STGP30V60DF

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 1 1 D²PAK TO-220 2 • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling TAB • Low thermal resistance 2 3 3 • Very fast soft recovery antiparallel diode 2 1 1 Applications TO-3P TO-247 Figure 1. Internal schematic diagram • Photovoltaic inverters • Uninterruptible power supply • Welding C (2, TAB) • Power factor correction • Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order codes Marking Package Packaging STGB30V60DF GB30V60DF D²PAK Tape and reel STGP30V60DF GP30V60DF TO-220 Tube STGW30V60DF GW30V60DF TO-247 Tube STGWT30V60DF GWT30V60DF TO-3P Tube October 2013 This is information on a product in full production. DocID024361 Rev 4 1/22 www.st.com 22 Electrical ratings 1 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 60 A IC Continuous collector current at TC = 100 °C 30 A ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 60 A IF Continuous forward current at TC = 100 °C 30 A IFP(1) Pulsed forward current 120 A PTOT Total dissipation at TC = 25 °C 258 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C Value Unit VCES TJ Parameter 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol 2/22 Parameter RthJC Thermal resistance junction-case IGBT 0.58 °C/W RthJC Thermal resistance junction-case diode 2.08 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID024361 Rev 4 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 2 Electrical characteristics Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VGE = 15 V, IC = 30 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 30 A TJ = 175 °C Forward on-voltage Unit V 1.85 2.3 2.15 V 2.35 IF = 30 A VF Max. 600 VGE = 15 V, IC = 30 A VCE(sat) Typ. 2 2.6 V IF = 30 A, TJ = 125 °C 1.7 V IF = 30 A, TJ = 175 °C 1.6 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 7 V VCE = 600 V 25 μA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 30 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge DocID024361 Rev 4 Min. Typ. Max. Unit - 3750 - pF - 120 - pF - 77 - pF - 163 - nC - 28 - nC - 72 - nC 3/22 Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 45 - ns Current rise time - 16 - ns - 1500 - A/μs - 189 - ns - 19 - ns Turn-on current slope VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 383 - μJ Eoff(2) Turn-off switching losses - 233 - μJ Total switching losses - 616 - μJ Turn-on delay time - 42 - ns Current rise time - 17 - ns Turn-on current slope - 1337 - A/μs - 193 - ns - 32 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 794 - μJ Eoff(2) Turn-off switching losses - 378 - μJ Total switching losses - 1172 - μJ Ets 1. Parameter Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol 4/22 Parameter Test conditions Min. Typ. Max. Unit - 53 - ns - 384 - nC - 14.5 - A - 788 - A/μs trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 104 - μJ trr Reverse recovery time - 104 - ns Qrr Reverse recovery charge - 1352 - nC Irrm Reverse recovery current - 26 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 310 - A/μs Err Reverse recovery energy - 407 - μJ IF = 30 A, VR = 400 V, di/dt=1000 A/μs, VGE = 15 V, (see Figure 28) IF = 30 A, VR = 400 V, di/dt=1000 A/μs, VGE = 15 V, TJ = 175 °C, (see Figure 28) DocID024361 Rev 4 STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature AM17409v1 Ptot (W) Figure 3. Collector current vs. case temperature AM17410v1 IC (A) 60 250 50 200 40 150 30 100 20 50 0 0 10 25 50 0 0 75 100 125 150 175 TC(°C) Figure 4. Output characteristics (TJ=25°C) 25 50 75 100 125 150 175 Figure 5. Output characteristics (TJ=175°C) AM17411v1 IC (A) 120 VGE=15V 100 AM17412v1 IC (A) 120 13V VGE=15V 13V 100 11V 80 80 60 60 9V 40 20 TC(°C) 11V 9V 40 20 7V 0 0 1 2 3 VCE(V) 4 Figure 6. VCE(sat) vs. junction temperature AM17413v1 VCE(sat) (V) 3.2 VGE=15V IC=60A 3.0 1 3 2 4 VCE(V) Figure 7. VCE(sat) vs. collector current VCE(sat) (V) 3.2 3.0 AM17414v1 Tj=175°C VGE=15V 2.8 2.6 2.8 2.6 IC=30A 2.4 2.2 2.0 IC=15A 1.8 1.6 1.4 1.2 -50 0 0 0 50 100 150 TC(°C) Tj=25°C 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 DocID024361 Rev 4 Tj=-40°C 10 20 30 40 50 60 IC(A) 5/22 Electrical characteristics STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area AM17415v1 80 TC=80°C 100 70 60 AM17416v1 IC (A) IC (A) 10μs TC=100°C 10 50 1ms 40 1 30 20 10 100μs 0.1 rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=10Ω, Vge=0/15V, Tj=175 °C) 0 1 f(kHz) 10 Figure 10. Transfer characteristics 0.01 1 AM17418v1 VF(A) Tj=-40°C Tj=-40°C 100 VCE(V) 100 10 Figure 11. Diode VF vs. forward current AM17417v1 IC (A) Single pulse, Tc=25°C Tj