STPS3045G-TR

® STPS3045G POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE HIGH DISSIPATION MINIATURE PACKAGE DESCRIPTION Single Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in D2PAK surface mount package , this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non Repetitive peak reverse current Storage temperature range Maximum operating junction temperature* Critical rate of rise of reverse voltage Tc = 150°C δ = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz square tp = 100µs square Value 45 50 30 200 1 3 - 65 to + 175 175 10000 Unit V A A A A A °C °C V/µs A A 30 A 45 V 175°C 0.63 V K D2PAK dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj 1/5 October 1999 - Ed: 4A STPS3045G THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter Value 1 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25°C Tj = 125°C VF ** Forward voltage drop Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% Min. Typ. Max. 500 Unit µA mA V VR = VRRM 20 IF = 3 0 A IF = 6 0 A IF = 6 0 A 0.68 0.53 80 0.63 0.84 0.78 To evaluate the conduction losses use the following equation : P = 0.48 x IF(AV) + 0.005 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ =0.5). PF(av)(W) 25 20 15 10 T IF(av)(A) δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 δ=1 35 Rth(j-a)=Rth(j-c) 30 25 20 15 10 5 tp Rth(j-a)=30°C/W T 5 IF(av) (A) 0 0 5 10 15 20 25 δ=tp/T δ=tp/T tp Tamb(°C) 0 25 50 75 100 125 150 175 30 35 40 0 2/5 STPS3045G Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. IM(A) 400 350 300 250 200 150 100 50 0 1E-3 Tc=125°C IM t Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=75°C Tc=100°C 0.6 0.4 0.2 δ = 0.5 δ = 0.2 δ = 0.1 T δ=0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-4 Single pulse tp(s) 1E-3 1E-2 δ=tp/T tp 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values) Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IR(µA) 1E+5 Tj=150°C C(nF) 5.0 F=1MHz Tj=25°C Tj=125°C Tj=100°C 1E+4 1E+3 1E+2 1E+1 1E+0 0 5 10 15 Tj=75°C 1.0 Tj=50°C Tj=25°C VR(V) 20 25 30 35 40 45 VR(V) 0.1 1 2 5 10 20 50 Fig. 7: Forward voltage drop versus forward current (maximum values). Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35µm) Rth(j-a) (°C/W) 80 70 IFM(A) 200 100 Typical values Tj=125°C Tj=25°C 60 50 40 10 Tj=125°C 30 20 10 0 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 S(Cu) (cm²) 0 2 4 6 8 10 12 14 16 18 20 3/5 STPS3045G PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 C2 Millimeters Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0° 8° Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESS THAN 2mm A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 4/5 STPS3045G Type STPS3045G STPS3045G-TR Marking STPS3045G STPS3045G Package D2PAK D PAK 2 Weight 1.48g 1.48g Base qty 50 500 Delivery mode Tube Tape & Reel Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5