STP13N60M2

STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet − production data TAB Features TAB Order codes 3 VDS @ TJmax RDS(on) max ID 650 V 0.38 Ω 11 A 2 1 3 1 2 STP13N60M2 IPAK STU13N60M2 TO-220 STW13N60M2 • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance 3 2 1 • 100% avalanche tested TO-247 • Zener-protected Figure 1. Internal schematic diagram Applications , TAB • Switching applications Description AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package STP13N60M2 STU13N60M2 TO-220 13N60M2 STW13N60M2 February 2014 This is information on a product in full production. Packaging IPAK Tube TO-247 DocID023937 Rev 5 1/18 www.st.com 18 Contents STP13N60M2, STU13N60M2, STW13N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 DocID023937 Rev 5 STP13N60M2, STU13N60M2, STW13N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 11 A ID Drain current (continuous) at TC = 100 °C 7 A IDM (1) Drain current (pulsed) 44 A PTOT Total dissipation at TC = 25 °C 110 W dv/dt(2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V. 3. VDS ≤ 480 V Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max IPAK TO-247 1.14 62.5 100 °C/W 50 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax ) 2.8 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50) 125 mJ DocID023937 Rev 5 3/18 Electrical characteristics 2 STP13N60M2, STU13N60M2, STW13N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 600 V IDSS Zero gate voltage VDS = 600 V drain current (VGS = 0) VDS = 600 V, TC=125 °C 1 100 μA μA IGSS Gate-body leakage current (VDS = 0) ±10 μA 3 4 V 0.35 0.38 Ω Min. Typ. Max. Unit - 580 - pF - 32 - pF - 1.1 - pF VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance 2 VGS = 10 V, ID = 5.5 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 120 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.6 - Ω Qg Total gate charge - 17 - nC - 2.5 - nC - 9 - nC Qgs Gate-source charge Qgd Gate-drain charge VDS = 100 V, f = 1 MHz, VGS = 0 VDD = 480 V, ID = 11 A, VGS = 10 V (see Figure 17) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/18 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16 and 21) Fall time DocID023937 Rev 5 Min. Typ. Max. Unit - 11 - ns - 10 - ns - 41 - ns - 9.5 - ns STP13N60M2, STU13N60M2, STW13N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 11 A ISDM (1) Source-drain current (pulsed) - 44 A VSD (2) Forward on voltage - 1.6 V ISD trr ISD = 11 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 11 A, di/dt = 100 A/μs VDD = 60 V (see Figure 18) ISD = 11 A, di/dt = 100 A/μs VDD = 60 V, Tj=150 °C (see Figure 18) - 297 ns - 2.8 μC - 18.5 A - 394 ns - 3.8 μC - 19 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID023937 Rev 5 5/18 Electrical characteristics 2.1 STP13N60M2, STU13N60M2, STW13N60M2 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 and TO-247 Figure 3. Thermal impedance for TO-220 and TO-247 AM15710v1 ID (A) 10µs n) (o DS Op L i m era ite tion d by in th m is a x ar R e a is 10 1 100 µS 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for IPAK Figure 5. Thermal impedance for IPAK AM15711v1 ID (A) 10µs n) (o DS Op Lim era ite tion d by in th m is a ax R re a is 10 1 100 µS 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM15712v1 ID (A) AM15713v1 ID (A) VGS=7, 8, 9, 10V 20 20 VDS=18V 6V 16 16 12 12 5V 8 4 4 4V 0 0 6/18 8 4 8 12 16 VDS(V) DocID023937 Rev 5 0 0 2 4 6 8 VGS(V) STP13N60M2, STU13N60M2, STW13N60M2 