STW22NM60N

STB22NM60N, STF22NM60N, STP22NM60N Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages Features TAB 3 1 Order code D2 PAK 1 2 3 TO-220FP TAB STF22NM60N 1 2 RDS(on)max. ID 650 V 0.22 Ω 16 A STP22NM60N • • • D(2, TAB) Tjmax. STB22NM60N 3 TO-220 VDS @ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications G(1) • Switching applications S(3) AM01475v1_noZen Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status STB22NM60N STF22NM60N STP22NM60N DS6334 - Rev 5 - May 2018 For further information contact your local STMicroelectronics sales office. www.st.com STB22NM60N, STF22NM60N, STP22NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VGS Value Parameter D2PAK Gate-source voltage Drain current (continuous) at TC = 25 °C ID IDM PTOT dv/dt (3) VISO Tj Tstg TO-220FP ± 30 ID (2) TO-220 Unit V 16 16 (1) A Drain current (continuous) at TC = 100 °C 10 10 (1) A Drain current (pulsed) 64 64 (1) A Total dissipation at TC = 25 °C 125 30 W Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2500 Operating junction temperature range -55 to 150 Storage temperature range V °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 16 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Value Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb(1) Thermal resistance junction-pcb D2PAK TO-220 TO-220FP 1 4.17 62.5 Unit °C/W °C/W 30 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol DS6334 - Rev 5 Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value Unit 6 A 300 mJ page 2/25 STB22NM60N, STF22NM60N, STP22NM60N Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source Breakdown voltage Test condition ID = 1 mA, VGS = 0 V Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C(1) 100 µA ±100 nA 3 4 V 0.20 0.22 Ω Typ. Max. Unit - pF IDSS Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 8 A 2 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Ciss Parameter Min. Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Test condition 1330 VDS = 50 V, f = 1 MHz, VGS = 0 V - 84 4.6 Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 181 - pF Rg Gate input resistance f = 1 MHz open drain - 4.7 - Ω Qg Total gate charge Qgs Gate-source charge - nC Qgd Gate-drain charge VDD = 480 V, ID = 16 A, VGS = 0 to 10 V (see Figure 15. Test circuit for gate charge behavior) 44 - 6 25 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr(v) td(off) tf(i) DS6334 - Rev 5 Parameter Test condition Turn-on delay time VDD = 300 V, ID = 8 A, Voltage rise time RG = 4.7 Ω, VGS = 10 V Turn-off delay time (see Figure 14. Test circuit for resistive load switching times and Figure 19. Switching time waveform) Fall time Min. Typ. Max. Unit - ns 11 18 - 74 38 page 3/25 STB22NM60N, STF22NM60N, STP22NM60N Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test condition Source-drain current Min. Typ. 16 - ISDM (1) Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 16 A, VGS = 0 V trr Reverse recovery time ISD = 16 A, di/dt = 100 V Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 60 V (see Figure 16. Test circuit for inductive load switching and diode recovery times) trr Reverse recovery time ISD = 16 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 60 V (see Figure 16. Test circuit for inductive load switching and diode recovery times) 64 - - - Max. 1.6 Unit A V 296 ns 4 μC 26.8 A 350 ns 4.7 μC 27 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS6334 - Rev 5 page 4/25 STB22NM60N, STF22NM60N, STP22NM60N Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area for TO-220, D²PAK AM06401v1 on ) DS ( Op Li erati mi o ted n in by thi ma s ar x R ea is ID (A) 101 Figure 2. Thermal impedance for TO-220, D²PAK 100 10µs 100µs 1ms Tj=150°C Tc=25°C 10ms Single pulse 10-1 10-1 101 100 102 VDS (V) Figure 3. Safe operating area for TO-220FP ID (A) 101 100 Figure 4. Thermal impedance for TO-220FP AM06403v1 s ai ) re (on s a DS R in ax n m io at d by r pe e O imit L 10µs i th 100µs 1ms 10ms Tj=150°C Tc=25°C 10-1 Single pulse 10-2 10-1 DS6334 - Rev 5 100 101 102 VDS (V) page 5/25 STB22NM60N, STF22NM60N, STP22NM60N Electrical characteristics curves Figure 5. Output characterisics Figure 6. Transfer characteristics AM06404v1 ID (A) 40 VGS =10V 35 ID (A) 40 30 25 25 20 20 15 15 6V 10 10 5 5 5V 5 0 10 15 20 VDS (V) Figure 7. Gate charge vs gate-source voltage AM06406v1 VGS (V) VDD=480V ID=16A VDS 12 VDS (V) 500 10 400 0 2 0 4 8 6 10 VGS (V) Figure 8. Static drain-source on resistance AM06407v1 R DS(on) (Ohm) 0.26 VGS = 10 V 0.24 0.22 8 300 6 0.20 0.18 200 4 100 2 0 VDS =15V 35 7V 30 0 AM06405v1 0 20 10 30 40 50 0 Q g (nC) Figure 9. Capacitance variations Ciss 1000 0.14 0.12 0.10 0 2 4 6 8 10 12 14 16 ID(A) Figure 10. Output capacitance stored energy AM06408v1 C (pF) 0.16 AM06409v1 E oss (µJ) 8 7 6 5 100 Coss 4 3 10 Crss 2 1 1 0.1 DS6334 - Rev 5 1 10 100 VDS (V) 0 0 100 200 300 400 500 VDS (V) page 6/25 STB22NM60N, STF22NM60N, STP22NM60N Electrical characteristics curves Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature (norm) (norm) 2.10 1.10 ID = 250 μA 1.70 1.00 ID = 8 A 1.30 0.90 0.90 0.80 0.70 -50 -25 AM06411v1 R DS(on) AM06410v1 VGS(th) 0 25 50 75 100 125 0.50 -50 -25 TJ (°C) 0 25 50 75 100 125 TJ (°C) Figure 13. Normalized V(BR)DSS vs temperature AM06413v1 V(BR)DSS (norm) 1.07 ID=1mA 1.05 1.03 1.01 0.99 0.97 0.95 0.93 -50 -25 DS6334 - Rev 5 0 25 50 75 100 TJ (°C) page 7/25 STB22NM60N, STF22NM60N, STP22NM60N Test circuits 3 Test circuits Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 17. