STI360N4F6

STI360N4F6, STP360N4F6 Automotive-grade N-channel 40 V, 1.46 mΩ typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages Datasheet - production data Features Order codes TAB TAB VDS RDS(on) max. ID 40 V 1.8 mΩ 120 A STI360N4F6 STP360N4F6 3 3 12 1 2 • Very low on-resistance TO-220 I²PAK • Designed for automotive applications and AEC-Q101 qualified • Low gate charge • High avalanche ruggedness • Low gate drive power loss Figure 1. Internal schematic diagram Applications • Switching applications '7$% Description These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. * 6 $0Y Table 1. Device summary Order codes Marking Packages STI360N4F6 I²PAK 360N4F6 STP360N4F6 December 2015 This is information on a product in full production. Packing Tube TO-220 DocID023419 Rev 2 1/14 www.st.com Contents STI360N4F6, STP360N4F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 2/14 .............................................. 8 4.1 I²PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 DocID023419 Rev 2 STI360N4F6, STP360N4F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 120 Drain current (continuous) at TC = 100 °C 120 IDM(1) Drain current (pulsed) 480 A PTOT Total dissipation at TC = 25 °C 300 W - 55 to 175 °C Value Unit ID(1)(2) Tstg Tj A Storage temperature Operating junction temperature 1. Current limited by package. 2. Pulse width is limited by safe operating area. Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 0.5 Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W DocID023419 Rev 2 3/14 14 Electrical characteristics 2 STI360N4F6, STP360N4F6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 µA Min. Typ. Max. 40 Unit V VGS = 0 V, VDS = 40 V 1 µA VGS = 0 V, VDS = 40 V, TC=125 °C 100 µA ± 100 nA 4.5 V 1.46 1.8 mΩ Min. Typ. Max. Unit - 17800 - - 1750 - - 1305 - - 304 - - 96 - - 87 - Min. Typ. Max. - 64 - - 182 - - 240 - - 130 - IDSS Zero gate voltage Drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ± 0 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 60 A 3 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 20 V, ID = 120 A, VGS = 10 V (see Figure 14: Gate charge test circuit) pF nC Table 6. Switching times Symbol td(on) tr td(off) tf 4/14 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 20 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: Switching times test circuit for resistive load and Figure 18: Switching time waveform) DocID023419 Rev 2 Unit ns STI360N4F6, STP360N4F6 Electrical characteristics Table 7. Source drain diode Symbol ISD(1) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 120 A (1) Source-drain current (pulsed) - 480 A (2) Forward on voltage ISD = 120 A, VGS = 0 V - 1.3 V trr Reverse recovery time - 44 ns Qrr Reverse recovery charge - 47 nC IRRM Reverse recovery current ISD = 120 A, VDD = 32 V di/dt = 100 A/µs, Tj = 25 °C (see Figure 15: Test circuit for inductive load switching and diode recovery times) - 2.1 A ISDM VSD 1. Current limited by package 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID023419 Rev 2 5/14 14 Electrical characteristics 2.1 STI360N4F6, STP360N4F6 Electrical characteristics (curves) Figure 2. Safe operating area ,' $   Figure 3. Thermal impedance . *,3*'-362$ LV HD DU RQ  LV '6 WK 5 LQ D[ Q WLR P UD E\ SH WHG 2 L OLP  *,3*'-3=7+ —V PV    PV 7F ƒ& 7M ƒ& VLQJOHSXOVH          9'69 Figure 4. Output characteristics ,' $   *,3*'-32&+ 9*6 9  WSV  ,' $ *,3*'-37&+ 9'6 9  9*6 9          9'69 Figure 6. Gate charge vs gate-source voltage    Figure 5. Transfer characteristics       9*6 9  9*6 9       *,3*'-349* 9'' 9 ,' $          9*69 Figure 7. Static drain-source on-resistance 5'6RQ PŸ  *,3*'-35,' 9*6 9          6/14        4JQ&           ,'$ DocID023419 Rev 2 STI360N4F6, STP360N4F6 Electrical characteristics Figure 8. Capacitance variations & S) Figure 9. Normalized gate threshold voltage vs temperature 9*6WK QRUP *,3*'-3&95 &,66  *,3*'-397+ ,' —$     &266 &566   I 0+]       9'69 Figure 10. Normalized on-resistance vs temperature 5'6RQ QRUP *,3*'-3521   9*6 9       7Mƒ& Figure 11. Normalized V(BR)DSS vs temperature 9%5'66 QRUP *,3*'-3%'9 ,' P$                  7Mƒ&       7Mƒ& Figure 12. Source-drain diode forward characteristics 96' 9 *,3*'-36')  7M ƒ&  7M ƒ&    7M ƒ&           ,6'$ DocID023419 Rev 2 7/14 14 Test circuits 3 STI360N4F6, STP360N4F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit 9'' 9 μF VDD VD VGS ,* &2167 9L 9 9*0$; RG Nȍ Q) 3.3 μF 2200 RL Nȍ  —) D.U.T. ȍ '87 Nȍ 9* PW Nȍ Nȍ 3: $0Y AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A Figure 16. Unclamped inductive load test circuit L A D G FAST DIODE D.U.T. S 3.3 μF B B B VD L=100μH 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 9%5'66 WRQ 9' WGRQ WRII WU WGRII   ,'0  9'' $0Y 8/14   ,' 9'' WI 9*6  DocID023419 Rev 2  9'6  $0Y STI360N4F6, STP360N4F6 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 I²PAK package information Figure 19. I²PAK (TO-262) package outline 0004982_Rev_H DocID023419 Rev 2 9/14 14 Package information STI360N4F6, STP360N4F6 Table 8. I²PAK (TO-262) package mechanical data mm. DIM. min. 10/14 typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 DocID023419 Rev 2 STI360N4F6, STP360N4F6 4.2 Package information TO-220 package information Figure 20. TO-220 type A package outline BW\SH$B5HYB7 DocID023419 Rev 2 11/14 14 Package information STI360N4F6, STP360N4F6 Table 9. TO-220 type A package mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/14 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID023419 Rev 2 STI360N4F6, STP360N4F6 5 Revision history Revision history Table 10. Document revision history Date Revision 08-Aug-2012 1 First release. 2 Text and formatting changes throughout document Updated Section 1: Electrical ratings Updated Section 2: Electrical characteristics Added: Section 2.1: Electrical characteristics (curves) Added: Section 3: Test circuits 03-Dec-2015 Changes DocID023419 Rev 2 13/14 14 STI360N4F6, STP360N4F6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 14/14 DocID023419 Rev 2