STGB7H60DF,
STGF7H60DF, STGP7H60DF
Trench gate field-stop IGBT, H series
600 V, 7 A high speed
Datasheet - production data
Features
TAB
• High speed switching
• Tight parameters distribution
3
1
• Safe paralleling
D²PAK
• Low thermal resistance
• Short-circuit rated
TAB
• Ultrafast soft recovery antiparallel diode
3
3
1
2
1
2
TO-220
TO-220FP
Applications
• Motor control
• UPS, PFC
Figure 1. Internal schematic diagram
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
C (2, TAB)
G (1)
E (3)
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STGB7H60DF
GB7H60DF
D²PAK
Tape and reel
STGF7H60DF
GF7H60DF
TO-220FP
Tube
STGP7H60DF
GP7H60DF
TO-220
Tube
June 2015
This is information on a product in full production.
DocID027555 Rev 2
1/25
www.st.com
Contents
STGB7H60DF, STGF7H60DF, STGP7H60DF
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Test circuits
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5
2/25
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.1
D²PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2
D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.3
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.4
TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DocID027555 Rev 2
STGB7H60DF, STGF7H60DF, STGP7H60DF
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
IC
ICP (2)
VGE
Parameter
TO-220
TO-220FP
D²PAK
Collector-emitter voltage (VGE = 0)
600
V
Continuous collector current at TC = 25 °C
14
14(1)
Continuous collector current at TC = 100 °C
7
7(1)
Pulsed collector current
28
28(1)
Gate-emitter voltage
Unit
±20
A
A
V
Continuous forward current TC = 25 °C
14
14(1)
Continuous forward current at TC = 100 °C
7
7(1)
IFP(2)
Pulsed forward current
28
28(1)
A
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s, TC = 25 °C)
2500
V
PTOT
Total dissipation at TC = 25 °C
24
W
TSTG
Storage temperature range
- 55 to 150
Operating junction temperature
- 55 to 175
IF
TJ
88
A
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Symbol
Parameter
TO-220
D²PAK
TO-220FP
Unit
RthJC
Thermal resistance junction-case IGBT
1.7
6.2
°C/W
RthJC
Thermal resistance junction-case diode
2.8
6.25
°C/W
RthJA
Thermal resistance junction-ambient
DocID027555 Rev 2
62.5
°C/W
3/25
25
Electrical characteristics
2
STGB7H60DF, STGF7H60DF, STGP7H60DF
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0 V)
IC = 2 mA
Min.
Gate threshold voltage
VCE = VGE, IC = 250 µA
ICES
Collector cut-off current
(VGE = 0 V)
IGES
Gate-emitter leakage
current (VCE = 0 V)
Unit
V
1.5
VGE = 15 V, IC = 7 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 7 A
TJ = 175 °C
VGE(th)
Max.
600
VGE = 15 V, IC = 7 A
VCE(sat)
Typ.
1.95
1.6
V
1.7
4.8
6.2
6.9
V
VCE = 600 V
25
µA
VGE = ±20 V
250
nA
Unit
Table 5. Dynamic
Symbol
4/25
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0 V
VCC = 480 V, IC = 7 A,
VGE = 15 V
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID027555 Rev 2
Min.
Typ.
Max.
-
1050
-
-
51
-
-
23
-
-
46
-
-
7
-
-
21
-
pF
nC
STGB7H60DF, STGF7H60DF, STGP7H60DF
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
td(on)
tr
Parameter
Test conditions
Turn-on delay time
VCE = 400 V, IC = 7 A,
RG = 47 Ω, VGE = 15 V
Current rise time
(di/dt)on
td(on)
tr
Turn-on current slope
Turn-on delay time
Current rise time
(di/dt)on
tr(Voff)
td(off)
tf
Turn-on current slope
VCE = 400 V, IC = 7 A,
RG = 47 Ω, VGE = 15 V
TJ = 175 °C
Off voltage rise time
VCE = 400 V, IC = 7 A,
RG = 47 Ω, VGE = 15 V
Turn-off delay time
Current fall time
tr(Voff)
Off voltage rise time
td(off)
Turn-off delay time
tf
Current fall time
tsc
Short-circuit withstand time
Min.