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform V(BR)DSS ton VD td(on) 90% IDM tf 90% 10% 10% 0 ID VDD toff td(off) tr VDD VGS 0 VDS 90% 10% AM01472v1 AM01473v1 DS6334 - Rev 5 page 8/25 STB22NM60N, STF22NM60N, STP22NM60N Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS6334 - Rev 5 page 9/25 STB22NM60N, STF22NM60N, STP22NM60N D²PAK (TO-263) type A package information 4.1 D²PAK (TO-263) type A package information Figure 20. D²PAK (TO-263) type A package outline 0079457_25 DS6334 - Rev 5 page 10/25 STB22NM60N, STF22NM60N, STP22NM60N D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS6334 - Rev 5 Typ. 0.40 0° 8° page 11/25 STB22NM60N, STF22NM60N, STP22NM60N D²PAK (TO-263) type B package information 4.2 D²PAK (TO-263) type B package information Figure 21. D²PAK (TO-263) type B package outline 0079457_25_B DS6334 - Rev 5 page 12/25 STB22NM60N, STF22NM60N, STP22NM60N D²PAK (TO-263) type B package information Table 9. D²PAK (TO-263) type B mechanical data Dim. mm Min. Max. A 4.36 4.56 A1 0 0.25 b 0.70 0.90 b1 0.51 0.89 b2 1.17 1.37 b3 1.36 1.46 c 0.38 0.694 c1 0.38 0.534 c2 1.19 1.34 D 8.60 9.00 D1 6.90 7.50 E 10.15 10.55 E1 8.10 8.70 e 2.54 BSC H 15.00 15.60 L 1.90 2.50 L1 1.65 L2 1.78 L3 L4 DS6334 - Rev 5 Typ. 0.25 4.78 5.28 page 13/25 STB22NM60N, STF22NM60N, STP22NM60N D²PAK (TO-263) type B package information Figure 22. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS6334 - Rev 5 page 14/25 STB22NM60N, STF22NM60N, STP22NM60N D²PAK packing information 4.3 D²PAK packing information Figure 23. D²PAK tape outline DS6334 - Rev 5 page 15/25 STB22NM60N, STF22NM60N, STP22NM60N D²PAK packing information Figure 24. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. D²PAK tape and reel mechanical data Tape Dim. DS6334 - Rev 5 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 16/25 STB22NM60N, STF22NM60N, STP22NM60N D²PAK type B packing information 4.4 D²PAK type B packing information Figure 25. D²PAK type B tape outline Figure 26. D²PAK type B reel outline T 40mm min. access hole at slot location B D C N A Full radius Tape slot in core for tape start 2.5mm min.width G measured at hub AM06038v1 DS6334 - Rev 5 page 17/25 STB22NM60N, STF22NM60N, STP22NM60N D²PAK type B packing information Table 11. D²PAK type B reel mechanical data Dim. mm Min. A DS6334 - Rev 5 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T Max. 13.2 26.4 30.4 page 18/25 STB22NM60N, STF22NM60N, STP22NM60N TO-220FP package information 4.5 TO-220FP package information Figure 27. TO-220FP package outline 7012510_Rev_12_B DS6334 - Rev 5 page 19/25 STB22NM60N, STF22NM60N, STP22NM60N TO-220FP package information Table 12. TO-220FP package mechanical data Dim. mm Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 DS6334 - Rev 5 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 page 20/25 STB22NM60N, STF22NM60N, STP22NM60N TO-220 type A package information 4.6 TO-220 type A package information Figure 28. TO-220 type A package outline 0015988_typeA_Rev_21 DS6334 - Rev 5 page 21/25 STB22NM60N, STF22NM60N, STP22NM60N TO-220 type A package information Table 13. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS6334 - Rev 5 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 22/25 STB22NM60N, STF22NM60N, STP22NM60N Ordering information 5 Ordering information Table 14. Order codes Order code Marking STB22NM60N STF22NM60N STP22NM60N DS6334 - Rev 5 22NM60N Package Packing D2PAK Tape and reel TO-220FP TO-220 Tube page 23/25 STB22NM60N, STF22NM60N, STP22NM60N Revision history Table 15. Document revision history Date Version Changes 02-Jul-2009 1 First release. 18-Feb-2010 2 Document status promoted from preliminary data to datasheet. 27-Aug-2010 3 New package, mechanical data has been inserted: I²PAK. 05-Nov-2011 4 Some value changed in Table 5: On /off states. The part numbers STI22NM60N and STW22NM60N have been moved to a separate datasheet. Removed maturity status indication from cover page. The document status is production data 02-May-2018 5 Updated title and features in cover page. Updated Section 1 Electrical ratings, Section 2 Electrical characteristics, Section 2.1 Electrical characteristics curves and Section 4 Package information. Minor text changes. DS6334 - Rev 5 page 24/25 STB22NM60N, STF22NM60N, STP22NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS6334 - Rev 5 page 25/25