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STM351-2

STM351-2

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    STM351-2 - RF POWER MODULE WIRELESS LOCAL LOOP APPLICATIONS - STMicroelectronics

  • 数据手册
  • 价格&库存
STM351-2 数据手册
® STM351-2 R F POWER MODULE WIRELESS LOCAL LOOP APPLICATIONS . . . . . . PRELIMINARY DATA LINEAR POWER AMPLIFIER 325-351 MHz 20 VOLTS INPUT/OUTPUT 50 OHMS POU T = 1.0 WAV G (2.0 W PEP) GAIN = 21 dB CASE STYLE H170 DESCRIPTION The STM351-2 module is designed to be used as a linear RF Power Amplifier for WLL or other fixed radio a ccess subscriber applications. This particular model is one of several in design covering the 300-5 00 MHz freque ncy range in individual bandwidths of 25 MHz each. Band splits and corresponding part numbers for all bands are as follows: STM326-2 STM351-2 STM376-2 STM401-2 STM426-2 STM451-2 STM476-2 STM500-2 300-326 MHz 325-351 MHz 350-376 MHz 375-401 400-426 425-451 450-476 475-500 MHz MHz MHz MHz MHz PROTOTYPES AVAILABLE ORDER CODE STM351-2 BRANDING STM351-2 PIN CONNECTION 1. 2. 3. 4. RF Input N/C GND N/C 5. 6. 7. 8. IBB GND VCC (+20VDC) RF output ABSOLUTE MAXIMUM RATINGS (T case = 25° C) Symbol Parameter Valu e Unit V CC I CC (q) I CC P IN POU T T ST G TC DC Supply Voltage Quiescent Current (pin 7) Operating Current (pin 7) RF Input Power RF Output Power Storage Temperature Operating Case Temperature +21 200 500 30 2.0 -30 to +100 − 20 to +60 Vdc mAdc mAdc mW W AVG °C °C June 15, 1998 1/3 S TM351-2 E LECTRICAL SPECIFICATIONS (T case = 30°C, V CC = 20.0Vdc, VBB = 8.8 Vdc) Symb ol Parameter Test Con dition s Value Min. Typ. Max. Unit BW GP η  I CC( q) I CC I BB H IMD — — Frequency Range Power Gain Efficiency Input VSWR Quiescent Current Collector Supply Current Bias Current Harmonics Intermodulation Distortion Load Mismatch Stability POUT = 1.0 W* POUT = 1.0 W* POUT = 1.0 W* PIN = 0 W POUT = 1.0 W* POUT = 1.0 W* POUT = 1.0 W* POUT = 1.0 W* Load VSWR = ∞:1 POUT = 1.0 W* Load VSWR = 5:1 POUT = 1.0 W* (All phase angles) (All phase angles) F = 325 MHz ZS, ZL = 50Ω 325 21 11 — 110 — — — — 23 12.5 — 120 375 65 -34 -46 351 25 — 1.5:1 130 425 — -30 -40 MHz dB % VSWR mA mA mA dBc dBc No Degradation in Output Power after Load Restoration All Spurious outputs more than 50dB below carrier * 2 T one Test, 50 KHz spacing: P OUT = 1.0 WAVG (2. 0 W PEP ) MODULE DC AND TEST FIXTURE CONFIGURATION +8.8VDC +20 VDC 1000 pF 0.1 uF 3.3 uF * Bead 300 pF RF IN 50 Ω Line 300 pF 120 Ω 1 W N/C N/C 50 Ω Line 10 uF RF OUT 1000 pF 12 34 567 8 2/3 ® S TM351-2 P ACKAGE MECHANICAL DATA Ref.: UDCS No. 1021374 rev. A Informati on furni shed i s believed to be accurate and reliable. H owever , STMicroelectroni cs assumes no responsibi lity for the conse quences of use of such i nformation nor for any infri ngement of patents or other rights of thir d parties which may result from its use. No license is granted by implication or otherwise under any patent or patent r ights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. T his publication supersedes and replac es all information previously supplied. STMicr oelectronics products are not authori zed for use as critical components i n li fe suppo rt devi ces or systems without express written approval of STMicroelectronics. The ST l ogo is a registered trademark of STMicroelectronics © 1998 STM icroelectronics - Al l R ights Reserved ST Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea Malaysi a - Malta - Mexico - Morocco - The Netherlands - Si ngapore - S pain - Sweden - Swi tzerl and Taiwan - Thailand - United Ki ngdom - U.S.A. ® 3/3
STM351-2 价格&库存

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