STP15810
N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Features
TAB
Order code
VDS
RDS(on)max
ID
PTOT
STP15810
100 V
0.0042 Ω
110 A
250 W
• 100% avalanche tested
• Ultra low on-resistance
3
1
2
Applications
TO-220
• Switching applications
Description
Figure 1. Internal schematic diagram
'7$%
This N-channel Power MOSFETs utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
*
6
$0Y
Table 1. Device summary
Order code
Marking
Package
Packaging
STP15810
15810
TO-220
Tube
August 2014
This is information on a product in full production.
DocID024972 Rev 4
1/13
www.st.com
Contents
STP15810
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
.............................................. 8
DocID024972 Rev 4
STP15810
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate- source voltage
±20
V
ID
Drain current (continuous) at TC = 25 °C
110
A
ID
Drain current (continuous) at TC = 100 °C
110
A
Drain current (pulsed) TC = 25 °C
440
A
Total dissipation at TC = 25 °C
250
W
EAS
Single pulse avalanche energy
495
mJ
TJ
Operating junction temperature
Tstg
Storage temperature
IDM
(1)
PTOT
(2)
°C
-55 to 175
°C
1. Pulse width is limited by safe operating area
2. Starting Tj=25 °C, ID=30 A, VDD=50 V
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
0.6
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
DocID024972 Rev 4
3/13
13
Electrical characteristics
2
STP15810
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current
IGSS
Gate-body leakage
current
Test conditions
VGS = 0, ID = 250 µA
Min.
Typ.
Max.
100
Unit
V
VGS = 0, VDS = 100 V
1
µA
VGS = 0,
VDS = 100 V, TC=125 °C
100
µA
VDS = 0, VGS = +20 V
100
nA
4.5
V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onVGS = 10 V, ID = 55 A
resistance
2.5
0.0036 0.0042
Ω
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS = 55 V, f = 1 MHz,
VGS = 0
VDD = 55 V, ID = 90 A,
VGS = 10 V
(see Figure 14)
Min.
Typ.
Max.
Unit
-
8115
-
pF
-
1510
-
pF
-
67
-
pF
-
117
-
nC
-
47
-
nC
-
26
-
nC
Min.
Typ.
Max.
Unit
-
33
-
ns
-
57
-
ns
-
72
-
ns
-
33
-
ns
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
4/13
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD = 50 V, ID = 55 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
Fall time
DocID024972 Rev 4
STP15810
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
110
A
ISDM
(1)
Source-drain current (pulsed)
-
440
A
VSD
(2)
Forward on voltage
-
1.2
V
ISD
ISD = 110 A, VGS = 0
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 110 A, di/dt = 100 A/µs
VDD = 80 V, TJ=150 °C
(see Figure 15)
-
70
ns
-
165
nC
-
4.7
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DocID024972 Rev 4
5/13
13
Electrical characteristics
2.1
STP15810
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM18051v1
ID
(A)
AM18052v1
K
δ=0.5
0.2
100
th
in
n
tio by m
ra
pe ited
O m
Li
10
is
ea
a r (on)
S
RD
ax
0.1
0.05
is
100µs
10 -1
0.02
c
0.01
1ms
1
Tj=175°C
Tc=25°C
Single pulse
0.1
0.1
1
VDS(V)
10
Figure 4. Output characteristics
VGS=10V
400
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
10 0 tp(s)
Figure 5. Transfer characteristics
AM18042v1
ID (A)
Single pulse
10ms
8V
AM18043v1
ID
(A)
VDS=4V
300
350
7V
300
250
200
250
200
150
6V
150
100
100
50
50
5V
0
0
4
2
6
8
Figure 6. Gate charge vs gate-source voltage
AM18044v1
VGS
(V)
VDD=50V
ID=110A
12
0
0
VDS(V)
2
4
8
6
VGS(V)
Figure 7. Static drain-source on-resistance
AM18054v1
RDS(on)
(mΩ)
VGS=10V
3.62
10
3.61
8
3.60
6
3.59
3.58
4
3.57
2
3.56
3.55
0
0
6/13
40
80
120
Qg(nC)
DocID024972 Rev 4
0
20
40
60
80
100 ID(A)
STP15810
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
AM18046v1
C
(pF)
AM18047v1
VGS(th)
(norm)
ID=250µA
1.1
Ciss
8000
1
7000
6000
0.9
5000
0.8
4000
0.7
3000
0.6
2000
0.5
1000
Coss
Crss
100 VDS(V)
0
0
20
60
40
80
Figure 10. Normalized on-resistance vs
temperature
AM18048v1
RDS(on)
0.4
-75
-25
25
75
125
TJ(°C)
Figure 11. Normalized VDS vs temperature
AM18049v1
VDS
(norm)
(norm)
ID=55A
2
1.04
1.8
1.03
1.6
1.02
1.4
1.01
1.2
1
1
0.99
0.8
0.98
0.6
0.97
0.4
-75
-25
25
75
125
TJ(°C)
0.96
-75
ID=1mA
-25
25
75
125
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM18055v1
VSD (V)
TJ=-55°C
1
0.9
TJ=25°C
0.8
0.7
TJ=175°C
0.6
0.5
0.4
0.3
0
20
40
60
80
100 ISD(A)
DocID024972 Rev 4
7/13
13
Test circuits
3
STP15810
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 16. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/13
0
DocID024972 Rev 4
10%
AM01473v1
STP15810
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID024972 Rev 4
9/13
13
Package mechanical data
STP15810
Figure 19. TO-220 type A drawing
BW\SH$B5HYB7
10/13
DocID024972 Rev 4
STP15810
Package mechanical data
Table 8. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID024972 Rev 4
11/13
13
Revision history
5
STP15810
Revision history
Table 9. Document revision history
Date
Revision
10-Jul-2013
1
First release.
2
– The part number STH15810-2 has been moved to a separate
datasheet
– Modified: Figure 1
– Modified: ID and IDM values in Table 2
– Modified: Rthj-case value in Table 3
– Modified: RDS(on) values in Table 4
– Modified: VSD, ID and the entire typical values in Table 5, 6 and 7
– Updated: Figure 13, 14, 15 and 16
– Updated: Section 4: Package mechanical data
– Added: Section 2.1: Electrical characteristics (curves)
– Minor text changes
29-Jan-2013
3
– Document status promoted from preliminary data to production
data
– Modified: title
– Modified: RDS(on) typical value in Table 4
– Minor text changes
20-Aug-2014
4
Updated title in cover page.
Added EAS parameter in Table 2: Absolute maximum ratings.
21-Jan-2013
12/13
Changes
DocID024972 Rev 4
STP15810
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2014 STMicroelectronics – All rights reserved
DocID024972 Rev 4
13/13
13
很抱歉,暂时无法提供与“STP15810”相匹配的价格&库存,您可以联系我们找货
免费人工找货