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STPSC16H065AW

STPSC16H065AW

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO247

  • 描述:

    SILICON CARBIDE DIODES

  • 数据手册
  • 价格&库存
STPSC16H065AW 数据手册
STPSC16H065A Datasheet 650 V power Schottky silicon carbide rectifier Features NC K A A TO-247 K • • • • No or negligible reverse recovery Temperature independent switching behavior High forward surge capability Operating Tj from -40 °C to 175 °C • Power efficient product • ECOPACK®2 compliant NC Applications • • • DC/DC converter High frequency inverter Boost PFC function Description The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Product status link Especially suited for use in PFC applications, this ST SiC diode, packaged in TO-247, will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. STPSC16H065A Product summary IF(AV) 16 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.56 V Product label DS12768 - Rev 1 - October 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPSC16H065A Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Unit 650 V 22 A Tc = 115 °C(1), DC current 16 A tp = 10 ms sinusoidal, Tc = 25 °C 120 tp = 10 ms sinusoidal, Tc = 125 °C 105 tp = 10 µs square, Tc = 25 °C 800 Tc = 115 °C(1), Tj = 175 °C, δ = 0.1 66 A Tj = -40 °C to +175 °C Average forward current IFSM Value Surge non repetitive forward current A IFRM Repetitive peak forward current Tstg Storage temperature range -55 to +175 °C Operating junction temperature -40 to +175 °C Tj 1. Value based on Rth(j-c) max. Table 2. Thermal resistance parameters Rth(j-c) Value Parameter Symbol Junction to case Typ. Max. 0.95 1.5 Unit °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 16 A Min. Typ. Max. - 12 140 - 120 560 - 1.56 1.75 - 1.98 2.50 Unit µA V 1. Pulse test: tp = 10 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.35 x IF(AV) + 0.07 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS12768 - Rev 1 page 2/9 STPSC16H065A Characteristics (curves) Table 4. Dynamic electrical characteristics Symbol Parameter QCj(1) Total capacitive charge Cj 1. 1.1 Test conditions Total capacitance Typ. Unit VR = 400 V 41 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 750 VR = 300 V, Tc = 25 °C, F = 1 MHz 76 pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 Characteristics (curves) Figure 2. Forward voltage drop versus forward current (typical values, high level) Figure 1. Forward voltage drop versus forward current (typical values, low level) 32 IF(A) 28 IF(A) 160 Pulse test: tp = 500 µs Pulse test: tp = 500 µs 140 T = 25 °C a 24 120 T = 100 °C 20 a T = 150 °C a 100 T = 25 °C a T = 175 °C 16 a 80 T = 100 °C 12 a 60 8 T = 150 °C a 40 4 V (V) 0.5 1.0 1.5 2.0 2.5 3.0 T = 175 °C 20 F 0 0 .0 a 0 0 Figure 3. Reverse leakage current versus reverse voltage applied (typical values) 1.E+03 V (V) F 3.5 IR(µA) 1 2 3 4 5 6 7 8 Figure 4. Peak forward current versus case temperature 80 IM (A) T δ = 0.1 Tj = 175 °C 1.E+02 δ= tp/T 60 tp 1.E+01 δ = 0.3 1.E+00 40 Tj = 150 °C δ = 0.5 1.E-01 1.E-02 20 Tj = 25 °C 1.E-03 δ = 0.7 V (V) R 1.E-04 0 DS12768 - Rev 1 50 100 150 200 250 300 350 400 450 500 550 600 650 δ=1 0 0 25 50 Tc(°C) 75 100 125 150 175 page 3/9 STPSC16H065A Characteristics (curves) Figure 5. Junction capacitance versus reverse voltage applied (typical values) 800 Cj(pF) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration 1.0 0.9 F = 1 MHz VOSC = 30 mVRMS 0.8 Tj = 25 °C 600 Zth(j-c) /Rth(j-c) 0.7 0.6 0.5 400 0.4 0.3 200 0.2 0 0.1 1.0 10.0 100.0 1000.0 Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.E+03 Single pulse 0.1 VR(V) 0.0 1.E-05 t p (s) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 8. Total capacitive charges versus reverse voltage applied (typical values) IFSM(A) 50 QCj(nC) 40 Ta = 25 °C 30 20 Ta = 125 °C 10 1.E+02 1.E-05 DS12768 - Rev 1 VR(V) t p (s) 1.E-04 0 1.E-03 1.E-02 0 50 100 150 200 250 300 350 400 page 4/9 STPSC16H065A Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 TO-247 package information • • • • Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 N·m Maximum torque value: 1.0 N·m Figure 9. TO-247 package outline Heat-sink plane A E ∅P S ∅R D L2 L1 b1 L b2 1 2 3 b c A1 3 2 1 Back view e DS12768 - Rev 1 page 5/9 STPSC16H065A TO-247 package information Table 5. TO-247 package mechanical data Dimensions Ref. Millimeters Min. Typ. Inches (for reference only) Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 A1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.30 5.60 0.209 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.145 0.169 L2 5.45 18.50 0.215 0.220 0.728 ØP 3.55 3.65 0.139 0.143 ØR 4.50 5.50 0.177 0.217 S 5.30 5.70 0.209 DS12768 - Rev 1 5.50 0.216 0.224 page 6/9 STPSC16H065A Ordering information 3 Ordering information Table 6. Ordering information DS12768 - Rev 1 Order code Marking Package Weight Base qty. Delivery mode STPSC16H065AW STPSC16H065AW TO-247 4.43 g 30 Tube page 7/9 STPSC16H065A Revision history Table 7. Document revision history DS12768 - Rev 1 Date Version 08-Oct-2018 1 Changes Initial release. page 8/9 STPSC16H065A IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS12768 - Rev 1 page 9/9
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