STPSC16H065A
Datasheet
650 V power Schottky silicon carbide rectifier
Features
NC
K
A
A
TO-247
K
•
•
•
•
No or negligible reverse recovery
Temperature independent switching behavior
High forward surge capability
Operating Tj from -40 °C to 175 °C
•
Power efficient product
•
ECOPACK®2 compliant
NC
Applications
•
•
•
DC/DC converter
High frequency inverter
Boost PFC function
Description
The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It
is manufactured using a silicon carbide substrate. The wide band gap material allows
the design of a Schottky diode structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and ringing patterns are negligible. The
minimal capacitive turn-off behavior is independent of temperature.
Product status link
Especially suited for use in PFC applications, this ST SiC diode, packaged in
TO-247, will boost the performance in hard switching conditions. Its high forward
surge capability ensures a good robustness during transient phases.
STPSC16H065A
Product summary
IF(AV)
16 A
VRRM
650 V
Tj (max.)
175 °C
VF (typ.)
1.56 V
Product label
DS12768 - Rev 1 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STPSC16H065A
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
Forward rms current
IF(AV)
Unit
650
V
22
A
Tc = 115 °C(1), DC current
16
A
tp = 10 ms sinusoidal, Tc = 25 °C
120
tp = 10 ms sinusoidal, Tc = 125 °C
105
tp = 10 µs square, Tc = 25 °C
800
Tc = 115 °C(1), Tj = 175 °C, δ = 0.1
66
A
Tj = -40 °C to +175 °C
Average forward current
IFSM
Value
Surge non repetitive forward current
A
IFRM
Repetitive peak forward current
Tstg
Storage temperature range
-55 to +175
°C
Operating junction temperature
-40 to +175
°C
Tj
1. Value based on Rth(j-c) max.
Table 2. Thermal resistance parameters
Rth(j-c)
Value
Parameter
Symbol
Junction to case
Typ.
Max.
0.95
1.5
Unit
°C/W
For more information, please refer to the following application note:
•
AN5088: Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
Test conditions
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 16 A
Min.
Typ.
Max.
-
12
140
-
120
560
-
1.56
1.75
-
1.98
2.50
Unit
µA
V
1. Pulse test: tp = 10 ms, δ < 2%
2. Pulse test: tp = 500 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 1.35 x IF(AV) + 0.07 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses:
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses on a power diode
DS12768 - Rev 1
page 2/9
STPSC16H065A
Characteristics (curves)
Table 4. Dynamic electrical characteristics
Symbol
Parameter
QCj(1)
Total capacitive charge
Cj
1.
1.1
Test conditions
Total capacitance
Typ.
Unit
VR = 400 V
41
nC
VR = 0 V, Tc = 25 °C, F = 1 MHz
750
VR = 300 V, Tc = 25 °C, F = 1 MHz
76
pF
VR
Most accurate value for the capacitive charge: Qcj VR = ∫ C j V dV
0
Characteristics (curves)
Figure 2. Forward voltage drop versus forward
current (typical values, high level)
Figure 1. Forward voltage drop versus forward
current (typical values, low level)
32
IF(A)
28
IF(A)
160
Pulse test: tp = 500 µs
Pulse test: tp = 500 µs
140
T = 25 °C
a
24
120
T = 100 °C
20
a
T = 150 °C
a
100
T = 25 °C
a
T = 175 °C
16
a
80
T = 100 °C
12
a
60
8
T = 150 °C
a
40
4
V (V)
0.5
1.0
1.5
2.0
2.5
3.0
T = 175 °C
20
F
0
0 .0
a
0
0
Figure 3. Reverse leakage current versus reverse
voltage applied (typical values)
1.E+03
V (V)
F
3.5
IR(µA)
1
2
3
4
5
6
7
8
Figure 4. Peak forward current versus case
temperature
80
IM (A)
T
δ = 0.1
Tj = 175 °C
1.E+02
δ= tp/T
60
tp
1.E+01
δ = 0.3
1.E+00
40
Tj = 150 °C
δ = 0.5
1.E-01
1.E-02
20
Tj = 25 °C
1.E-03
δ = 0.7
V (V)
R
1.E-04
0
DS12768 - Rev 1
50 100 150 200 250 300 350 400 450 500 550 600 650
δ=1
0
0
25
50
Tc(°C)
75
100
125
150
175
page 3/9
STPSC16H065A
Characteristics (curves)
Figure 5. Junction capacitance versus reverse
voltage applied (typical values)
800
Cj(pF)
Figure 6. Relative variation of thermal impedance
junction to case versus pulse duration
1.0
0.9
F = 1 MHz
VOSC = 30 mVRMS
0.8
Tj = 25 °C
600
Zth(j-c) /Rth(j-c)
0.7
0.6
0.5
400
0.4
0.3
200
0.2
0
0.1
1.0
10.0
100.0
1000.0
Figure 7. Non-repetitive peak surge forward current
versus pulse duration (sinusoidal waveform)
1.E+03
Single pulse
0.1
VR(V)
0.0
1.E-05
t p (s)
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Figure 8. Total capacitive charges versus reverse
voltage applied (typical values)
IFSM(A)
50
QCj(nC)
40
Ta = 25 °C
30
20
Ta = 125 °C
10
1.E+02
1.E-05
DS12768 - Rev 1
VR(V)
t p (s)
1.E-04
0
1.E-03
1.E-02
0
50
100
150
200
250
300
350
400
page 4/9
STPSC16H065A
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
2.1
TO-247 package information
•
•
•
•
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 N·m
Maximum torque value: 1.0 N·m
Figure 9. TO-247 package outline
Heat-sink plane
A
E
∅P
S
∅R
D
L2
L1
b1
L
b2
1
2
3
b
c
A1
3
2
1
Back view
e
DS12768 - Rev 1
page 5/9
STPSC16H065A
TO-247 package information
Table 5. TO-247 package mechanical data
Dimensions
Ref.
Millimeters
Min.
Typ.
Inches (for reference only)
Max.
Min.
Typ.
Max.
A
4.85
5.15
0.191
0.203
A1
2.20
2.60
0.086
0.102
b
1.00
1.40
0.039
0.055
b1
2.00
2.40
0.078
0.094
b2
3.00
3.40
0.118
0.133
c
0.40
0.80
0.015
0.031
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
0.620
e
5.30
5.60
0.209
L
14.20
14.80
0.559
0.582
L1
3.70
4.30
0.145
0.169
L2
5.45
18.50
0.215
0.220
0.728
ØP
3.55
3.65
0.139
0.143
ØR
4.50
5.50
0.177
0.217
S
5.30
5.70
0.209
DS12768 - Rev 1
5.50
0.216
0.224
page 6/9
STPSC16H065A
Ordering information
3
Ordering information
Table 6. Ordering information
DS12768 - Rev 1
Order code
Marking
Package
Weight
Base qty.
Delivery mode
STPSC16H065AW
STPSC16H065AW
TO-247
4.43 g
30
Tube
page 7/9
STPSC16H065A
Revision history
Table 7. Document revision history
DS12768 - Rev 1
Date
Version
08-Oct-2018
1
Changes
Initial release.
page 8/9
STPSC16H065A
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© 2018 STMicroelectronics – All rights reserved
DS12768 - Rev 1
page 9/9
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