STF5N52K3

STB5N52K3, STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK Features Order codes STB5N52K3 STD5N52K3 STF5N52K3 STP5N52K3 STU5N52K3 VDSS 525 V RDS(on) max < 1.5 Ω ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected ID Pw 4.4 A 70 W 70 W 25 W 70 W 70 W 3 3 3 1 2 TO-220 1 1 DPAK TO-220FP 3 3 2 1 1 IPAK Figure 1. 2 D²PAK Internal schematic diagram D(2) Application Switching applications Description G(1) These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. S(3) AM01476v1 Device summary Order codes Marking Package STB5N52K3 D²PAK STD5N52K3 DPAK Packaging Tape and reel STF5N52K3 5N52K3 TO-220FP STP5N52K3 TO-220 STU5N52K3 IPAK December 2010 Doc ID 16952 Rev 2 Tube 1/23 www.st.com 23 Contents STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 .............................................. 9 Doc ID 16952 Rev 2 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220 D²PAK Unit DPAK IPAK VDS Drain- source voltage 525 VGS Gate- source voltage ± 30 TO-220FP V V (1) ID Drain current (continuous) at TC = 25 °C 4.4 ID Drain current (continuous) at TC = 100 °C 2.77 2.77 (1) A 17.6 17.6(1) A 70 25 W IDM (2) PTOT Drain current (pulsed) Total dissipation at TC = 25 °C 4.4 A IAR Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) 2.2 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 100 mJ Peak diode recovery voltage slope 12 V/ns dv/dt(3) VISO Insulation withstand voltage (AC) TJ Tstg Operating junction temperature Storage temperature 2500 - 55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 4.4 A, di/dt ≤ 100 A/µs,VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Thermal data Value Symbol Parameter Unit TO-220 D²PAK TO-220FP IPAK DPAK Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-pcb max. TJ Maximum lead temperature for soldering purpose 1.79 5 1.79 62.5 100 30 300 Doc ID 16952 Rev 2 °C/W °C/W 50 300 °C/W °C/W 3/23 Electrical characteristics 2 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 525 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) 10 µA 3.75 4.5 V 1.2 1.5 Ω Min. Typ. Max. Unit VGS = ± 20 V; VDS=0 VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance Table 5. Symbol 3 VGS = 10 V, ID = 2.2 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 545 45 8 - pF pF pF Equivalent output capacitance VDS = 0 to 420 V, VGS = 0 - 33 - pF Rg Gate input resistance f=1 MHz open drain - 4.7 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 420 V, ID = 4.4 A, VGS = 10 V (see Figure 19) - 17 3 10 - nC nC nC Ciss Coss Crss Coss eq. (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/23 Doc ID 16952 Rev 2 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Electrical characteristics Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 420 V, ID = 4.4 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Min. Typ. - 9 11 29 16 Max Unit - ns ns ns ns Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Min. Typ. Max Unit - 4.4 17.6 A A 1.6 V Forward on voltage ISD = 4.4 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.4 A, di/dt = 100 A/µs VDD= 60 V (see Figure 20) - 210 1.3 12 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.4 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 20) - 240 1.6 13 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1 mA (open drain) Min. 30 Typ. Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 16952 Rev 2 5/23 Electrical characteristics STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area TO-220, D²PAK Figure 3. AM08837v1 ID (A) 10 is 1 in th 10µs is ea ar 100µs n) o S( D ax R 1ms n m tio by ra pe ited O im L 10ms 0.1 0.01 0.1 Figure 4. Thermal impedance TO-220, D²PAK Tj=150°C Tc=25°C Single pulse 10 1 100 VDS(V) Safe operating area TO-220FP Figure 5. Thermal impedance TO-220FP Figure 7. Thermal impedance DPAK, IPAK AM08838v1 ID (A) 10 is ea s hi t 1 x in n ma tio by a r pe ed O imit L R 10µs ) ar on S( D 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area DPAK, IPAK AM08839v1 ID (A) 10µs 10 is ea ) ar S(on D R t in ax n io y m t b ra pe ed O imit L 100µs s hi 1 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 6/23 1 10 100 VDS(V) Doc ID 16952 Rev 2 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics AM08840v1 ID (A) AM08841v1 ID (A) 7 10 VGS=10V VDS=15V 6 7V 8 