STPS3L45AF
Power Schottky rectifier
Datasheet - production data
Description
A
K
Schottky rectifier suited for switched mode power
supplies and high frequency DC to DC
converters. Packaged in a tiny SMAflat package,
this device has been optimized for use in compact
chargers.
Figure 1. Electrical characteristics(a)
SMAflat (non exposed pad)
STPS3L45AF
I
V
"Forward"
I
2 x IO
X
IF
VRRM
VR
VAR
Features
IO
X
V
IR
VTo VF(Io) VF VF(2xIo)
• Negligible switching losses
"Reverse"
• Low thermal resistance
• Low forward voltage drop
IAR
• Avalanche capability specified
Table 1. Device summary
Symbol
value
IF(AV)
3A
VRRM
45 V
Tj (max)
150 °C
VF(typ)
0.462 V
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 11. VAR and IAR are
pulse measurements (tp < 10 µs). VR, IR, VRRM and
VF, are static characteristics
February 2014
This is information on a product in full production.
DocID024949 Rev 2
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Characteristics
1
STPS3L45AF
Characteristics
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Test conditions
Value
Unit
45
V
VRRM
Repetitive peak reverse voltage
IF(AV)
Average forward current
TL = 120 °C δ = 0.5
3
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal
75
A
tp = 10 µs Tj = 125 °C
70
W
PARM(1) Repetitive peak avalanche power
VARM(2)
Maximum repetitive peak
avalanche voltage
tp < 10 µs, Tj < 125 °C, IAR < 1.4 A
50
V
VASM(2)
Maximum single pulse peak
avalanche voltage
tp < 10 µs, Tj < 125 °C, IAR < 1.4 A
50
V
Tstg
Storage temperature range
-65 to + 175
°C
150
°C
Tj
Operating junction temperature
(3)
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.
2. Refer to Figure 11
3.
dPtot
--------------dTj
1
- condition to avoid thermal runaway for a diode on its own heatsink
< ------------------------Rth ( j – a )
Table 3. Thermal resistance
Symbol
Rth(j-l)
Parameter
Thermal resistance junction to lead
Value
Unit
15
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
IR(1)
Reverse leakage current
VF(1)
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 3 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.36 x IF(AV) + 0.05 IF2(RMS)
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Typ.
Max.
Unit
80
300
µA
66
135
mA
0.462
0.57
0.41
0.51
V
STPS3L45AF
Characteristics
Figure 2. Average forward power dissipation
versus average forward current
2.4
PF(AV)(W)
2.0
3.5
d = 0.05
d = 0.1
d = 0.2
IF(AV)(A)
Rth(j-a) = Rth(j-l)
3.0
d=1
d = 0.5
2.5
1.6
2.0
1.2
1.5
0.8
1.0
T
0.4
0.0
Figure 3. Average forward current versus
ambient temperature (δ = 0.5)
IF(AV)(A)
0.0
0.5
1.0
1.5
d=tp/T
2.0
2.5
3.0
tp
3.5
0.0
4.0
Figure 4. Normalized avalanche power derating
versus pulse duration
1
T
0.5
d=tp/T
0
Tamb(°C)
tp
25
50
75
100
125
150
Figure 5. Relative variation of thermal
impedance junction to lead versus pulse
duration
Parm(tp)/Parm(10µs)
1.0
Zth(j-l)/Rth(j-l)
0.9
0.8
0.7
0,1
0.6
0.5
0.4
0,01
0.3
0.2
0,001
tP(µs)
1
10
100
0.0
1000
Figure 6. Reverse leakage current versus
reverse voltage applied (typical values)
1.E+03
Single pulse
0.1
IR(mA)
tp(s)
1.E-04
1.E-03
1.E-02
1.E-01
C(pF)
F = 1MHz
VOSC = 30mVRMS
Tj = 25°C
Tj = 150°C
Tj = 125°C
1.E+01
Tj = 100°C
100
Tj = 75°C
1.E+00
Tj = 50°C
1.E-01
TTjj == 25°C
25°C
1.E-02
1.E-03
1.E+01
Figure 7. Junction capacitance versus reverse
voltage applied (typical values)
1000
1.E+02
1.E+00
VR(V)
0
5
10
15
20
25
30
35
40
45
10
VR(V)
1
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10
100
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8
Characteristics
STPS3L45AF
Figure 8. Forward voltage drop versus forward Figure 9. Forward voltage drop versus forward
current (typical values)
current (maximum values)
I (A)
100.0 F
10.0
100.0
10.0
Tj = 125°C
Tj = 25°C
1.0
0.0
0.2
0.4
0.6
Tj = 25°C
0.8
1.0
1.2
VF(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1.4
Figure 10. Thermal resistance junction to
ambient versus copper surface under each lead
(typical values)
200
Tj = 125°C
1.0
VF(V)
0.1
IF(A)
Figure 11. Reverse safe operating area
(tp < 10 µs and Tj < 125 °C)
Rth(j-a)(°C/W)
1,6
Epoxy printed board FR4, copper thickness Cu = 35 µm
150
Iarm (V)
1,4
1,2
100
1,0
50
0,8
0
0
4/8
0,6
45
SCU(cm²)
1
2
3
4
5
DocID024949 Rev 2
Varm (V)
55
65
75
85
95
STPS3L45AF
2
Package information
Package information
•
Epoxy meets UL94,V0
•
Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 12. SMAflat (non-exposed pad) dimension definitions
L2 2x
L 2x
E
E1
b
L1 2x
A
c
D
Table 5. SMAflat (non-exposed pad) dimension values
Dimensions
Ref.
Millimeters
Min.
Typ.
Inches
Max.
Min.
Typ.
Max.
A
0.90
1.10
0.035
0.043
b
1.25
1.65
0.049
0.065
c
0.15
0.40
0.006
0.016
D
2.25
2.95
0.088
0.116
E
4.80
5.60
0.189
0.220
E1
3.95
4.60
0.155
0.181
L
0.75
1.50
0.029
0.059
L1
0.50
0.020
L2
0.50
0.020
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Package information
STPS3L45AF
Figure 13. SMAflat (non-exposed pad) footprint dimensions in mm (inches)
1.20
(0.047)
3.44
(0.136)
2.07
(0.082)
5.84
(0.230)
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1.20
(0.047)
STPS3L45AF
3
Ordering information
Ordering information
Table 6. Ordering information
4
Order code
Marking
Package
Weight
Base qty
Delivery mode
STPS3L45AF
F3L45
SMAflat (non-exposed pad)
0.035 g
10000
Tape and reel
Revision history
Table 7. Document revision history
Date
Revision
Description of changes
08-Jul-2013
1
First release.
03-Feb-2014
2
Updated Table 5, Figure 12 and Figure 13.
DocID024949 Rev 2
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STPS3L45AF
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