STGB30V60F

STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off TAB • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution 3 3 1 1 D2PAK 2 TO-220 • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters Figure 1. Internal schematic diagram • Uninterruptible power supply • Welding • Power factor correction C (2, TAB) • Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order codes Marking Package Packaging STGB30V60F GB30V60F D2PAK Tape and reel STGP30V60F GP30V60F TO-220 Tube April 2014 This is information on a product in full production. DocID025049 Rev 4 1/19 www.st.com 19 Contents STGB30V60F, STGP30V60F Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 D²PAK, STGB30V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220, STGP30V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 DocID025049 Rev 4 STGB30V60F, STGP30V60F 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 60 A IC Continuous collector current at TC = 100 °C 30 A ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 260 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C VCES TJ Parameter 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case 0.58 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W DocID025049 Rev 4 3/19 Electrical characteristics 2 STGB30V60F, STGP30V60F Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. 4/19 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.85 VGE = 15 V, IC = 30 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 30 A TJ = 175 °C VGE(th) Max. 600 VGE = 15 V, IC = 30 A VCE(sat) Typ. 2.3 2.15 V 2.35 7 V VCE = 600 V 25 µA VGE = ± 20 V 250 nA DocID025049 Rev 4 5 6 STGB30V60F, STGP30V60F Electrical characteristics Table 5. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 30 A, VGE = 15 V, see Figure 22 Qge Gate-emitter charge Qgc Gate-collector charge Min. Typ. Max. Unit - 3750 - pF - 120 - pF - 77 - pF - 163 - nC - 28 - nC - 72 - nC Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 45 - ns Current rise time - 16 - ns - 1500 - A/µs - 189 - ns - 19 - ns Turn-on current slope VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, see Figure 21 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 383 - µJ Eoff(2) Turn-off switching losses - 233 - µJ Total switching losses - 616 - µJ Turn-on delay time - 42 - ns Current rise time - 17 - ns - 1337 - A/µs - 193 - ns - 32 - ns Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 21 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 794 - µJ Eoff(2) Turn-off switching losses - 378 - µJ Total switching losses - 1172 - µJ Ets 1. Parameter Energy losses include reverse recovery of the external diode. The diode is the same of the copacked STGW30V60DF. 2. Turn-off losses include also the tail of the collector current. DocID025049 Rev 4 5/19 Electrical characteristics 2.1 STGB30V60F, STGP30V60F Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature AM17409v1 Ptot (W) Figure 3. Collector current vs. case temperature AM17410v1 IC (A) VGE =15 V, TJ = 175 °C 60 250 50 200 40 150 30 100 20 50 0 0 10 25 50 0 0 75 100 125 150 175 TC(°C) Figure 4. Output characteristics (TJ=25°C) 25 50 75 100 125 150 175 Figure 5. Output characteristics (TJ=175°C) AM17411v1 IC (A) 120 VGE=15V 100 AM17412v1 IC (A) 120 13V VGE=15V 13V 100 11V 80 80 60 60 9V 40 20 TC(°C) 11V 9V 40 20 7V 0 0 1 2 3 VCE(V) 4 Figure 6. VCE(sat) vs. junction temperature AM17413v1 VCE(sat) (V) 3.2 VGE=15V IC=60A 3.0 2.6 IC=30A 2.4 2.2 2.0 IC=15A 1.8 1.6 6/19 1 3 2 4 VCE(V) Figure 7. VCE(sat) vs. collector current VCE(sat) (V) 3.2 3.0 AM17414v1 Tj=175°C VGE=15V 2.8 2.6 2.8 1.4 1.2 -50 0 0 0 50 100 150 TC(°C) Tj=25°C 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 DocID025049 Rev 4 Tj=-40°C 10 20 30 40 50 60 IC(A) STGB30V60F, STGP30V60F Electrical characteristics Figure 8. Normalized VGE(th) vs junction temperature AM17419v1 VGE(th) (norm) VCE=VGE IC=1mA Figure 9. Normalized V(BR)CES vs. junction temperature AM17420v1 V(BR)CES (norm) IC=2mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 50 0 150 100 TC(°C) Figure 10. Capacitance variations 50 0 100 150 TC(°C) Figure 11. Gate charge vs. gate-emitter voltage AM17421v1 C(pF) 0.9 -50 10000 AM17422v1 VGE(V) VCC = 480 V IC = 30 A 16 Cies 14 12 1000 10 8 Coes 6 Cres 100 4 2 10 0.1 10 1 Figure 12. Switching losses vs. collector current AM17423v1 E(μJ) 2000 1800 Eon VCC=400V, VGE=15V Rg=10Ω, Tj=175°C 0 0 VCE(V) 25 50 75 100 125 150 175 Qg(nC) Figure 13. Switching losses vs. gate resistance AM17424v1 E(μJ) VCC=400V, VGE=15V IC=30A, Tj=175°C 1200 Eon 1600 1000 1400 1200 800 1000 Eoff 800 Eoff 600 600 400 200 0 0 400 200 10 20 30 40 50 60 IC(A) DocID025049 Rev 4 0 10 20 30 40 Rg(Ω) 7/19 Electrical characteristics STGB30V60F, STGP30V60F Figure 14. Switching losses vs. junction temperature AM17425v1 E(μJ) Eon VCC=400V, VGE=15V IC=30A, Rg=10Ω 800 Figure 15. Switching losses vs. collector emitter voltage 1100 700 AM17426v1 E(μJ) Eon VGE=15V, Tj=175°C IC=30A, Rg=10Ω 900 600 700 500 Eoff 400 500 Eoff 300 300 200 100 0 50 25 75 100 125 150 TJ(°C) Figure 16. Switching times vs. collector current t(ns) AM17427v1 VCC=400V, VGE=15V 100 150 250 300 350 400 450 VCE(V) Figure 17. Switching times vs. gate resistance AM17428v1 t(ns) 1000 Tj=175°C, Rg=10Ω 200 tdoff VCC=400V, VGE=15V Tj=175°C, IC=30A tdoff 100 tdon tr 100 tdon tf tf tr 10 0 20 10 30 40 50 60 IC(A) 10 0 Figure 18. Transfer characteristics 20 10 30 Rg(Ω) Figure 19. Safe operating area AM17417v1 IC (A) 40 AM17416v1 IC (A) Tj=-40°C 100 Tj=175°C 100 Tj=25°C 10μs 80 10 100μs 60 1ms 1 40 0 7 8/19 0.1 VCE = 10 V 20 8 9 10 11 VGE(V) 0.01 1 DocID025049 Rev 4 Single pulse, Tc=25°C Tj