STN817

® STF817 STN817 PNP MEDIUM POWER TRANSISTORS Type STF817 STN817 s Marking 817 N817 s SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES AVAILABLE IN TAPE & REEL PACKING 2 APPLICATIONS s VOLTAGE REGULATION s RELAY DRIVER s GENERIC SWITCH DECRIPTION The STF817 and STN817 are PNP transistors manufactured using Planar Technology resulting in rugged high performance devices. 1 SOT-223 2 3 SOT-89 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Devices Packages V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Base Current Base Peak Current (t p < 5 m s) Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value STN817 SOT-223 -120 -80 -5 -1.5 -2 -0.3 -0.6 1.6 -65 to 150 150 1.4 STF817 SOT-89 V V V A A A A W o C o C Unit April 2002 1/5 STF817 - STN817 THERMAL DATA SOT-223 R thj-amb • T hermal Resistance Junction-ambient 2 SOT-89 89 o Max 78 C/W • Device mounted on a PCB area of 1 cm . ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = - 120 V V CE = - 80 V V EB = -5 V I C = - 10 mA -80 Min. Typ. Max. -500 -1 -100 Unit µA mA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = - 100 mA IC = -1 A I C = - 100 mA IC = -1 A I C = - 100 mA I C = - 500 mA IC = -1 A I C = - 0.1 A I B = -10 mA I B = - 100 mA I B = -10 mA I B = - 100 mA V CE = - 2 V V CE = - 2 V V CE = - 2 V V CE = -10 V 140 80 40 50 -0.25 -0.5 -1 -1.1 V V V V fT Transition Frequency MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/5 STF817 - STN817 SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264 DIM. P008B 3/5 STF817 - STN817 SOT-89 MECHANICAL DATA mm MIN. A B B1 C C1 D D1 E e e1 H L 1.4 0.44 0.36 0.35 0.35 4.4 1.62 2.29 1.42 2.92 3.94 0.89 TYP. MAX. 1.6 0.56 0.48 0.44 0.44 4.6 1.83 2.6 1.57 3.07 4.25 1.2 MIN. 55.1 17.3 14.2 13.8 13.8 173.2 63.8 90.2 55.9 115.0 155.1 35.0 mils TYP. MAX. 63.0 22.0 18.9 17.3 17.3 181.1 72.0 102.4 61.8 120.9 167.3 47.2 DIM. P025H 4/5 STF817 - STN817 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5