STGB7NB40LZT4

STGB7NB40LZ N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB7NB40LZ ■ ■ ■ ■ ■ ■ VCES VCE(sat) IC CLAMPED < 1.50 V 14 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 D2PAK c u d DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS ■ AUTOMOTIVE IGNITION ) s ( ct Symbol r P e Parameter VCES Collector-Emitter Voltage (VGS = 0) VECR Reverse Battery Protection VGE Gate-Emitter Voltage IC RG PTOT ECL EECAV Tstg Tj March 2003 e t le Value Unit CLAMPED V 20 V CLAMPED V Collector Current (continuous) at 100°C 14 A Minimum External Gate Resistor 500 Ω t e l o s b O o r P INTERNAL SCHEMATIC DIAGRAM o s b O - u d o ABSOLUTE MAXIMUM RATINGS ) s t( Total Dissipation at TC = 25°C 100 W Derating Factor 0.66 W/°C Single Pulse Collector to Emitter Avalanche Energy IC= 13 A ; Tj= 150°C (see fig.1-2) 130 mJ Reverse Avalanche Energy IC = 7 A ;f= 100 Hz ; Tc = 25°C 10 mJ –55 to 175 °C Storage Temperature Operating Junction Temperature 1/8 STGB7NB40LZ THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max (free air) 62.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED) OFF Symbol Min. Typ. Max. Unit BV(CES) Collector-Emitter Clamped Voltage IC = 10 mA, VGE = 0, Tc= - 40°C to 150°C; RG= 1 KΩ 370 400 430 V BV(ECS) Emitter Collector Break-down Voltage IEC = 75 mA, VGE = 0, 20 27 BVGE Gate Emitter Break-down Voltage IG = ± 2 mA 12 ICES Collector-Emitter Leakage Current Gate-Emitter Leakage Current (VCE = 0) IGES Parameter Test Conditions 16 V VGE = 200 V, VGE = 0, RG= 1 KΩ Tc=25°C Tc=150°C 25 250 µA µA VGE = ± 10 V , VCE = 0 1000 µA Max. Unit 2.2 1.8 V V 1.3 1.50 1.9 V V 10 20 30 KΩ Min. Typ. Max. Unit ON (1) Symbol VGE(th) VCE(SAT) RGE Parameter Min. VCE = VGE, IC = 1 mA, Tc=25°C VCE = VGE, IC = 1 mA, Tc=150°C 1.2 0.75 Collector-Emitter Saturation Voltage VGE =4.5 V, IC = 7 A, Tj= 25°C VGE =5.0 V, IC = 14 A, Tc= 25°C e t le Gate Emitter Resistance DYNAMIC Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg ) s ( ct Parameter u d o r P e Gate Charge t e l o o s b O Test Conditions c u d o r P Test Conditions Gate Threshold Voltage Symbol V VCE = 25 V, f = 1 MHz, VGE = 0 Typ. ) s t( 910 VCE = 40 V, IC = 7 A, VGE = 5 V pF 80 pF 15 pF 22 nC SWITCHING ON s b O Symbol 2/8 Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Delay Time Current Rise Time VCE = 14 V, RG =1KΩ , RL = 1Ω, VGE =5 V 0.9 4.5 µs µs td(off) tf Delay Time Current Fall Time VCE = 300 V, RG =1KΩ , RL = 46Ω, VGE =5 V 4.4 3.6 µs µs STGB7NB40LZ Thermal Impedance Transfer Characteristics Output Characteristics c u d e t le ) s ( ct u d o Normalized Gate Threshold Voltage vs Temp. r P e ) s t( o r P o s b O - Transconductance t e l o s b O 3/8 STGB7NB40LZ Normalized Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Gate-Emitter Voltage Capacitance Variations Gate-Charge vs Gate-Emitter Voltage c u d e t le ) s ( ct u d o Normalized Break-down Voltage vs Temp. r P e t e l o s b O 4/8 ) s t( o r P o s b O - Clamping Voltage vs Gate Resistance STGB7NB40LZ Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 5/8 STGB7NB40LZ D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10.4 E1 0.393 8.5 4.88 5.28 0.192 L 15 15.85 0.590 L2 1.27 1.4 L3 1.4 1.75 M 2.4 ) s ( ct 0º e t le so b O 3.2 0.4 V2 o r P 0.334 G R c u d 0.315 10 ) s t( 0.368 0.208 0.625 0.050 0.055 0.055 0.068 0.094 0.126 0.015 8º u d o r P e t e l o 3 s b O 6/8 1 STGB7NB40LZ D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* c u d ) s t( REEL MECHANICAL DATA DIM. MIN. e t le A so t c u TAPE MECHANICAL DATA DIM. mm inch MAX. MIN. 10.7 0.413 0.421 15.9 0.618 0.626 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 D bs 15.7 1.5 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type B 1.5 C 12.8 D 20.2 G 24.4 N 100 T MAX. inch MIN. 330 MAX. 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. t e l o B0 O 10.5 od r P e MIN. A0 (s) b O - o r P mm 1.574 0.933 0.956 7/8 STGB7NB40LZ c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics s b O © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8