STP60NE06-16

STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE™" POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS(on) ID STP60NE06-16 60 V < 0.016 Ω 60 A STP60NE06-16FP 60 V < 0.016 Ω 35 A FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.013 Ω ■ 3 EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ LOW GATE CHARGE 100°C ■ HIGH dv/dt CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION 1 APPLICATIONS ■ DC MOTOR CONTROL c u d TO-220 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. ) s ( ct e t le ) s t( 3 2 1 2 TO-220 FP o r P Figure 2. Internal Schematic Diagram o s b O - u d o r P e ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION t e l o s b O Table 2. Order Codes Part Number Marking Package Packaging STP60NE06-16 P60NE06 TO-220 TUBE STP60NE06-16FP P60NE06FP TO-220FP TUBE REV. 2 April 2004 1/11 STP60NE06-16/FP Table 3. Absolute Maximum Ratings Value Symbol Parameter Unit STP60NE06-16 VDS VDGR VGS STP60NE06-16FP Drain-source Voltage (VGS = 0) 60 V Drain- gate Voltage (RGS = 20 kΩ) 60 V ± 20 V Gate-source Voltage ID Drain Current (cont.) at TC = 25 °C 60 35 A ID Drain Current (cont.) at TC = 100 °C 42 24 A Drain Current (pulsed) 240 240 A Total Dissipation at TC = 25 °C 150 40 W Derating Factor 1 0.3 W°/C Insulation Withstand Voltage (DC) – 2000 V IDM (1) Ptot VISO dv/dt (2) Tstg Tj Peak Diode Recovery voltage slope 6 Storage Temperature -65 to 175 Max. Operating Junction Temperature ) s t( V/ns uc 175 °C °C d o r Note: 1. Pulse width limited by safe operating area 2. ISD ≤ 60A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX P e let Table 4. Thermal Data Value Symbol Parameter Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Tl ) s ( ct o s b O Max Max Maximum Lead Temperature For Soldering Purpose Unit TO-220 TO220-FP 1 3.75 °C/W 62.5 °C/W 300 °C Table 5. Avalanche Characteristics Symbol o r P e Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 60 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C; ID = IAR; VDD = 25 V) 350 mJ t e l o s b O 2/11 du STP60NE06-16/FP ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified) Table 6. Off Symbol Parameter V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating Tc = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ± 100 nA IGSS Test Conditions Min. Typ. Max. 60 Unit V Table 7. On (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS; ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V; ID = 30 A Min. Typ. Max. Unit 2 3 4 V 0.013 0.016 c u d Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 8. Dynamic Symbol Parameter Test Conditions gfs (1 Forward Transconductance VDS > ID(on) x RDS(on)max; ID = 30 A Ciss Input Capacitance VDS = 25 V; f = 1 MHz; VGS = 0 Coss Output Capacitance Crss Reverse Transfer Capacitance Symbol td(on) tr t e l o Qgs bs O o r P e Turn-on Time Total Gate Charge 20 35 Max. Unit S 6200 pF 580 800 pF 140 200 pF Typ. Max. Unit VDD = 30 V; ID = 30 A 40 60 ns RG = 4.7 Ω; VGS = 10 V 125 180 ns VDD = 48 V; ID = 60 A; VGS = 10 V 115 160 nC ) s ( ct du Rise Time Qg Qgd Parameter Typ. Ω 4600 Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 9. Switching On e t le o r P Min. ) s t( o s b O - Test Conditions Min. Gate-Source Charge 25 nC Gate-Drain Charge 40 nC Table 10. Switching Off Symbol Parameter Test Conditions Min. Typ. Max. Unit Off-voltage Rise Time VDD = 48 V; ID = 60 A 15 25 ns tf Fall Time RG = 4.7 Ω; VGS = 10 V 150 210 