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STPS4030CR

STPS4030CR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    STPS4030CR - LOW DROP POWER SCHOTTKY RECTIFIER - STMicroelectronics

  • 数据手册
  • 价格&库存
STPS4030CR 数据手册
® STPS4030CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) 2 x 20 A 30 V 150°C 0.40 V K A2 K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED s s s s s s A2 A1 A1 K A2 D2PAK STPS4030CG TO-220AB STPS4030CT DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-220AB, D2PAK and I2PAK, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IF(AV) IFSM IRRM PARM Tstg Tj dV/dt *: Average forward current Surge non repetitive forward current Peak repetitive reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage (rated VR, Tj = 25°C) Tc = 130°C δ = 0.5 Per diode Per device K A1 A2 I2PAK STPS4030CR Value 30 32 20 40 220 2 5300 - 65 to + 150 150 10000 Unit V A A A A W °C °C V/µs tp = 10 ms Sinusoidal tp=2 µs square F=1kHz tp = 1µs Tj = 25°C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/6 July 2003 - Ed: 2A STPS4030CT/CG/CR THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VR = VRRM IF = IF = IF = IF = 20 A 20 A 40 A 40 A Min. Typ. 0.50 170 0.44 0.35 0.52 0.46 Max. 1.0 350 0.49 0.40 0.61 0.55 Unit mA V Parameter Junction to case TO-220AB - D PAK - I PAK 2 2 Per diode Total Coupling Value 1.6 0.85 0.1 Unit °C/W °C/W Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.25 x IF(AV) + 0.0075 IF2(RMS) Fig. 1: Conduction losses versus average current. P(W) 12 δ = 0.05 δ = 0.1 δ = 0.2 Fig. 2: Average forward current versus ambient temperature(δ = 0.5). IF(av)(A) 22 δ = 0.5 Rth(j-a)=Rth(j-c) 20 18 δ=1 10 16 14 12 8 6 10 4 T 8 6 4 Rth(j-a)=50°C/W 2 IF(av)(A) 0 0 5 10 15 δ=tp/T 20 2 tp Tamb(°C) 0 25 50 75 100 125 150 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 2/6 STPS4030CT/CG/CR Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 300 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 250 0.8 0.7 0.6 δ = 0.5 200 150 Tc=25°C Tc=75°C 0.5 0.4 0.3 δ = 0.2 δ = 0.1 100 Tc=125°C 50 IM t 0.2 Single pulse T δ=0.5 t(s) 1.E-02 1.E-01 1.E+00 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 0 1.E-03 δ=tp/T tp 1.E+00 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1.E+03 Tj=150°C Tj=125°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(nF) 10.0 F=1MHz Vosc=30mV Tj=25°C 1.E+02 Tj=100°C 1.E+01 Tj=75°C 1.0 1.E+00 Tj=50°C 1.E-01 Tj=25°C VR(V) 1.E-02 0 5 10 15 20 25 30 0.1 1 VR(V) 10 100 Fig. 9: Forward voltage drop versus forward current. IFM(A) 100 Tj=125°C (Maximum values) Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm). Rth(j-a)(°C/W) 80 D²PAK 70 60 Tj=125°C (Typical values) 50 40 Tj=25°C (Maximum values) 10 30 20 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 0 0 5 10 15 S(cm²) 20 25 30 35 40 3/6 STPS4030CT/CG/CR PACKAGE MECHANICAL DATA I²PAK REF. Min. A E L2 c2 DIMENSIONS Millimeters Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 A 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 A1 b b1 b2 c c2 D L1 b2 L b1 b e A1 D e E L c L1 L2 4/6 STPS4030CT/CG/CR PACKAGE MECHANICAL DATA D²PAK REF. Min. A E L2 C2 DIMENSIONS Millimeters Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 8° Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 0° Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 8° A A1 A2 D 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 0° B B2 C L L3 A1 B2 B G A2 C R C2 D E G L L2 M * V2 L3 M R V2 * FLAT ZONE NO LESS THAN 2mm 0.40 typ. 0.016 typ. FOOTPRINT 16.90 10.30 1.30 5.08 3.70 8.90 5/6 STPS4030CT/CG/CR PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. s s s COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.55 M.N MAXIMUM TORQUE VALUE : 0.70 M.N Ordering type STPS4030CT STPS4030CG STPS4030CG-TR STPS4030CR Marking STPS4030CT STPS4030CG STPS4030CG STPS4030CR Package TO-220AB D²PAK D²PAK I²PAK Weight 2.2 g 1.48 g 1.48 g 1.49 g Base qty 50 50 1000 50 Delivery mode Tube Tube Tape & reel Tube s EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6
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