STP16NK60Z

STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38 Ω - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH™ MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z ■ ■ ■ ■ ■ ■ Figure 1: Package ID 14 A 14 A 14 A Pw 190 W 190 W 190 W 3 1 2 VDSS 600 V 600 V 600 V RDS(on) < 0.42 Ω < 0.42 Ω < 0.42 Ω 3 12 TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 I2SPAK 3 2 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES Table 2: Order Codes SALES TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z MARKING P16NK60Z B16NK60Z W16NK60Z PACKAGE TO-220 I2SPAK TO-247 PACKAGING TUBE TUBE TUBE Rev. 1 September 2005 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. 1/10 STP16NK65Z - STB16NK65Z-S - STW16NK60Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C= 100pF, R= 1.5KΩ) ) Pulse width limited by safe operating area (1) ISD ≤ 14 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Value 600 600 ± 30 14 8.8 56 190 1.51 6000 Unit V V V A A A W W/°C V Table 4: Thermal Data TO-220/ I²SPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 62.5 300 0.66 50 TO-247 Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Max Value 14 360 Unit A mJ Table 6: GATE-SOURCE ZENER DIODE Symbol BVGSO Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/10 STP16NK60Z - STB16NK60Z-S - STW16NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) V(BR)DSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Drain-source Breakdown Voltage Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 100 µA VGS = 10V, ID = 7 A ID = 1 mA, VGS = 0 600 3 3.75 0.38 Min. 600 1 50 ±10 4.5 0.42 Typ. Max. Unit V µA µA µA V Ω V Table 8: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (*) td(on) tr td(off) tf Qg Qgs Qgd Test Conditions VDS = 15 V, ID = 7 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 12 2650 285 62 158 30 25 70 15 86 17 46 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC VGS = 0V, VDS = 0V to 480V VDD = 480 V, ID = 14 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 14 A, VGS = 10V (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 9: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM ISD ISDM (2) Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Source-drain Current Source-drain Current (pulsed) ISD = 14 A, VGS = 0 ISD = 14 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) ISD = 14 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 490 5.4 22 585 7 24 14 56 Test Conditions Min. Typ. Max. 14 56 1.6 Unit A A V ns µC A ns µC A A A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/10 STP16NK65Z - STB16NK65Z-S - STW16NK60Z Figure 3: Unclamped Inductive Load Test Circuit Figure 6: Unclamped Inductive Wafeform Figure 4: Switching Times Test Circuit For Resistive Load Figure 7: Gate Charge Test Circuit Figure 5: Test Circuit For Inductive Load Switching and Diode Recovery Times 4/10 STP16NK60Z - STB16NK60Z-S - STW16NK60Z In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/10 STP16NK65Z - STB16NK65Z-S - STW16NK60Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 6/10 STP16NK60Z - STB16NK60Z-S - STW16NK60Z TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 7/10 STP16NK65Z - STB16NK65Z-S - STW16NK60Z I2SPAK MECHANICAL DATA mm. MIN. 4.40 2.49 0.70 1.14 0.45 1.23 8.95 10.00 4.88 16.7 1.27 13.82 TYP MAX. 4.60 2.69 0.93 1.70 0.60 1.36 9.35 10.40 5.28 17.5 1.4 14.42 MIN. 0.173 0.098 0.027 0.045 0.018 0.048 0.352 0.394 0.192 0.657 0.05 0.544 inch TYP. MAX. 0.181 0.106 0.037 0.067 0.024 0.053 0.368 0.409 0.208 0.689 0.055 0.568 DIM. A A1 B B2 C C2 D E G L L2 L3 8/10 STP16NK60Z - STB16NK60Z-S - STW16NK60Z Table 10: Revision History Date 06-Jul-2004 06-Sep-2005 Revision 1 2 Description of Changes First Release. Inserted Ecopak indication 9/10 STP16NK65Z - STB16NK65Z-S - STW16NK60Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10