Electrical characteristics Figure 8. Normalized V(BR)DSS vs temperature AM15714v1 V(BR)DSS (norm) ID=1 mA Figure 9. Static drain-source on-resistance AM15715v1 RDS(on) (Ω) VGS=10V 1.1 0.370 1.06 0.360 1.02 0.350 0.98 0.340 0.94 0.330 0.9 -50 0 100 50 TJ(°C) Figure 10. Gate charge vs gate-source voltage AM15716v1 VDS VGS (V) 10 (V) VDD=480V ID=11A VDS 500 0 4 2 6 10 8 ID(A) Figure 11. Capacitance variations AM15717v1 C (pF) 1000 Ciss 400 8 100 300 6 Coss 10 4 200 2 100 0 0 8 4 12 16 0 Qg(nC) Figure 12. Normalized gate threshold voltage vs temperature AM15718v1 VGS(th) (norm) 1 0.1 0.1 Crss 1 10 100 VDS(V) Figure 13. Normalized on-resistance vs temperature AM15719v1 RDS(on) (norm) 1.1 ID=250µA ID=5.5 A VGS=10V 2.1 1.0 1.7 0.9 1.3 0.8 0.9 0.7 0.6 -50 0 50 100 TJ(°C) DocID023937 Rev 5 0.5 -50 0 50 100 TJ(°C) 7/18 Electrical characteristics STP13N60M2, STU13N60M2, STW13N60M2 Figure 14. Source-drain diode forward characteristics AM15720v1 VSD (V) Figure 15. Output capacitance stored energy AM15721v1 Eoss(µJ) TJ=-50°C 1 4 TJ=25°C 0.9 3 0.8 2 0.7 TJ=150°C 1 0.6 0.5 0 8/18 2 4 6 8 10 ISD(A) DocID023937 Rev 5 0 0 100 200 300 400 500 VDS(V) STP13N60M2, STU13N60M2, STW13N60M2 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 19. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 0 DocID023937 Rev 5 10% AM01473v1 9/18 Package mechanical data 4 STP13N60M2, STU13N60M2, STW13N60M2 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/18 DocID023937 Rev 5 STP13N60M2, STU13N60M2, STW13N60M2 Package mechanical data Figure 22. TO-220 type A drawing BW\SH$B5HYB7 DocID023937 Rev 5 11/18 Package mechanical data STP13N60M2, STU13N60M2, STW13N60M2 Table 9. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/18 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID023937 Rev 5 STP13N60M2, STU13N60M2, STW13N60M2 Package mechanical data Figure 23. IPAK (TO-251) drawing 0068771_K DocID023937 Rev 5 13/18 Package mechanical data STP13N60M2, STU13N60M2, STW13N60M2 Table 10. IPAK (TO-251) mechanical data mm. DIM min. typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 14/18 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID023937 Rev 5 1.00 STP13N60M2, STU13N60M2, STW13N60M2 Package mechanical data Figure 24. TO-247 drawing 0075325_G DocID023937 Rev 5 15/18 Package mechanical data STP13N60M2, STU13N60M2, STW13N60M2 Table 11. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 16/18 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID023937 Rev 5 5.70 STP13N60M2, STU13N60M2, STW13N60M2 5 Revision history Revision history Table 12. Document revision history Date Revision Changes 18-Dec-2012 1 First release. 11-Apr-2013 2 – Added: note 3 in Table 2 – Modified: ID value on Table 2, IAR, IAS on Table 4, RDS(on) on Table 5 – Updated: typical values for Table 6, 7 and 8 – Modified: Figure 1 – The part number STD13N60M2 has been moved to a separate datasheet – Added: Section 2.1: Electrical characteristics (curves) 17-Apr-2013 3 – Modified: Rthj-case value on Table 3, trr, qrr values, and trr for TJ = 150 °C on Table 8 – Minor text changes 28-Jun-2013 4 – Document status promoted from preliminary data to production data – Minor text changes 28-Feb-2014 5 – Updated: Figure 22 and Table 9 – Minor text changes DocID023937 Rev 5 17/18 STP13N60M2, STU13N60M2, STW13N60M2 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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