Typ.
Max.
Unit
-
30
-
ns
-
12.2
-
ns
-
459
-
A/µs
-
30
-
ns
-
12.8
-
ns
-
440
-
A/µs
-
24
-
-
160
-
-
69
-
ns
VCE = 400 V, IC = 7 A,
RG = 47 Ω, VGE = 15 V
TJ = 175 °C
-
31
-
-
164
-
-
99
-
VCC ≤ 360 V, VGE = 15 V,
RG = 47 Ω
-
5
-
µs
Min.
Typ.
Max.
Unit
-
99
-
-
100
-
-
199
-
-
202
-
-
149
-
-
351
-
ns
Table 7. Switching energy (inductive load)
Symbol
Eon (1)
Eoff
(2)
Ets
Test conditions
Turn-on switching losses
Turn-off switching losses
Turn-on switching losses
Eoff (2)
Turn-off switching losses
Ets
VCE = 400 V, IC = 7 A,
RG = 47 Ω, VGE = 15 V
Total switching losses
(1)
Eon
1.
Parameter
Total switching losses
VCE = 400 V, IC = 7 A,
RG = 47 Ω, VGE = 15 V
TJ = 175 °C
µJ
µJ
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
DocID027555 Rev 2
5/25
25
Electrical characteristics
STGB7H60DF, STGF7H60DF, STGP7H60DF
Table 8. Collector-emitter diode
Symbol
6/25
Parameter
Test conditions
IF = 7 A
VF
Forward on-voltage
trr
Reverse recovery time
Min.
Typ.
Max.
-
1.5
2.1
V
IF = 7 A, TJ = 175 °C
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
VCC = 400 V; IF = 7 A;
diF/dt = 100 A/µs
VCC = 400 V; IF = 7 A;
diF/dt = 100 A/µs
TJ = 175 °C
DocID027555 Rev 2
Unit
1.15
-
136
ns
-
104
nC
-
2.25
A
-
154
ns
-
388
nC
-
4.6
A
STGB7H60DF, STGF7H60DF, STGP7H60DF
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature for D2PAK and TO-220
3727
:
,*%7+')33'7
Figure 3. Collector current vs. case temperature
for D2PAK and TO-220
,&
$
,*%7+')3&&7
9*(97-&
9*(97-&
7&&
Figure 4. Power dissipation vs. case
temperature for TO-220FP
3727
:
,*%7+'))3'7
9*(97-&
,&
$
7&&
Figure 6. Output characteristics (TJ = 25°C)
,&
$
,*%7+')32&
9*( 9
9
9
,&
$
,*%7+')32&
9*( 9
9
9
9
9
7&&
Figure 7. Output characteristics (TJ = 175°C)
7&&
,*%7+'))&&7
9*(97-&
9
Figure 5. Collector current vs. case temperature
for TO-220FP
9&(9
DocID027555 Rev 2
9
9&(9
7/25
25
Electrical characteristics
STGB7H60DF, STGF7H60DF, STGP7H60DF
Figure 8. VCE(sat) vs. junction temperature
9&(VDW
9
9&(VDW
9
,*%7+')39&(7
9*( 9
Figure 9. VCE(sat) vs. collector current
9*( 9
,& $
7- &
7- &
,& $
7- &
,& $
7-&
Figure 10. Collector current vs. switching
frequency for D2PAK and TO-220
,&
$
7& &
5HFWDQJXODUFXUUHQWVKDSH
GXW\F\FOH 9&& 9
5* 9*( 97- &
,&$
,*%7+')))&&6
7& &
7& &
7& &
Figure 11. Collector current vs. switching
frequency for TO-220FP
,&
$
,*%7+')3&&6
,*%7+')39&(&
5HFWDQJXODUFXUUHQWVKDSH
GXW\F\FOH 9&& 9
5* 9*( 97- &
IN+]
