Electrical characteristics Table 5. Switching times Symbol Parameter td(on) tr td(off) tf Table 6. Symbol Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15V, ID= 25A, RG= 4.7Ω, VGS= 4.5V (see Figure 12) VDD= 15V, ID= 25A, RG= 4.7Ω, VGS= 4.5V (see Figure 12) Parameter Test conditions ISDM(1) VSD(2) Forward on voltage ISD= 20A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 40A, di/dt = 100A/µs, VDD= 10 V, Tj = 25°C Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 40A, di/dt = 100A/µs, VDD= 10V, Tj= 150°C trr Qrr IRRM trr Qrr IRRM Typ. Max. Unit 15 125 ns ns 14 45 ns ns Source drain diode Source-drain current Source-drain current (pulsed) ISD Min. (see Figure 17) (see Figure 17) Min. Typ. Max. Unit 40 160 A A 1.3 V 26 15.6 1.2 ns nC A 26.4 18.1 1.4 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/16 Electrical characteristics STD50N03L - STD50N03L-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs temperature Figure 6. Static drain-source on resistance 6/16 STD50N03L - STD50N03L-1 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/16 Test circuit 3 STD50N03L - STD50N03L-1 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/16 Figure 17. Switching time waveform STD50N03L - STD50N03L-1 Appendix A Buck converter Buck converter Figure 18. Power losses estimation The power losses associated with the FETs in a Synchronous Buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. The low side (SW2) device requires: ■ Very low RDS(on) to reduce conduction losses ■ Small Qgls to reduce the gate charge losses ■ Small Coss to reduce losses due to output capacitance ■ Small Qrr to reduce losses on SW1 during its turn-on ■ The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source ■ voltage to avoid the cross conduction phenomenon; The high side (SW1) device requires: ■ Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on the gate ■ Small Qg to have a faster commutation and to reduce gate charge losses Low RDS(on) to reduce the conduction losses. 9/16 Buck converter STD50N03L - STD50N03L-1 Table 7. Power losses High side switching (SW1) Low side switch (SW2) R DS(on)SW1 * I 2L * δ R DS(on)SW2 * I 2L * (1 − δ ) Pconduction Vin * (Q gsth(SW1) + Q gd(SW1) ) * f * Pswitching Recovery (1) Not applicable Conduction Not applicable IL Ig Zero Voltage Switching Vin * Q rr(SW2) * f Pdiode Pgate(QG) PQoss Vf(SW2) * I L * t deadtime * f Q g(SW1) * Vgg * f Q gls(SW2) * Vgg * f Vin * Q oss(SW1) * f Vin * Q oss(SW2) * f 2 2 1. Dissipated by SW1 during turn-on Table 8. Paramiters meaning Parameter d 10/16 Meaning Duty-cycle Qgsth Post threshold gate charge Qgls Third quadrant gate charge Pconduction On state losses Pswitching On-off transition losses Pdiode Conduction and reverse recovery diode losses Pgate Gate drive losses PQoss Output capacitance losses STD50N03L - STD50N03L-1 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 11/16 Package mechanical data STD50N03L - STD50N03L-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 12/16 STD50N03L - STD50N03L-1 Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MAX. MIN. A A1 A2 B b4 MIN. 2.2 0.9 0.03 0.64 5.2 TYP 2.4 1.1 0.23 0.9 5.4 0.086 0.035 0.001 0.025 0.204 0.094 0.043 0.009 0.035 0.212 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 0.45 0.48 6 0.6 0.6 6.2 0.017 0.019 0.236 0.023 0.023 0.244 6.6 0.252 5.1 6.4 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.260 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 13/16 Packaging mechanical data 5 STD50N03L - STD50N03L-1 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD50N03L - STD50N03L-1 6 Revision history Revision history Table 9. Revision history Date Revision Changes 31-Jul-2006 1 Initial release. 27-Oct-2006 2 Modified Figure 1.: Safe operating area on page 6 15/16 STD50N03L - STD50N03L-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16
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