STB22NM60N, STF22NM60N, STP22NM60N
Datasheet
N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFETs in
D²PAK, TO-220FP and TO-220 packages
Features
TAB
3
1
Order code
D2 PAK
1
2
3
TO-220FP
TAB
STF22NM60N
1
2
RDS(on)max.
ID
650 V
0.22 Ω
16 A
STP22NM60N
•
•
•
D(2, TAB)
Tjmax.
STB22NM60N
3
TO-220
VDS @
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
G(1)
•
Switching applications
S(3)
AM01475v1_noZen
Description
These devices are N-channel Power MOSFETs developed using the second
generation of MDmesh™ technology. This revolutionary Power MOSFET associates
a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high
efficiency converters.
Product status
STB22NM60N
STF22NM60N
STP22NM60N
DS6334 - Rev 5 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STB22NM60N, STF22NM60N, STP22NM60N
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VGS
Value
Parameter
D2PAK
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
IDM
PTOT
dv/dt (3)
VISO
Tj
Tstg
TO-220FP
± 30
ID
(2)
TO-220
Unit
V
16
16 (1)
A
Drain current (continuous) at TC = 100 °C
10
10
(1)
A
Drain current (pulsed)
64
64 (1)
A
Total dissipation at TC = 25 °C
125
30
W
Peak diode recovery voltage slope
15
V/ns
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; TC = 25 °C)
2500
Operating junction temperature range
-55 to 150
Storage temperature range
V
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 16 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 2. Thermal data
Symbol
Value
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Rthj-pcb(1)
Thermal resistance junction-pcb
D2PAK
TO-220
TO-220FP
1
4.17
62.5
Unit
°C/W
°C/W
30
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Table 3. Avalanche characteristics
Symbol
DS6334 - Rev 5
Parameter
IAR
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
Unit
6
A
300
mJ
page 2/25
STB22NM60N, STF22NM60N, STP22NM60N
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Drain-source
Breakdown voltage
Test condition
ID = 1 mA, VGS = 0 V
Min.
Typ.
Max.
600
Unit
V
VGS = 0 V, VDS = 600 V
1
µA
VGS = 0 V, VDS = 600 V,
TC = 125 °C(1)
100
µA
±100
nA
3
4
V
0.20
0.22
Ω
Typ.
Max.
Unit
-
pF
IDSS
Zero gate voltage drain
current
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 8 A
2
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Ciss
Parameter
Min.
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Coss eq. (1)
Test condition
1330
VDS = 50 V, f = 1 MHz,
VGS = 0 V
-
84
4.6
Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V
-
181
-
pF
Rg
Gate input resistance
f = 1 MHz open drain
-
4.7
-
Ω
Qg
Total gate charge
Qgs
Gate-source charge
-
nC
Qgd
Gate-drain charge
VDD = 480 V, ID = 16 A,
VGS = 0 to 10 V (see Figure
15. Test circuit for gate
charge behavior)
44
-
6
25
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol
td(on)
tr(v)
td(off)
tf(i)
DS6334 - Rev 5
Parameter
Test condition
Turn-on delay time
VDD = 300 V, ID = 8 A,
Voltage rise time
RG = 4.7 Ω, VGS = 10 V
Turn-off delay time
(see Figure 14. Test circuit for
resistive load switching times
and Figure 19. Switching time
waveform)
Fall time
Min.
Typ.
Max.
Unit
-
ns
11
18
-
74
38
page 3/25
STB22NM60N, STF22NM60N, STP22NM60N
Electrical characteristics
Table 7. Source drain diode
Symbol
ISD
Parameter
Test condition
Source-drain current
Min.
Typ.
16
-
ISDM (1)
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 16 A, VGS = 0 V
trr
Reverse recovery time
ISD = 16 A, di/dt = 100 V
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
VDD = 60 V (see Figure
16. Test circuit for inductive
load switching and diode
recovery times)
trr
Reverse recovery time
ISD = 16 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
VDD = 60 V (see Figure
16. Test circuit for inductive
load switching and diode
recovery times)
64
-
-
-
Max.