IN+]
Figure 12. Forward bias safe operating area for Figure 13. Forward bias safe operating area for
D2PAK and TO-220
TO-220FP
,&
$
,&
$
,*%7+')3)62$
,*%7+')))62$
WS V
WS V
WS V
WS V
VLQJOHSXOVH7& &
7-&9*( 9
8/25
WS PV
9&(9
WS V
WS V
VLQJOHSXOVH7& &
7-&9*( 9
DocID027555 Rev 2
WS PV
9&(9
STGB7H60DF, STGF7H60DF, STGP7H60DF
Figure 14. Transfer characteristics
,&
$
Electrical characteristics
Figure 15. Diode VF vs. forward current
9)
9
,*%7+')37&+
,*%7+')3'9)
9&( 9
7- &
7- &
7- &
7- &
7- &
9*(9
Figure 16. Normalized VGE(th) vs. junction
temperature
9*(WK
QRUP
,& ȝ$9&( 9*(
,)$
Figure 17. Normalized V(BR)CES vs. junction
temperature
9%5&(6
QRUP
,*%7(,19*(
,*%7(,19%5
,& P$
7-&
Figure 18. Capacitance variation
&
S)
7-&
Figure 19. Gate charge vs. gate-emitter voltage
,*%7+')3&95
9*(
9
&,(6
,*%7+')3*&*(
9&& 9,& $,* P$
&2(6
I 0+]
&5(6
9&(9
DocID027555 Rev 2
4JQ&
9/25
25
Electrical characteristics
STGB7H60DF, STGF7H60DF, STGP7H60DF
Figure 20. Switching loss vs. collector current
(
P-
(
P-
,*%7+')36/&
9&& 95*
9*( 97- &
Figure 21. Switching loss vs. gate resistance
,*%7+')36/*
9&& 9,& $
9*( 97- &
(21
(21
(2))
(2))
,&$
Figure 22. Switching loss vs. temperature
(
P-
5*
Figure 23. Switching loss vs. collector-emitter
voltage
(
P-
,*%7+')36/7
9&& 9,& $
5* 9*( 9
,*%7+')36/9
,& $5*
9*( 97- &
(21
(2))
(21
(2))
7-&
9&(9
Figure 24. Short circuit time and current vs. VGE Figure 25. Switching times vs. collector current
W
V
,*%7+')36&9 ,6&
W6&
$
9&&97-&
W
QV
,*%7+')367&
WGRII
10/25
,6&
9*(9
WI
WGRQ
WU
9&& 99*( 9
5* 7- &
DocID027555 Rev 2
,&$
STGB7H60DF, STGF7H60DF, STGP7H60DF
Figure 26. Switching times vs. gate resistance
W
QV
,*%7+')3675
9&& 99*( 9
,& $7- &
Electrical characteristics
Figure 27. Reverse recovery current vs. diode
current slope
,UUP
$
,*%7+')355&
9&& 99*( 9
,) $7- &
WGRII
W
I
WGRQ
W
U
5*
Figure 28. Reverse recovery time vs. diode
current slope
WUU
QV
,*%7+')3557
9&& 99*( 9
,) $7- &
GLGW$V
Figure 29. Reverse recovery charge vs. diode
current slope
4UU
&
,*%7+')3554
9&& 99*( 9
,) $7- &
GLGW$V
GLGW$V
Figure 30. Reverse recovery energy vs. diode
current slope
(UU
P-
,*%7+')355(
9&& 99*( 9
,) $7- &
GLGW$V
DocID027555 Rev 2
11/25
25
Electrical characteristics
STGB7H60DF, STGF7H60DF, STGP7H60DF
Figure 31. Thermal impedance for D2PAK and TO-220 IGBT
=WK727B%
.
=WK
=WK N
5
N5 WKMF
WKM&
įį WWS SϨ
Ϩ
WSS
ϨϨ
WSV
Figure 32. Thermal impedance for D2PAK and TO-220 diode
*&
.
