STP45NE06LFP

® STP45NE06L STP45NE06LFP N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STP45NE06L STP45NE06LFP s s s s s V DSS 60 V 60 V R DS(on) < 0.028 Ω < 0.028 Ω ID 45 A 25 A TYPICAL RDS(on) = 0.022 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC LOW THRESHOLD DRIVE 1 2 3 1 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP45NE06L STP45NE06LFP V DS V DGR V GS ID ID I DM (• ) P tot VISO dv/dt Tstg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 2 0 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 2 5 o C Drain Current (continuous) at T c = 1 00 o C Drain Current (pulsed) Total Dissipation at T c = 2 5 o C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 45 31 180 100 0.67  7 -65 to 175 175 (1) ISD ≤ 45 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit 60 60 ± 20 25 17.5 180 35 0.23 2000 V V V A A A W W/ o C V V/ns o o C C (•) Pulse width limited by safe operating area June 1999 1/6 STP45NE06L/FP THERMAL DATA TO-220 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 1.5 62.5 0.5 300 TO-220FP 4.28 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j m ax) Single Pulse Avalanche Energy (starting T j = 2 5 o C, I D = I AR , V DD = 2 5V) Max Value 45 150 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 2 50 µ A V GS = 0 Min. 60 1 10 ± 1 00 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0 ) V DS = M ax Rating Gate-body Leakage Current (V DS = 0 ) V GS = ± 2 0 V T c = 1 25 o C ON (∗) Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 5 V V GS = 1 0 V Test Conditions I D = 2 50 µ A I D = 22.5 A ID = 2 2.5 A 45 Min. 1 Typ. 1.7 0.024 0.022 Max. 2.5 0.03 0.028 Unit V Ω Ω A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 2 5 V f = 1 MHz I D = 22.5 A V GS = 0 Min. 15 Typ. 30 2370 350 90 3600 480 100 Max. Unit S pF pF pF 2/6 STP45NE06L/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 3 0 V R G = 4.7 Ω V DD = 4 8 V I D = 2 2.5 A V GS = 5 V ID = 45 A V GS = 5 V Min. Typ. 37 100 31 13 13 Max. 50 135 42 Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 4 8 V I D = 4 5 A R G = 4.7 Ω V GS = 1 0 V Min. Typ. 20 45 72 Max. 27 61 100 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 45 A I SD = 4 5 A V DD = 3 0 V V GS = 0 di/dt = 100 A/ µ s T j = 150 o C 90 225 5 Test Conditions Min. Typ. Max. 45 180 1.5 Unit A A V ns nC Α (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STP45NE06L/FP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 F1 D G1 E Dia. L5 L7 L6 L4 P011C L9 4/6 F2 F G H2 STP45NE06L/FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D ¯ H F G1 E F2 123 L2 L4 G 5/6 STP45NE06L/FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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