5 6 4 6V 3 4 2 2 1 5V 0 0 5 10 15 20 Figure 10. Normalized BVDSS vs temperature AM08842v1 BVDSS (norm) 0 0 VDS(V) 25 ID=1mA 1.10 1 2 3 4 5 6 7 8 9 VGS(V) Figure 11. Static drain-source on resistance AM08843v1 RDS(on) (Ω) 1.45 VGS=10V 1.40 1.35 1.05 1.30 1.00 1.20 1.25 1.15 0.95 1.10 1.05 0.90 -75 25 -25 75 TJ(°C) 125 1.00 0 1.0 2.0 4.0 3.0 ID(A) Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations AM08844v1 VGS (V) VDD=420V ID=4.4A 12 VDS 10 VGS AM08845v1 C (pF) 400 350 1000 Ciss 300 8 250 6 200 100 150 4 100 2 Crss 50 0 0 Coss 10 5 10 15 20 0 25 Qg(nC) Doc ID 16952 Rev 2 1 0.1 1 10 100 VDS(V) 7/23 Electrical characteristics STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Figure 14. Normalized gate threshold voltage vs temperature AM08846v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM08847v1 RDS(on) (norm) 1.10 2.5 ID=50µA 2.0 1.00 1.5 0.90 1.0 0.80 0.5 0.70 -75 25 -25 75 125 Figure 16. Source-drain diode forward characteristics 25 -25 75 125 TJ(°C) Figure 17. Maximum avalanche energy vs starting Tj AM08848v1 VSD (V) 0.9 0 -75 TJ(°C) TJ=-50°C AM08849v1 EAS (mJ) 110 0.8 100 TJ=25°C ID=4.4A 90 0.7 0.6 80 70 TJ=150°C 0.5 60 0.4 50 40 0.3 30 0.2 20 0.1 0 0 8/23 1 2 3 4 5 ISD(A) Doc ID 16952 Rev 2 10 0 0 20 40 60 80 100 120 140 TJ(°C) STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 16952 Rev 2 10% AM01473v1 9/23 Package mechanical data 4 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/23 Doc ID 16952 Rev 2 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 24. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 16952 Rev 2 11/23 Package mechanical data Table 10. STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 DPAK (TO-252) mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R V2 12/23 Max. 0.20 0° 8° Doc ID 16952 Rev 2 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Package mechanical data Figure 25. DPAK (TO-252) drawing 0068772_G Doc ID 16952 Rev 2 13/23 Package mechanical data Table 11. STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/23 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 16952 Rev 2 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Package mechanical data Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 16952 Rev 2 15/23 Package mechanical data Table 12. STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 16/23 Max. 0.4 0° 8° Doc ID 16952 Rev 2 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Package mechanical data Figure 27. D²PAK (TO-263) drawing 0079457_P Table 13. IPAK (TO-251) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 Doc ID 16952 Rev 2 17/23 Package mechanical data Table 13. STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 IPAK (TO-251) mechanical data H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10 o 1.00 Figure 28. IPAK (TO-251) drawing 0068771_H 18/23 AM09214V1 Doc ID 16952 Rev 2 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 5 Package mechanical data Package mechanical data Table 14. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 Figure 29. D²PAK footprint(a) 16.90 10.30 5.08 1.30 8.90 3.70 Footprint a. All dimension are in millimeters Doc ID 16952 Rev 2 19/23 Package mechanical data Table 15. STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 Figure 30. DPAK footprint(b) 6.7 3 3 1.6 2.3 6.7 2.3 1.6 b. All dimension are in millimeters 20/23 Doc ID 16952 Rev 2 AM08850v1 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Package mechanical data Figure 31. Tape for DPAK (TO-252) and D²PAK (TO-263) 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 P2 D T E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 D1 P1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 32. Reel for DPAK (TO-252) and D²PAK (TO-263) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Tape slot In core for Full radius Tape start G measured At hub AM08851v1 Doc ID 16952 Rev 2 21/23 Revision history 6 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Revision history Table 16. 22/23 Document revision history Date Revision Changes 05-Jan-2010 1 First release. 14-Dec-2010 2 Document status promoted from preliminary data to datasheet. Doc ID 16952 Rev 2 STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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