į
į
į
=WK
=WKN
5
N5WKMF
WKM&
įį WWSSϨ
Ϩ
į
į
į
WSS
ϨϨ
6,1*/(38/6(
12/25
DocID027555 Rev 2
W SV
STGB7H60DF, STGF7H60DF, STGP7H60DF
Electrical characteristics
Figure 33. Thermal impedance for TO-220FP IGBT
=WK72)7B%
=WK
N
5
=
N5 WKMF
WK
WKM&
įį WWS SϨ
Ϩ
WSS
ϨϨ
WSV
Figure 34. Thermal impedance for TO-220FP diode
.
*&
DocID027555 Rev 2
WSV
13/25
25
Test circuits
3
STGB7H60DF, STGF7H60DF, STGP7H60DF
Test circuits
Figure 35. Test circuit for inductive load
switching
Figure 36. Gate charge test circuit
9&&
&
$
$
9
Nȍ
/ )
*
(
%
%
)
&
*
Nȍ
Q)
5*
)
9&&
9L9*0$;
'87
)
(
,* &2167
ȍ
'87
Nȍ
9*
Nȍ
Nȍ
3:
$0 Y
Figure 37. Switching waveform
$0Y
Figure 38. Diode reverse recovery waveform
90%
GLGW
4UU
10%
VG
90%
VCE
WUU
,)
WV
WI
10%
Tr(Voff)
90%
IC
Tr(Ion)
Ton
,550
10%
Td(off)
Td(on)
W
,550
Tcross
Tf
9550
Toff
GYGW
AM01506v1
14/25
DocID027555 Rev 2
$0Y
STGB7H60DF, STGF7H60DF, STGP7H60DF
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1
D²PAK package information
Figure 39. D²PAK (TO-263) type A package outline
DocID027555 Rev 2
15/25
25
Package information
STGB7H60DF, STGF7H60DF, STGP7H60DF
Table 9. D²PAK (TO-263) type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
16/25
Max.
0.4
0°
8°
DocID027555 Rev 2
STGB7H60DF, STGF7H60DF, STGP7H60DF
Package information
Figure 40. D²PAK recommended footprint(a)
)RRWSULQW
a. All dimension are in millimeters
DocID027555 Rev 2
17/25
25
Package information
4.2
STGB7H60DF, STGF7H60DF, STGP7H60DF
D²PAK packing information
Figure 41. D²PAK tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
K0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
18/25
DocID027555 Rev 2
STGB7H60DF, STGF7H60DF, STGP7H60DF
Package information
Figure 42. D²PAK reel outline
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
G measured at hub
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 10. D²PAK tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID027555 Rev 2
Min.
Max.
330
13.2
26.4
30.4
19/25
25
Package information
4.3
STGB7H60DF, STGF7H60DF, STGP7H60DF
TO-220FP package information
Figure 43. TO-220FP package outline
7012510_Rev_K_B
20/25
DocID027555 Rev 2
STGB7H60DF, STGF7H60DF, STGP7H60DF
Package information
Table 11. TO-220FP package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID027555 Rev 2
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25
Package information
4.4
STGB7H60DF, STGF7H60DF, STGP7H60DF
TO-220 package information
Figure 44. TO-220 type A package outline
BW\SH$B5HYB7
22/25
DocID027555 Rev 2
STGB7H60DF, STGF7H60DF, STGP7H60DF
Package information
Table 12. TO-220 type A package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID027555 Rev 2
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Revision history
5
STGB7H60DF, STGF7H60DF, STGP7H60DF
Revision history
Table 13. Document revision history
Date
Revision
24-Feb-2015
1
Initial release.
2
Text and formatting changes throughout document
In Section 1: Electrical ratings
- updated Table 3
In Section 2: Electrical characteristics
- updated Table 4, Table 5, Table 6, Table 7 and Table 8
- added Section 2.1: Electrical characteristics (curves)
05-Jun-2015
24/25
Changes
DocID027555 Rev 2
STGB7H60DF, STGF7H60DF, STGP7H60DF
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