STP80N70F6

STP80N70F6 N-channel 68 V, 0.0063 Ω typ., 96 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 package Datasheet − production data Features Order code VDSS max. RDS(on) max. STP80N70F6 68 V < 0.008 Ω (VGS= 10 V) ■ ID ) s t( 96 A 110 W c u d RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge o r P 3 1 2 TO-220 e t le o s b Applications ■ TAB PTOT -O Figure 1. Switching applications ) s ( ct Description Internal schematic diagram $4!" u d o This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. r P e ' t e l o 3 s b O !-V Table 1. Device summary Order code Marking Package Packaging STP80N70F6 80N70F6 TO-220 Tube December 2012 This is information on a product in full production. Doc ID 023433 Rev 1 1/13 www.st.com 13 Contents STP80N70F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits .............................................. 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ) s t( c u d e t le o s b O ) s ( t c u d o r P e t e l o s b O 2/13 Doc ID 023433 Rev 1 o r P STP80N70F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 68 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 96 A ID(1) Drain current (continuous) at TC = 100 °C 60 Drain current (pulsed) 384 Total dissipation at TC = 25 °C 110 ) s ( IDM (1) PTOT (1) Tstg - 55 to 175 1. This value is rated according to Rthj-c Thermal data Symbol Parameter )- Thermal resistance junction-case max Rthj-a Thermal resistance junction-ambient max t(s c u d A W °C t e l o s b O Rthj-c e t e ol r P e Operating junction temperature Table 3. t c u od Storage temperature Tj A Value Unit 1.36 °C/W 62.5 °C/W o r P s b O Doc ID 023433 Rev 1 3/13 Electrical characteristics 2 STP80N70F6 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage (VGS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 48 A Parameter Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge s ( t c P e Qgs Gate-source charge Qgd Gate-drain charge Table 6. Symbol )- ro V 1 µA 100 µA ±100 nA 4 V 0.0063 0.008 Ω Typ. Max. Unit ) s t( VDS = 68 V, TC=125 °C 2 uc od r P e s b O Test conditions du Unit t e l o Dynamic Input capacitance Max. VDS = 68 V Gate-body leakage current (VDS = 0) Ciss Typ. 68 IGSS let 4/13 ID = 250 µA Zero gate voltage Drain current (VGS = 0) Symbol O Min. IDSS Table 5. o s b Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 34 V, ID = 96 A, VGS = 10 V (see Figure 14) Min. 5850 - - 341 pF - pF 240 pF 99 nC 31 - 19 nC nC Switching times Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off-delay time Fall time Test conditions VDD = 10 V, ID = 48 A RG = 4.7 Ω VGS = 10 V (see Figure 13) Doc ID 023433 Rev 1 Min. Typ. Max. Unit - 23 29 - ns ns - 102 23 - ns ns STP80N70F6 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit Source-drain current - 96 A ISDM (1) Source-drain current (pulsed) - 384 A VSD (2) Forward on voltage ISD = 96 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 48 A, VDD = 24 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 15) - ISD trr Qrr IRRM 34 53 3 ns nC A ) s t( 1. Pulse width is limited by safe operating area c u d 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% e t le o r P o s b O ) s ( t c u d o r P e t e l o s b O Doc ID 023433 Rev 1 5/13 Electrical characteristics STP80N70F6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15420v1 ID (A) 280TOEG K is ea ar (on) s i S D th in ax R ion m at by r e d Op ite Lim 100 δ=0.5 0.2 -1 0.1 10 0.05 100µs 10 0.02 1ms Tj=175°C Tc=25°C 1 0.01 -2 Single pulse 10 -6 10 VDS(V) Output characteristics )- 200 s b O s ( t c VGS= 5 V du 100 50 0 0 e t e ol Figure 6. 