1.6
Unit
A
V
296
ns
4
μC
26.8
A
350
ns
4.7
μC
27
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DS6334 - Rev 5
page 4/25
STB22NM60N, STF22NM60N, STP22NM60N
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 1. Safe operating area for TO-220, D²PAK
AM06401v1
on
)
DS
(
Op
Li erati
mi
o
ted n in
by thi
ma s ar
x R ea
is
ID
(A)
101
Figure 2. Thermal impedance for TO-220, D²PAK
100
10µs
100µs
1ms
Tj=150°C
Tc=25°C
10ms
Single
pulse
10-1
10-1
101
100
102
VDS (V)
Figure 3. Safe operating area for TO-220FP
ID
(A)
101
100
Figure 4. Thermal impedance for TO-220FP
AM06403v1
s
ai )
re (on
s a DS
R
in ax
n
m
io
at d by
r
pe e
O imit
L
10µs
i
th
100µs
1ms
10ms
Tj=150°C
Tc=25°C
10-1
Single
pulse
10-2
10-1
DS6334 - Rev 5
100
101
102
VDS (V)
page 5/25
STB22NM60N, STF22NM60N, STP22NM60N
Electrical characteristics curves
Figure 5. Output characterisics
Figure 6. Transfer characteristics
AM06404v1
ID
(A)
40
VGS =10V
35
ID
(A)
40
30
25
25
20
20
15
15
6V
10
10
5
5
5V
5
0
10
15
20 VDS (V)
Figure 7. Gate charge vs gate-source voltage
AM06406v1
VGS
(V)
VDD=480V
ID=16A
VDS
12
VDS
(V)
500
10
400
0
2
0
4
8
6
10 VGS (V)
Figure 8. Static drain-source on resistance
AM06407v1
R DS(on)
(Ohm)
0.26
VGS = 10 V
0.24
0.22
8
300
6
0.20
0.18
200
4
100
2
0
VDS =15V
35
7V
30
0
AM06405v1
0
20
10
30
40
50
0
Q g (nC)
Figure 9. Capacitance variations
Ciss
1000
0.14
0.12
0.10
0
2
4
6
8
10
12
14
16 ID(A)
Figure 10. Output capacitance stored energy
AM06408v1
C
(pF)
0.16
AM06409v1
E oss
(µJ)
8
7
6
5
100
Coss
4
3
10
Crss
2
1
1
0.1
DS6334 - Rev 5
1
10
100
VDS (V)
0
0
100
200
300
400
500
VDS (V)
page 6/25
STB22NM60N, STF22NM60N, STP22NM60N
Electrical characteristics curves
Figure 11. Normalized gate threshold voltage vs
temperature
Figure 12. Normalized on resistance vs temperature
(norm)
(norm)
2.10
1.10
ID = 250 μA
1.70
1.00
ID = 8 A
1.30
0.90
0.90
0.80
0.70
-50 -25
AM06411v1
R DS(on)
AM06410v1
VGS(th)
0
25
50
75 100 125
0.50
-50 -25
TJ (°C)
0
25
50
75 100 125
TJ (°C)
Figure 13. Normalized V(BR)DSS vs temperature
AM06413v1
V(BR)DSS
(norm)
1.07
ID=1mA
1.05
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25
DS6334 - Rev 5
0
25
50
75 100
TJ (°C)
page 7/25
STB22NM60N, STF22NM60N, STP22NM60N
Test circuits
3
Test circuits
Figure 14. Test circuit for resistive load switching times
Figure 15. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 16. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
B
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 17. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
V(BR)DSS
ton
VD
td(on)
90%
IDM
tf
90%
10%
10%
0
ID
VDD
toff
td(off)
tr
VDD
VGS
0
VDS
90%
10%
AM01472v1
AM01473v1
DS6334 - Rev 5
page 8/25
STB22NM60N, STF22NM60N, STP22NM60N
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS6334 - Rev 5
page 9/25
STB22NM60N, STF22NM60N, STP22NM60N
D²PAK (TO-263) type A package information
4.1
D²PAK (TO-263) type A package information
Figure 20. D²PAK (TO-263) type A package outline
0079457_25
DS6334 - Rev 5
page 10/25
STB22NM60N, STF22NM60N, STP22NM60N
D²PAK (TO-263) type A package information
Table 8. D²PAK (TO-263) type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.30
8.50
8.70
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
DS6334 - Rev 5
Typ.
