STTA812DI

® STTA812D/DI/G TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 8A 1200V 50ns A A K K 2.0V K TO-220AC STTA812D FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY INSULATED PACKAGE : TO-220AC Ins. Electrical insulation : 2500VRMS Capacitance : 7pF. DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mode” operations. ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IF(RMS) IFRM IFSM T stg Tj Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current TO-220AC/ D PAK TO-220AC Ins. tp = 5 µs F = 5kHz square tp = 10ms sinusoidal 2 K TO-220AC Ins. STTA812DI A NC D2PAK STTA812G They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. Value 1200 1200 30 20 110 70 - 65 to + 150 150 Unit V V A A A A °C °C Storage temperature range Maximum operating junction temperature TURBOSWITCH is a trademark of STMicroelectronics. November 1999 - Ed: 4C 1/10 STTA812D/DI/G THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Junction to case thermal resistance Conduction power dissipation IF(AV) = 8A δ =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) TO-220AC/D PAK TO-220AC Ins. TO-220AC/D2PAK Tc= 105 °C TO-220AC Ins. Tc= 85°C TO-220AC/D2PAK Tc= 100 °C TO-220AC Ins. Tc= 79°C 2 Conditions Value 2.3 3.3 19.5 21.5 Unit °C/W W W STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR * Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic parameter * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% Test conditions IF =8A VR =0.8 x VRRM Ip < 3.IAV Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Tj = 125 °C Min Typ 1.35 0.6 Max 2.2 2.0 100 4 1.57 54 Unit V V µA mA V mΩ ** Vto rd Test pulses : To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125 °C VR = 600V dIF/dt = -64 A/µs dIF/dt = -500 A/µs Tj = 125 °C VR = 600V dIF/dt = -500 A/µs IF =8A 12 25 IF =8A 1.2 Min Typ 50 100 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol t fr Parameter Forward recovery time Test conditions Tj = 25°C IF =8 A, dIF/dt = 64 A/µs measured at 1.1 × VFmax Tj = 25°C IF =8A, dIF/dt = 64 A/µs IF =40A, dIF/dt = 500 A/µs Min Typ Max 900 V 35 45 Unit ns VFp Peak forward voltage 2/10 STTA812D/DI/G Fig. 1: Conductionlosses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). IFM(A) δ = 0.1 δ = 0.2 δ = 0.5 P1(W) 20 18 16 14 12 10 8 6 4 2 0 100.0 Tj=125°C δ=1 10.0 1.0 IF(av) (A) 0 2 4 6 8 10 0.1 0.0 1.0 VFM(V) 2.0 3.0 4.0 5.0 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 δ = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 50 40 30 20 IF=0.5*IF(av) VR=600V Tj=125 °C IF=2*IF(av) IF=IF(av) 0.4 0.2 δ = 0.2 δ = 0.1 Single pulse 10 tp(s) 1E-3 1E-2 1E-1 1E+0 0 0 100 dIF/dt(A/µs) 200 300 400 500 0.0 1E-4 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 550 500 450 400 350 300 250 200 150 100 50 0 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). S factor 1.40 VR=600V Tj=125°C IF=2*IF(av) IF=IF(av) VR=600V IF