ns tc Cross-over Time 180 260 ns tr(Voff) 3/11 STP60NE06-16/FP Table 11. Source Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 60 A ISDM (1) Source-drain Current (pulsed) 240 A VSD (2) Forward On Voltage ISD = 60 A; VGS = 0 1.5 V trr Reverse Recovery Time ISD = 60 A; di/dt = 100 A/µs 100 ns Qrr Reverse RecoveryCharge VDD = 30 V; Tj = 150 °C 0.4 µC IRRAM Reverse RecoveryCharge 8 A Note: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Figure 3. Safe Operating Area for TO-220 Figure 4. Safe Operating Area for TO-220FP c u d e t le ) s ( ct Figure 5. Thermal Impedance for TO-220 u d o r P e t e l o s b O 4/11 ) s t( o r P o s b O - Figure 6. Thermal Impedance for TO-220FP STP60NE06-16/FP Figure 7. Output Characteristics Figure 8. Transfer Characteristics Figure 9. Transconductance Figure 10. Static Drain-source On Resistance c u d e t le ) s ( ct u d o o r P o s b O - Figure 11. Gate Charge vs Gate-source Voltage r P e ) s t( Figure 12. Capacitance Variations t e l o s b O 5/11 STP60NE06-16/FP Figure 13. Normalized Gate Thresold Voltage vs Temperature Figure 14. Normalized On Resistance vs Temperature c u d Figure 15. Source-drain Diode Forward Characteristics e t le ) s ( ct u d o r P e t e l o s b O 6/11 o s b O - o r P ) s t( STP60NE06-16/FP Figure 16. Unclamped Inductive Load Test Circuit Figure 17. Unclamped Inductive Waveforms Figure 18. Switching Times Test Circuits For Resistive Load Figure 19. Gate Charge Test Circuit c u d e t le ) s ( ct ) s t( o r P o s b O - Figure 20. Test Circuit For Inductive Load Switching And Diode Recovery Times u d o r P e t e l o s b O 7/11 STP60NE06-16/FP PACKAGE MECHANICAL Table 12. TO-220 Mechanical Data millimeters Symbol Min Typ Max Min A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 Typ Max c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 J1 2.40 2.72 0.094 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 28.90 ) s t( 0.256 uc d o r 0.107 0.551 0.154 0.645 P e let 1.137 ØP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 Figure 21. TO-220 Package Dimensions ) s ( ct u d o r P e t e l o s b O Note: Drawing is not to scale. 8/11 inches o s b O - STP60NE06-16/FP Table 13. TO-220FP Mechanical Data Symbol millimeters Typ A B C D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 P V V1 V2 Ø Min 4.40 2.50 1.00 2.50 0.40 0.75 1.15 1.15 4.95 2.40 10.00 Max 4.60 2.70 1.30 2.75 0.70 1.00 1.70 1.70 5.20 2.70 10.40 Min 0.173 0.098 0.039 0.098 0.016 0.030 0.045 0.045 0.195 0.094 0.393 30.60 10.60 3.50 16.40 9.30 1.60 1.126 0.385 0.129 0.626 0.354 100° 46° 3.20 50° 44° 0.118 inches Typ 16.00 Max 0.181 0.106 0.051 0.108 0.027 0.039 0.066 0.066 0.204 0.106 0.409 0.630 28.60 9.80 3.30 15.90 9.00 5° o r P 5° 50° 44° 3.00 e t le o s b O - Figure 22. TO-220FP Package Dimensions H c u d 1.204 0.417 0.137 0.645 0.366 0.063 ) s t( 100° 46° 0.126 A B C ) s ( ct L5 u d o r P e V Ø V L6 V2 L7 L2 P t e l o s b O V L3 V V F2 F1 F L4 V1 F D E G1 G Note: Drawing is not to scale. 9/11 STP60NE06-16/FP REVISION HISTORY Table 14. Revision History Date Revision Description of Changes December-1997 1 First Issue 14-Apr-2004 2 Stylesheet update. No content change. c u d e t le ) s ( ct u d o r P e t e l o s b O 10/11 o s b O - o r P ) s t( STP60NE06-16/FP c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. s b O The ST logo is a registered trademark of STMicroelectronics. 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