STS3P6F6

STS3P6F6 P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ F6 Power MOSFET in a SO-8 package Datasheet - production data Features 8 5 7 6 Order code VDSS RDS(on)max ID STN3P6F6 60 V 0.16 Ω @ 10 V 3A • RDS(on) * Qg industry benchmark 1 2 3 • Extremely low on-resistance RDS(on) 4 • High avalanche ruggedness SO-8 • Low gate drive power losses Applications • Switching applications Figure 1. Internal schematic diagram Description This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. D (5,6,7,8) G (4) S (1,2,3) Table 1. Device summary Note: Order code Marking Package Packaging STS3P6F6 3K60 SO-8 Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. July 2014 This is information on a product in full production. DocID024437 Rev 2 1/16 www.st.com 16 Contents STS3P6F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ............................................... 8 DocID024437 Rev 2 STS3P6F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at Tpcb = 25 °C 3 A ID Drain current (continuous) at Tpcb = 100 °C 2 A Drain current (pulsed) 12 A PTOT Total dissipation at Tpcb = 25 °C 2.7 W Tj Pstg Operating junction temperature Storage temperature -55 to 150 °C Value Unit 47 °C/W IDM (1) 1. Pulse width is limited by safe operating area. Table 3. Thermal data Symbol Parameter Rthj-pcb(1) Thermal resistance junction-pcb max 1. When mounted on FR-4 board of 15 Note: mm2, 2 Oz Cu, t