0.40
0°
8°
page 11/25
STB22NM60N, STF22NM60N, STP22NM60N
D²PAK (TO-263) type B package information
4.2
D²PAK (TO-263) type B package information
Figure 21. D²PAK (TO-263) type B package outline
0079457_25_B
DS6334 - Rev 5
page 12/25
STB22NM60N, STF22NM60N, STP22NM60N
D²PAK (TO-263) type B package information
Table 9. D²PAK (TO-263) type B mechanical data
Dim.
mm
Min.
Max.
A
4.36
4.56
A1
0
0.25
b
0.70
0.90
b1
0.51
0.89
b2
1.17
1.37
b3
1.36
1.46
c
0.38
0.694
c1
0.38
0.534
c2
1.19
1.34
D
8.60
9.00
D1
6.90
7.50
E
10.15
10.55
E1
8.10
8.70
e
2.54 BSC
H
15.00
15.60
L
1.90
2.50
L1
1.65
L2
1.78
L3
L4
DS6334 - Rev 5
Typ.
0.25
4.78
5.28
page 13/25
STB22NM60N, STF22NM60N, STP22NM60N
D²PAK (TO-263) type B package information
Figure 22. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
DS6334 - Rev 5
page 14/25
STB22NM60N, STF22NM60N, STP22NM60N
D²PAK packing information
4.3
D²PAK packing information
Figure 23. D²PAK tape outline
DS6334 - Rev 5
page 15/25
STB22NM60N, STF22NM60N, STP22NM60N
D²PAK packing information
Figure 24. D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 10. D²PAK tape and reel mechanical data
Tape
Dim.
DS6334 - Rev 5
Reel
mm
mm
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
Max.
330
13.2
26.4
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
page 16/25
STB22NM60N, STF22NM60N, STP22NM60N
D²PAK type B packing information
4.4
D²PAK type B packing information
Figure 25. D²PAK type B tape outline
Figure 26. D²PAK type B reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start
2.5mm min.width
G measured
at hub
AM06038v1
DS6334 - Rev 5
page 17/25
STB22NM60N, STF22NM60N, STP22NM60N
D²PAK type B packing information
Table 11. D²PAK type B reel mechanical data
Dim.
mm
Min.
A
DS6334 - Rev 5
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
Max.
13.2
26.4
30.4
page 18/25
STB22NM60N, STF22NM60N, STP22NM60N
TO-220FP package information
4.5
TO-220FP package information
Figure 27. TO-220FP package outline
7012510_Rev_12_B
DS6334 - Rev 5
page 19/25
STB22NM60N, STF22NM60N, STP22NM60N
TO-220FP package information
Table 12. TO-220FP package mechanical data
Dim.
mm
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
DS6334 - Rev 5
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
page 20/25
STB22NM60N, STF22NM60N, STP22NM60N
TO-220 type A package information
4.6
TO-220 type A package information
Figure 28. TO-220 type A package outline
0015988_typeA_Rev_21
DS6334 - Rev 5
page 21/25
STB22NM60N, STF22NM60N, STP22NM60N
TO-220 type A package information
Table 13. TO-220 type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
DS6334 - Rev 5
Typ.
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
page 22/25
STB22NM60N, STF22NM60N, STP22NM60N
Ordering information
5
Ordering information
Table 14. Order codes
Order code
Marking
STB22NM60N
STF22NM60N
STP22NM60N
DS6334 - Rev 5
22NM60N
Package
Packing
D2PAK
Tape and reel
TO-220FP
TO-220
Tube
page 23/25
STB22NM60N, STF22NM60N, STP22NM60N
Revision history
Table 15. Document revision history
Date
Version
Changes
02-Jul-2009
1
First release.
18-Feb-2010
2
Document status promoted from preliminary data to datasheet.
27-Aug-2010
3
New package, mechanical data has been inserted: I²PAK.
05-Nov-2011
4
Some value changed in Table 5: On /off states.
The part numbers STI22NM60N and STW22NM60N have been moved to a
separate datasheet.
Removed maturity status indication from cover page. The document status is
production data
02-May-2018
5
Updated title and features in cover page.
Updated Section 1 Electrical ratings, Section 2 Electrical characteristics,
Section 2.1 Electrical characteristics curves and Section 4 Package
information.
Minor text changes.
DS6334 - Rev 5
page 24/25
STB22NM60N, STF22NM60N, STP22NM60N
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© 2018 STMicroelectronics – All rights reserved
DS6334 - Rev 5
page 25/25