STPS2L60_04

® STPS2L60 POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF(max) FEATURES AND BENEFITS ■ ■ ■ ■ 2A 60 V 150°C 0.55 V SMA (JEDEC DO-214AC) STPS2L60A DO-41 STPS2L60 Negligible switching losses Low forward voltage drop Surface mount miniature package Avalanche capability specified DESCRIPTION Axial and Surface Mount Power Schottky rectifiers suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMA and DO-41, this device is especially intended for use in low voltage, high frequency inverters and small battery chargers. Table 2: Order Codes Part Number STPS2L60A STPS2L60 STPS2L60RL Marking S26 STPS2L60 STPS2L60 Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) IFSM PARM Tstg Tj dV/dt Average forward current SMA DO-41 TL = 115°C δ = 0.5 TL = 110°C δ = 0.5 tp = 10ms sinusoidal tp = 1µs Tj = 25°C Value 60 10 2 75 1600 -65 to + 150 150 10000 Unit V A A A W °C °C V/µs Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage dPt ot 1 * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth ( j – a ) August 2004 REV. 3 1/6 STPS2L60 Table 4: Thermal Resistance Symbol Rth(j-l) Junction to lead Parameter Lead length = 10 mm SMA DO-41 Value 25 30 Unit °C/W Table 5: Static Electrical Characteristics Symbol IR * Tests conditions Tj = 25°C VR = VRRM Reverse leakage current Tj = 100°C Tj = 25°C VF ** Forward voltage drop Tj = 125°C Tj = 25°C Tj = 125°C Pulse test: * tp = 380 µs, δ < 2% Parameter Min. Typ 2 0.51 0.62 Max. 100 10 0.60 0.55 0.77 0.67 Unit µA mA IF = 2 A IF = 4 A V To evaluate the conduction losses use the following equation: P = 0.43 x IF(AV) + 0.06 IF (RMS) 2 Figure 1: Average forward power dissipation versus average forward current PF(AV)(W) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Figure 2: Average forward current versus ambient temperature (δ = 0.5) IF(AV)(A) 2.2 Rth(j-a)=Rth(j-I) δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 2.0 1.8 DO-41 δ=1 1.6 SMA 1.4 1.2 Rth(j-a)=100°C/W 1.0 0.8 T 0.6 0.4 T IF(AV)(A) δ=tp/T tp 0.2 0.0 0 δ=tp/T 25 tp 50 Tamb(°C) 75 100 125 150 Figure 3: Normalized avalanche derating versus pulse duration PARM(tp) PARM(1µs) 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(25°C) 1.2 1 power 0.1 0.8 0.6 0.4 0.2 0.01 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 25 50 75 100 125 150 2/6 STPS2L60 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA) IM(A) 10 9 8 7 6 Ta=25°C Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (DO-41) IM(A) 10 9 8 7 Ta=25°C 6 5 Ta=75°C Ta=75°C 5 4 3 2 1 0 1.E-03 1.E-02 1.E-01 1.E+00 IM t 4 3 Ta=125°C 2 1 0 1.E-03 IM t Ta=125°C δ=0.5 t(s) δ=0.5 t(s) 1.E-02 1.E-01 1.E+00 Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMA) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 δ = 0.2 δ = 0.1 Single pulse δ = 0.5 Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 δ = 0.5 T 0.2 0.1 δ = 0.2 δ = 0.1 T tp(s) δ=tp/T tp Single pulse tp(s) 1.E+01 δ=tp/T 1.E+02 tp 1.E+03 0.0 1.E-01 1.E+00 Figure 9: Reverse leakage current versus reverse voltage applied (typical values) IR(µA) 1.E+05 Tj=150°C Figure 10: Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz VOSC=30mV Tj=25°C 1.E+04 Tj=125°C Tj=100°C 1.E+03 Tj=75°C 100 1.E+02 Tj=50°C 1.E+01 Tj=25°C VR(V) 1.E+00 0 10 20 30 40 50 60 10 1 VR(V) 10 100 3/6 STPS2L60 Figure 11: Forward voltage drop versus forward current (maximum values, low level) Figure 12: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMA) Rth(j-)(°C/W) 130 Tj=125°C (maximum values) IFM(A) 10 9 8 7 6 5 4 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj=125°C (typical values) Tj=25°C (maximum values) 120 110 100 90 80 70 60 50 40 30 20 VFM(V) 10 0 0.0 0.5 1.0 1.5 S(Cu)(cm²) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 13: Thermal resistance versus lead length (DO-41) Rth(°C/W) 120 Rth(j-a) 100 80 60 Rth(j-I) 40 20 Lleads(mm) 0 5 10 15 20 25 4/6 STPS2L60 Figure 14: SMA Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 E c A1 E E1 b C L A2 D L Figure 15: SMA Foot Print Dimensions (in millimeters) 1.65 1.45 2.40 1.45 5/6 STPS2L60 Figure 16: DO-41 Package Mechanical Data C A C / OB OD / OD / REF. A B C D Table 6: Ordering Information Ordering type STPS2L60A STPS2L60 STPS2L60RL ■ ■ DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.07 5.20 0.160 0.205 2.04 2.71 0.080 0.107 28 1.102 0.712 0.863 0.028 0.034 Marking S26 STPS2L60 STPS2L60 Package SMA DO-41 DO-41 Weight 0.068 g 0.34 g 0.34 g Base qty 5000 2000 5000 Delivery mode Tape & reel Ammopack Tape & reel Band indicates cathode Epoxy meets UL94, V0 Table 7: Revision History Date Jul-2003 Aug-2004 Revision 2A 3 Description of Changes Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080). Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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