1 o r P 2 tp (s) AM15422v1 VDS= 4 V 150 100 0 VDS(V) AM15423v1 VDD=34V 12 0 10 200 2 Gate charge vs gate-source voltage Figure 7. VGS (V) -1 10 50 VGS= 4 V 3 -2 10 250 VGS= 6 V 150 10 P e et ID (A) 300 250 ro -3 -4 10 Transfer characteristics ol VGS= 10 V 300 -5 10 Figure 5. AM15427v1 ID (A) O tp τ 10 1 Figure 4. bs c u d Single pulse -3 0.1 0.1 ) s t( Zth=k Rthj-c δ=tp/τ 10 10ms ID=96A 3 4 5 6 7 8 9 10 VGS(V) Static drain-source on-resistance RDS(on) (mΩ) AM15429v1 VGS=10V 14 10 12 8 10 6 8 6 4 4 2 2 0 0 0 6/13 20 40 60 80 100 Qg(nC) Doc ID 023433 Rev 1 0 10 20 30 40 50 60 70 80 ID(A) STP80N70F6 Figure 8. Electrical characteristics Capacitance variations Figure 9. AM15425v1 C (pF) 7000 Normalized BVDSS vs temperature AM15428v1 VDS (norm) 1.1 6000 ID = 1mA 1.05 Ciss 5000 1 4000 0.95 3000 0.9 2000 ) s t( 0.85 1000 0 0 20 40 60 Coss Crss VDS(V) Figure 10. Normalized gate threshold voltage vs temperature AM15426v1 VGS(th) (norm) c u d 0.8 -75 -50 -25 0 25 50 75 100 125150 TJ(°C) l o s 1.2 2 ID=250 µA 0.8 ) s ( ct 0.6 0.4 b O - du 0.2 AM15424v1 VGS=10V 1.5 1 0.5 o r P 0 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) e t e ol e t e RDS(on) (norm) 1 o r P Figure 11. Normalized on-resistance vs temperature 0 -75 -50 -25 0 25 50 75 100 125 150 ID(A) Figure 12. Source-drain diode forward characteristics O bs AM15421v1 VSD (V) TJ=-50°C 1 0.9 0.8 TJ=25°C TJ=150°C 0.7 0.6 0.5 0.4 0 10 20 30 40 50 60 70 80 ISD(A) Doc ID 023433 Rev 1 7/13 Test circuits 3 STP80N70F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD RG 2200 μF D.U.T. 2.7kΩ 47kΩ 1kΩ AM01468v1 e t le D.U.T. VG c u d PW PW ) s t( 100Ω Vi=20V=VGMAX VD o r P AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B o s b A D G S t c u 3.3 μF B 25 Ω D 1000 μF RG S 2200 μF let 3.3 μF VDD ID Vi P e D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform O L VD VDD d o r G o s b (s) L=100μH -O AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 023433 Rev 1 10% AM01473v1 STP80N70F6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. ) s t( c u d e t le o r P o s b O ) s ( t c u d o r P e t e l o s b O Doc ID 023433 Rev 1 9/13 Package mechanical data Table 8. STP80N70F6 TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 ) s t( 1.27 E 10 e 2.40 e1 4.95 F 1.23 H1 6.20 J1 2.40 L 13 L1 3.50 L20 ∅P u d o Q c u d 10.40 ) s ( ct L30 e t le so b O - o r P 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 3.85 2.65 2.95 r P e t e l o s b O 10/13 Max. Doc ID 023433 Rev 1 STP80N70F6 Package mechanical data Figure 19. TO-220 type A drawing ) s t( c u d e t le o r P o s b O ) s ( t c u d o r P e 0015988_typeA_Rev_S t e l o s b O Doc ID 023433 Rev 1 11/13 Revision history 5 STP80N70F6 Revision history Table 9. Document revision history Date Revision 06-Dec-2012 1 Changes First release. ) s t( c u d e t le o s b O ) s ( t c u d o r P e t e l o s b O 12/13 Doc ID 023433 Rev 1 o r P STP80N70F6 ) s t( c u d Please Read Carefully: o r P Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. e t le All ST products are sold pursuant to ST’s terms and conditions of sale. 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