STTA12006TV1

® STTA6006P STTA12006TV1/2 TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS SPECIFICTO ”FREEWHEEL MODE”OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE : ISOTOP Electrical insulation : 2500VRMS Capacitance < 45 pF DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and efficient in motor ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tj T stg Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current SOD93 ISOTOP tp=5µs F=5kHz square Surge non repetitive forward current tp=10 ms sinusoidal Maximum operating junction temperature Storage temperature range Value 600 600 80 150 450 500 150 -65 to 150 Unit V V A A A A °C °C control freewheelapplicationsand in booster diode applications in power factor control circuitries. Packaged either in ISOTOP or SOD93 these 600V devices are particularly intended for use on 240V domestic mains. K 60A / 2 x 60A 600V 45ns 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA12006TV1 STTA12006TV2 A K ISOTOPTM SOD93 STTA6006P TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 4C 1/8 STTA12006TV1/2 / STTA6006P THERMAL AND POWER DATA (Per diode) Symbol Rth(j-c) Parameter Junction to case thermal resistance Test conditions Per diode Total Coupling P1 Pmax Conduction power dissipation IF(AV) = 60A δ =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) SOD93 ISOTOP SOD93 ISOTOP Tc= 64°C Tc= 58°C Tc= 54°C Tc= 48°C 120 W Value 0.85 0.47 0.1 108 W Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR * Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% Test conditions IF =60A VR =0.8 x VRRM Ip < 3.IAV Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Tj = 125 °C Min Typ 1.25 5 Max 1.75 1.5 200 12 1.14 6 Unit V V µA mA V mΩ ** Vto rd Test pulses : To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125 °C VR = 400V dIF/dt = -480 A/µs dIF/dt = -500 A/µs Tj = 125 °C VR = 400V dIF/dt = -500 A/µs IF =60A 38 24 IF =60A 0.37 / Min Typ 45 80 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol tfr Parameter Forward recovery time Test conditions Tj = 25°C IF =60 A, dIF/dt = 480 A/µs measured at, 1.1 × VFmax Min Typ Max 700 V 14 Unit ns VFp Peak forward voltage Tj = 25°C IF =60A, dIF/dt = 480 A/µs 2/8 STTA12006TV1/2 / STTA6006P Fig. 1: Conduction losses versus average current. P1(W) 120 100 80 60 40 20 0 0 IF(av)(A) 5 10 15 20 25 30 35 40 45 50 55 60 =0.5 Fig. 2: Forward voltage drop versus forward current. VFM(V) 3.50 T = 0 .1 =0.2 MAXIMUM VALUES 3.00 = tp/T tp =1 2.50 Tj=125 oC 2.00 1.50 1.00 0.50 IFM(A) 0.00 1 10 100 1000 Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. Fig. 4: Peak reverse recovery current versus dIF/dt. IRM(A) 55 o 50 90% CONFIDENCE Tj=125 C 45 VR=400V IF=120A 40 35 30 I F= 60A 25 20 I F= 30A 15 10 5 dIF/dt( A/ s) 0 0 100 200 300 400 500 600 700 800 900 1000 Fig. 5: Reverse recovery time versus dIF/dt. trr(ns) 350 90% CONFIDENCE Tj=125oC 325 VR=400V 300 275 250 225 IF=120A 200 I F=60A 175 150 I F=30A 125 100 75 dIF/dt(A/ s) 50 0 100 200 300 400 500 600 700 800 900 1000 Fig. 6: Softness factor (tb/ta) versus dIF/dt. S factor 0.80 Typical values Tj=125 oC 0.75 IF