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STWA48N60DM2

STWA48N60DM2

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-247-3

  • 描述:

    MOSFET N-CH 600V 40A TO247

  • 数据手册
  • 价格&库存
STWA48N60DM2 数据手册
STWA48N60DM2 N-channel 600 V, 0.065 Ω typ., 40 A MDmesh™ DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features       Figure 1: Internal schematic diagram D(2) Order code VDS RDS(on) max. ID STWA48N60DM2 600 V 0.079 Ω 40 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. G(1) S(3) AM15572v1_no_tab Table 1: Device summary Order code Marking Package Packing STWA48N60DM2 48N60DM2 TO-247 long leads Tube December 2016 DocID030156 Rev 1 This is information on a product in full production. 1/12 www.st.com Contents STWA48N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/12 TO-247 long leads package information ........................................... 9 Revision history ............................................................................ 11 DocID030156 Rev 1 STWA48N60DM2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 40 Drain current (continuous) at Tcase = 100 °C 25 IDM(1) Drain current (pulsed) 160 A PTOT Total dissipation at Tcase = 25 °C 300 W 50 V/ns -55 to 150 °C Value Unit VGS ID Parameter dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range A Notes: (1) Pulse width is limited by safe operating area (2) ISD ≤ 40 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V (3) VDS ≤ 480 V Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient 0.42 50 °C/W Table 4: Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax) EAR Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) DocID030156 Rev 1 Value Unit 7 A 950 mJ 3/12 Electrical characteristics 2 STWA48N60DM2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 VGS = 0 V, VDS = 600 V, Tcase = 125 °C(1) 100 Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 20 A 0.065 0.079 Ω Min. Typ. Max. Unit - 3250 - - 142 - - 4.5 - 258 - pF Ω IDSS Zero gate voltage drain current IGSS 3 µA Notes: (1)Defined by design, not subject to production test Table 6: Dynamic Symbol Ciss Parameter Test conditions Input capacitance VDS = 100 V, f = 1 MHz, ID = 0 A Coss Output capacitance Crss Reverse transfer capacitance Coss Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - RG Intrinsic gate resistance f = 1 MHz, ID= 0 A - 4 - Qg Total gate charge - 70 - Qgs Gate-source charge - 18 - Qgd Gate-drain charge VDD = 480 V, ID = 40 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") - 28 - eq. (1) Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/12 DocID030156 Rev 1 pF nC STWA48N60DM2 Electrical characteristics Table 7: Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD = 300 V, ID = 20 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") Rise time Turn-off delay time Fall time Min. Typ. Max. Unit - 27 - - 27 - - 131 - - 9.8 - Min. Typ. Max. Unit ns Table 8: Source-drain diode Symbol Parameter Test conditions ISD(1) Source-drain current - 40 A ISDM(2) Source-drain current (pulsed) - 160 A VSD(3) Forward on voltage VGS = 0 V, ISD = 40 A - 1.6 V ISD = 40 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 140 ns - 0.7 µC - 10 A ISD = 40 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 256 ns - 2.5 µC - 20 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1)Limited by maximum junction temperature (2) Pulse width is limited by safe operating area. (3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. V(BR)GSO Gate-source breakdown voltage IGS = ±250 μA, ID = 0 A ±30 - - Unit V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for additional external componentry. DocID030156 Rev 1 5/12 Electrical characteristics 2.1 6/12 STWA48N60DM2 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID030156 Rev 1 STWA48N60DM2 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source- drain diode forward characteristics DocID030156 Rev 1 7/12 Test circuits 3 8/12 STWA48N60DM2 Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID030156 Rev 1 STWA48N60DM2 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-247 long leads package information Figure 19: TO-247 long leads package outline DocID030156 Rev 1 9/12 Package information STWA48N60DM2 Table 10: TO-247 long leads package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 P 3.50 3.60 Q 5.60 S 6.05 L1 10/12 4.30 DocID030156 Rev 1 3.70 6.00 6.15 6.25 STWA48N60DM2 5 Revision history Revision history Table 11: Document revision history Date Revision 20-Dec-2016 1 Changes First release DocID030156 Rev 1 11/12 STWA48N60DM2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 12/12 DocID030156 Rev 1
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